id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
7w62f764365	Yan Yan	Silicon-Based Tunnel Diode Technology	2008		.txt	text/plain	251	14	51	Tunnel diodes were formed by rapid thermal annealing from an Al:B:Si source on Si with a peak current density of 2.7 Ì_å_A/Ì_å_m2. Rapid thermal diffusion from spin-on diffusants is the particular focus of this work as a basis for establishing a rapid thermal processing method compatible with commercial foundry processes.	cache/7w62f764365.txt	txt/7w62f764365.txt