id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
7h149p3108c	Jing Zhang	Fabrication and Performance of Submicron Gate Length GaAs-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric	2007		.txt	text/plain	313	13	43	The microstructural properties of InAlP oxide have been examined, and the mechanisms governing the oxidation of InAlP have been explored. GaAs-channel MOSFETs using InAlP oxide as the gate dielectric have been fabricated and characterized.	cache/7h149p3108c.txt	txt/7h149p3108c.txt