id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
cc08hd78w50	Satyaki Ganguly	Electrical Characterization of ALD Al2O3/AlN/GaN HEMTs and Integration with Microano Magnets for Novel Device Application	2011		.txt	text/plain	400	13	39	In recent years High Electron Mobility Transistors (HEMTs) based on III-Nitride semiconductors have proved capable of high power, high voltage and high frequency operation. The successful integration of microano magnets (supermalloy made) with III-Nitride heterostructure and the ability of imaging the single/multi-domain featured nano/micromagnets on III-Nitrides presented in this work opens the possibility of active device driven switching of nanomagnets in MQCA logic operation.	cache/cc08hd78w50.txt	txt/cc08hd78w50.txt