id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
1n79h418n2r	Hansheng Ye	III-Nitride Based High Electron Mobility Transistors for RF Applications	2022		.txt	text/plain	264	12	42	III-nitride based high electron mobility transistors are ideal candidates for such systems due to their wide/ultra-wide bandgaps, high carrier concentrations, as well as high carrier velocities. Rapid development of wireless communication systems, including the deployment of 5G networks, calls for robust electronic components that can efficiently support the transmission of increasingly high data rates with wider bandwidths and at higher frequencies.	cache/1n79h418n2r.txt	txt/1n79h418n2r.txt