id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
bz60cv45s9j	Golnaz Karbasian	Fabrication of Metallic Single Electron Transistors Featuring Plasma Enhanced Atomic Layer Deposition of Tunnel Barriers	1904		.txt	text/plain	813	25	38	While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam lithography and lift-off, while atomic layer deposition provides precise control over the thickness of the tunnel barrier and significantly increases the choices for barrier materials.	cache/bz60cv45s9j.txt	txt/bz60cv45s9j.txt