id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
m613mw2551s	Weng-Lee Lim	Investigation of Magnetotransport Properties in III-Mn-V Ferromagnetic Semiconductors	2006		.txt	text/plain	372	10	30	III-Mn-V ferromagnetic semiconductors' GaMnAs, InMnAs, InMnSb, and GaMnSb' are studied experimentally using electrical transport techniques, with emphasis on resistivity, anomalous Hall effect (AHE), anisotropic magnetoresistance (AMR), and planar Hall effect (PHE). This asymmetry allows one to obtain four distinct zero-field resistance states in vicinal GaMnAs films that depend on the history of the experiment, making it of potential interest for building a unique four-state memory device.	cache/m613mw2551s.txt	txt/m613mw2551s.txt