id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
5x21td98j21	Wangqing Yuan	Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications	2009		.txt	text/plain	152	6	45	The optical constants of InAlP-ox, In0.49Ga0.51P (InGaP), and InAlP have been determined by VASE measurements using a photon energy range of 1.45 to 5.45 eV at room temperature. The optical constants of InAlP and InAlP-ox are used to characterize a thick partially-oxidized InAlP epitaxial film grown on GaAs structure.	cache/5x21td98j21.txt	txt/5x21td98j21.txt