id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
kd17cr58w4s	Wenjie Chen	Deep Level Defects in Indium Phosphide PIN Diodes	2011		.txt	text/plain	271	9	50	The activation energy of the observed traps were found to be 0.20 eV, 0.25 eV, 0.31 eV, and 0.54 eV. Although the types of these deep centers (i.e., electron or hole trap) cannot be unambiguously determined using this method, the trap at 0.31 eV is most likely the same 0.3 eV electron trap found in DLTS, since they represent the similar time constants in the same temperature range; likewise, the deep center with activation energy of 0.54 eV has also been observed as an electron trap before, and is believed due to antisite defects such as indium vacancies or phosphorus interstitials. The other two centers at 0.20 eV and 0.25 eV have also been previously reported as electron traps, but the origins are as yet unclear.	cache/kd17cr58w4s.txt	txt/kd17cr58w4s.txt