id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
pz50gt56z5s	Dana Charles Wheeler	High-k-InAs metal-oxide-semiconductor capacitors formed by atomic-layer deposition	2009		.txt	text/plain	208	8	40	TEM and XPS data suggest the high trap densities in the HfO(2)-InAs capacitors are associated with an interfacial layer likely composed of native indium oxides. XPS measurements indicate that these oxides are not present after the Al(2)O(3) ALD process, eliminating a source of Fermi-level pinning and reducing the number of interface traps.	cache/pz50gt56z5s.txt	txt/pz50gt56z5s.txt