id	author	title	date	pages	extension	mime	words	sentences	flesch	summary	cache	txt
cord-027376-c2n9w7un	Sokolov, Andrii	Simulation Methodology for Electron Transfer in CMOS Quantum Dots	2020-05-25		.txt	text/plain	4425	234	55	We compare numerical and semi-analytical techniques concluding this paper by examining two case studies: the electron transfer through multiple quantum dots and the construction of a Hadamard gate simulated using a numerical method to solve the time-dependent Schrödinger equation and the tight-binding formalism for a time-dependent Hamiltonian. We compare numerical and semi-analytical techniques concluding this paper by examining two case studies: electron transfer through multiple quantum dots and construction of a Hadamard gate simulated using the time-dependent Schrödinger equation and the tight-binding formalism. In order to have a useful simulator of the studied quantum structure, one needs to define a possible "localised" state of an electron injected in the structure, simulate its evolution with time at a given potential energy along the structure and calculate the probability of the electron to be measured at the edges of the structure by a detector device.	./cache/cord-027376-c2n9w7un.txt	./txt/cord-027376-c2n9w7un.txt