id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
6d56zw14x3b	Ying Cao	Investigation of InAlP Native Oxides for GaAs Metal-Oxide-Semiconductor Device Applications	2006		.txt	text/plain	154	5	34	GaAs-based metaloxide- semiconductor field-effect transistor (MOSFET) devices with InAlP wet oxides as the gate insulator have been fabricated and characterized on two heterostructures. The kinetics of wet thermal oxidation of InAlP epitaxial layers lattice-matched to GaAs and the electrical properties of the resulting InAlP wet thermal oxides when scaled to reduced thicknesses have been investigated.	cache/6d56zw14x3b.txt	txt/6d56zw14x3b.txt