id	sid	tid	token	lemma	pos
0v838052b06	1	1	gan	gan	PROPN
0v838052b06	1	2	based	base	VERB
0v838052b06	1	3	devices	device	NOUN
0v838052b06	1	4	are	be	AUX
0v838052b06	1	5	ideal	ideal	ADJ
0v838052b06	1	6	for	for	ADP
0v838052b06	1	7	high	high	ADJ
0v838052b06	1	8	frequency	frequency	NOUN
0v838052b06	1	9	and	and	CCONJ
0v838052b06	1	10	high	high	ADJ
0v838052b06	1	11	power	power	NOUN
0v838052b06	1	12	applications	application	NOUN
0v838052b06	1	13	due	due	ADJ
0v838052b06	1	14	to	to	ADP
0v838052b06	1	15	gan	gan	PROPN
0v838052b06	1	16	's	's	PART
0v838052b06	1	17	wide	wide	ADJ
0v838052b06	1	18	bandgap	bandgap	NOUN
0v838052b06	1	19	and	and	CCONJ
0v838052b06	1	20	high	high	ADJ
0v838052b06	1	21	electron	electron	NOUN
0v838052b06	1	22	saturation	saturation	NOUN
0v838052b06	1	23	velocity	velocity	NOUN
0v838052b06	1	24	,	,	PUNCT
0v838052b06	1	25	and	and	CCONJ
0v838052b06	1	26	the	the	DET
0v838052b06	1	27	ability	ability	NOUN
0v838052b06	1	28	to	to	PART
0v838052b06	1	29	take	take	VERB
0v838052b06	1	30	advantage	advantage	NOUN
0v838052b06	1	31	of	of	ADP
0v838052b06	1	32	polarization	polarization	NOUN
0v838052b06	1	33	in	in	ADP
0v838052b06	1	34	heterostructures	heterostructure	NOUN
0v838052b06	1	35	.	.	PUNCT
0v838052b06	2	1	to	to	PART
0v838052b06	2	2	further	far	ADV
0v838052b06	2	3	enhance	enhance	VERB
0v838052b06	2	4	the	the	DET
0v838052b06	2	5	capabilities	capability	NOUN
0v838052b06	2	6	of	of	ADP
0v838052b06	2	7	gan	gan	PROPN
0v838052b06	2	8	-	-	PUNCT
0v838052b06	2	9	based	base	VERB
0v838052b06	2	10	electronics	electronic	NOUN
0v838052b06	2	11	,	,	PUNCT
0v838052b06	2	12	work	work	VERB
0v838052b06	2	13	in	in	ADP
0v838052b06	2	14	two	two	NUM
0v838052b06	2	15	main	main	ADJ
0v838052b06	2	16	directions	direction	NOUN
0v838052b06	2	17	has	have	AUX
0v838052b06	2	18	been	be	AUX
0v838052b06	2	19	pursued	pursue	VERB
0v838052b06	2	20	:	:	PUNCT
0v838052b06	2	21	low	low	ADJ
0v838052b06	2	22	-	-	PUNCT
0v838052b06	2	23	loss	loss	NOUN
0v838052b06	2	24	interconnects	interconnect	NOUN
0v838052b06	2	25	for	for	ADP
0v838052b06	2	26	gan	gin	VERB
0v838052b06	2	27	-	-	PUNCT
0v838052b06	2	28	on	on	ADP
0v838052b06	2	29	-	-	PUNCT
0v838052b06	2	30	si	si	X
0v838052b06	2	31	monolithic	monolithic	PROPN
0v838052b06	2	32	microwave	microwave	NOUN
0v838052b06	2	33	integrated	integrate	VERB
0v838052b06	2	34	circuits	circuit	NOUN
0v838052b06	2	35	(	(	PUNCT
0v838052b06	2	36	mmics	mmics	PROPN
0v838052b06	2	37	)	)	PUNCT
0v838052b06	2	38	and	and	CCONJ
0v838052b06	2	39	gan	gan	PROPN
0v838052b06	2	40	impatt	impatt	PROPN
0v838052b06	2	41	diodes	diode	NOUN
0v838052b06	2	42	as	as	ADP
0v838052b06	2	43	novel	novel	ADJ
0v838052b06	2	44	high	high	ADJ
0v838052b06	2	45	power	power	NOUN
0v838052b06	2	46	microwave	microwave	NOUN
0v838052b06	2	47	and	and	CCONJ
0v838052b06	2	48	mm	mm	NOUN
0v838052b06	2	49	-	-	PUNCT
0v838052b06	2	50	wave	wave	NOUN
0v838052b06	2	51	sources.low	sources.low	NUM
0v838052b06	2	52	-	-	PUNCT
0v838052b06	2	53	loss	loss	NOUN
0v838052b06	2	54	interconnects	interconnect	NOUN
0v838052b06	2	55	are	be	AUX
0v838052b06	2	56	important	important	ADJ
0v838052b06	2	57	for	for	ADP
0v838052b06	2	58	maximizing	maximize	VERB
0v838052b06	2	59	circuit	circuit	NOUN
0v838052b06	2	60	performance	performance	NOUN
0v838052b06	2	61	in	in	ADP
0v838052b06	2	62	amplifiers	amplifier	NOUN
0v838052b06	2	63	and	and	CCONJ
0v838052b06	2	64	oscillators	oscillator	NOUN
0v838052b06	2	65	,	,	PUNCT
0v838052b06	2	66	but	but	CCONJ
0v838052b06	2	67	have	have	AUX
0v838052b06	2	68	proven	prove	VERB
0v838052b06	2	69	challenging	challenging	ADJ
0v838052b06	2	70	to	to	PART
0v838052b06	2	71	realize	realize	VERB
0v838052b06	2	72	in	in	ADP
0v838052b06	2	73	low	low	ADJ
0v838052b06	2	74	-	-	PUNCT
0v838052b06	2	75	cost	cost	NOUN
0v838052b06	2	76	gan	gin	VERB
0v838052b06	2	77	-	-	PUNCT
0v838052b06	2	78	on	on	ADP
0v838052b06	2	79	-	-	PUNCT
0v838052b06	2	80	si	si	NOUN
0v838052b06	2	81	technology	technology	NOUN
0v838052b06	2	82	.	.	PUNCT
0v838052b06	3	1	in	in	ADP
0v838052b06	3	2	this	this	DET
0v838052b06	3	3	work	work	NOUN
0v838052b06	3	4	,	,	PUNCT
0v838052b06	3	5	low	low	ADJ
0v838052b06	3	6	-	-	PUNCT
0v838052b06	3	7	loss	loss	NOUN
0v838052b06	3	8	coplanar	coplanar	NOUN
0v838052b06	3	9	waveguides	waveguide	VERB
0v838052b06	3	10	(	(	PUNCT
0v838052b06	3	11	cpws	cpws	NOUN
0v838052b06	3	12	)	)	PUNCT
0v838052b06	3	13	on	on	ADP
0v838052b06	3	14	algan	algan	PROPN
0v838052b06	3	15	/	/	SYM
0v838052b06	3	16	gan	gan	PROPN
0v838052b06	3	17	hemt	hemt	PROPN
0v838052b06	3	18	heterostructures	heterostructure	NOUN
0v838052b06	3	19	grown	grow	VERB
0v838052b06	3	20	on	on	ADP
0v838052b06	3	21	high	high	ADJ
0v838052b06	3	22	-	-	PUNCT
0v838052b06	3	23	resistivity	resistivity	NOUN
0v838052b06	3	24	si	si	NOUN
0v838052b06	3	25	substrates	substrate	NOUN
0v838052b06	3	26	(	(	PUNCT
0v838052b06	3	27	gan	gan	VERB
0v838052b06	3	28	-	-	PUNCT
0v838052b06	3	29	on	on	ADP
0v838052b06	3	30	-	-	PUNCT
0v838052b06	3	31	si	si	NOUN
0v838052b06	3	32	)	)	PUNCT
0v838052b06	3	33	are	be	AUX
0v838052b06	3	34	demonstrated	demonstrate	VERB
0v838052b06	3	35	.	.	PUNCT
0v838052b06	4	1	performance	performance	NOUN
0v838052b06	4	2	has	have	AUX
0v838052b06	4	3	been	be	AUX
0v838052b06	4	4	measured	measure	VERB
0v838052b06	4	5	from	from	ADP
0v838052b06	4	6	0.1	0.1	NUM
0v838052b06	4	7	to	to	PART
0v838052b06	4	8	20	20	NUM
0v838052b06	4	9	ghz	ghz	NOUN
0v838052b06	4	10	,	,	PUNCT
0v838052b06	4	11	and	and	CCONJ
0v838052b06	4	12	loss	loss	NOUN
0v838052b06	4	13	as	as	ADV
0v838052b06	4	14	low	low	ADJ
0v838052b06	4	15	as	as	ADP
0v838052b06	4	16	0.27	0.27	NUM
0v838052b06	4	17	db	db	NOUN
0v838052b06	4	18	/	/	SYM
0v838052b06	4	19	mm	mm	NOUN
0v838052b06	4	20	at	at	ADP
0v838052b06	4	21	20	20	NUM
0v838052b06	4	22	ghz	ghz	NOUN
0v838052b06	4	23	have	have	AUX
0v838052b06	4	24	been	be	AUX
0v838052b06	4	25	achieved	achieve	VERB
0v838052b06	4	26	.	.	PUNCT
0v838052b06	5	1	in	in	ADP
0v838052b06	5	2	addition	addition	NOUN
0v838052b06	5	3	,	,	PUNCT
0v838052b06	5	4	the	the	DET
0v838052b06	5	5	nonlinear	nonlinear	ADJ
0v838052b06	5	6	behavior	behavior	NOUN
0v838052b06	5	7	of	of	ADP
0v838052b06	5	8	the	the	DET
0v838052b06	5	9	cpw	cpw	NOUN
0v838052b06	5	10	lines	line	NOUN
0v838052b06	5	11	were	be	AUX
0v838052b06	5	12	experimentally	experimentally	ADV
0v838052b06	5	13	characterized	characterize	VERB
0v838052b06	5	14	using	use	VERB
0v838052b06	5	15	large	large	ADJ
0v838052b06	5	16	-	-	PUNCT
0v838052b06	5	17	signal	signal	NOUN
0v838052b06	5	18	measurements	measurement	NOUN
0v838052b06	5	19	.	.	PUNCT
0v838052b06	6	1	in	in	ADP
0v838052b06	6	2	contrast	contrast	NOUN
0v838052b06	6	3	to	to	ADP
0v838052b06	6	4	the	the	DET
0v838052b06	6	5	small	small	ADJ
0v838052b06	6	6	-	-	PUNCT
0v838052b06	6	7	signal	signal	NOUN
0v838052b06	6	8	loss	loss	NOUN
0v838052b06	6	9	,	,	PUNCT
0v838052b06	6	10	more	more	ADV
0v838052b06	6	11	significant	significant	ADJ
0v838052b06	6	12	differences	difference	NOUN
0v838052b06	6	13	in	in	ADP
0v838052b06	6	14	secondand	secondand	NOUN
0v838052b06	6	15	third	third	ADJ
0v838052b06	6	16	-	-	PUNCT
0v838052b06	6	17	order	order	NOUN
0v838052b06	6	18	nonlinearity	nonlinearity	NOUN
0v838052b06	6	19	,	,	PUNCT
0v838052b06	6	20	and	and	CCONJ
0v838052b06	6	21	thus	thus	ADV
0v838052b06	6	22	intermodulation	intermodulation	NOUN
0v838052b06	6	23	,	,	PUNCT
0v838052b06	6	24	are	be	AUX
0v838052b06	6	25	observed	observe	VERB
0v838052b06	6	26	between	between	ADP
0v838052b06	6	27	si	si	X
0v838052b06	6	28	and	and	CCONJ
0v838052b06	6	29	sic	sic	VERB
0v838052b06	6	30	substrates.impatt	substrates.impatt	NOUN
0v838052b06	6	31	diodes	diode	NOUN
0v838052b06	6	32	employ	employ	VERB
0v838052b06	6	33	impact	impact	NOUN
0v838052b06	6	34	ionization	ionization	NOUN
0v838052b06	6	35	and	and	CCONJ
0v838052b06	6	36	transit	transit	NOUN
0v838052b06	6	37	time	time	NOUN
0v838052b06	6	38	effects	effect	NOUN
0v838052b06	6	39	to	to	PART
0v838052b06	6	40	directly	directly	ADV
0v838052b06	6	41	generate	generate	VERB
0v838052b06	6	42	rf	rf	ADJ
0v838052b06	6	43	power	power	NOUN
0v838052b06	6	44	with	with	ADP
0v838052b06	6	45	high	high	ADJ
0v838052b06	6	46	efficiency	efficiency	NOUN
0v838052b06	6	47	.	.	PUNCT
0v838052b06	7	1	however	however	ADV
0v838052b06	7	2	,	,	PUNCT
0v838052b06	7	3	the	the	DET
0v838052b06	7	4	impact	impact	NOUN
0v838052b06	7	5	ionization	ionization	NOUN
0v838052b06	7	6	behavior	behavior	NOUN
0v838052b06	7	7	of	of	ADP
0v838052b06	7	8	gan	gan	PROPN
0v838052b06	7	9	is	be	AUX
0v838052b06	7	10	not	not	PART
0v838052b06	7	11	well	well	ADV
0v838052b06	7	12	understood	understand	VERB
0v838052b06	7	13	.	.	PUNCT
0v838052b06	8	1	in	in	ADP
0v838052b06	8	2	order	order	NOUN
0v838052b06	8	3	to	to	PART
0v838052b06	8	4	measure	measure	VERB
0v838052b06	8	5	the	the	DET
0v838052b06	8	6	impact	impact	NOUN
0v838052b06	8	7	ionization	ionization	NOUN
0v838052b06	8	8	rates	rate	NOUN
0v838052b06	8	9	of	of	ADP
0v838052b06	8	10	electrons	electron	NOUN
0v838052b06	8	11	and	and	CCONJ
0v838052b06	8	12	holes	hole	NOUN
0v838052b06	8	13	in	in	ADP
0v838052b06	8	14	gan	gan	PROPN
0v838052b06	8	15	,	,	PUNCT
0v838052b06	8	16	p	p	PROPN
0v838052b06	8	17	-	-	PUNCT
0v838052b06	8	18	i	i	NUM
0v838052b06	8	19	-	-	PUNCT
0v838052b06	8	20	n	n	NOUN
0v838052b06	8	21	avalanche	avalanche	NOUN
0v838052b06	8	22	diodes	diode	NOUN
0v838052b06	8	23	grown	grow	VERB
0v838052b06	8	24	on	on	ADP
0v838052b06	8	25	native	native	ADJ
0v838052b06	8	26	gan	gan	PROPN
0v838052b06	8	27	substrates	substrate	NOUN
0v838052b06	8	28	have	have	AUX
0v838052b06	8	29	been	be	AUX
0v838052b06	8	30	fabricated	fabricate	VERB
0v838052b06	8	31	and	and	CCONJ
0v838052b06	8	32	characterized	characterize	VERB
0v838052b06	8	33	.	.	PUNCT
0v838052b06	9	1	by	by	ADP
0v838052b06	9	2	incorporating	incorporate	VERB
0v838052b06	9	3	a	a	DET
0v838052b06	9	4	pseudomorphic	pseudomorphic	ADJ
0v838052b06	9	5	in0.07ga0.93n	in0.07ga0.93n	ADJ
0v838052b06	9	6	layer	layer	NOUN
0v838052b06	9	7	below	below	ADP
0v838052b06	9	8	the	the	DET
0v838052b06	9	9	drift	drift	NOUN
0v838052b06	9	10	layer	layer	NOUN
0v838052b06	9	11	,	,	PUNCT
0v838052b06	9	12	the	the	DET
0v838052b06	9	13	photomultiplication	photomultiplication	NOUN
0v838052b06	9	14	method	method	NOUN
0v838052b06	9	15	was	be	AUX
0v838052b06	9	16	used	use	VERB
0v838052b06	9	17	to	to	PART
0v838052b06	9	18	experimentally	experimentally	VERB
0v838052b06	9	19	determine	determine	VERB
0v838052b06	9	20	the	the	DET
0v838052b06	9	21	impact	impact	NOUN
0v838052b06	9	22	ionization	ionization	NOUN
0v838052b06	9	23	coefficients	coefficient	NOUN
0v838052b06	9	24	.	.	PUNCT
0v838052b06	10	1	the	the	DET
0v838052b06	10	2	impact	impact	NOUN
0v838052b06	10	3	ionization	ionization	NOUN
0v838052b06	10	4	coefficients	coefficient	NOUN
0v838052b06	10	5	of	of	ADP
0v838052b06	10	6	electrons	electron	NOUN
0v838052b06	10	7	and	and	CCONJ
0v838052b06	10	8	holes	hole	NOUN
0v838052b06	10	9	are	be	AUX
0v838052b06	10	10	also	also	ADV
0v838052b06	10	11	measured	measure	VERB
0v838052b06	10	12	at	at	ADP
0v838052b06	10	13	elevated	elevated	ADJ
0v838052b06	10	14	temperatures	temperature	NOUN
0v838052b06	10	15	up	up	ADV
0v838052b06	10	16	to	to	PART
0v838052b06	10	17	498	498	NUM
0v838052b06	10	18	k.	k.	NOUN
0v838052b06	10	19	in	in	ADP
0v838052b06	10	20	addition	addition	NOUN
0v838052b06	10	21	,	,	PUNCT
0v838052b06	10	22	the	the	DET
0v838052b06	10	23	low	low	ADJ
0v838052b06	10	24	frequency	frequency	NOUN
0v838052b06	10	25	noise	noise	NOUN
0v838052b06	10	26	characteristics	characteristic	NOUN
0v838052b06	10	27	of	of	ADP
0v838052b06	10	28	these	these	DET
0v838052b06	10	29	devices	device	NOUN
0v838052b06	10	30	have	have	AUX
0v838052b06	10	31	been	be	AUX
0v838052b06	10	32	measured	measure	VERB
0v838052b06	10	33	under	under	ADP
0v838052b06	10	34	forward	forward	ADV
0v838052b06	10	35	and	and	CCONJ
0v838052b06	10	36	reverse	reverse	ADJ
0v838052b06	10	37	bias	bias	NOUN
0v838052b06	10	38	conditions	condition	NOUN
0v838052b06	10	39	.	.	PUNCT
0v838052b06	11	1	at	at	ADP
0v838052b06	11	2	reverse	reverse	ADJ
0v838052b06	11	3	biases	bias	NOUN
0v838052b06	11	4	in	in	ADP
0v838052b06	11	5	the	the	DET
0v838052b06	11	6	avalanche	avalanche	NOUN
0v838052b06	11	7	regime	regime	NOUN
0v838052b06	11	8	,	,	PUNCT
0v838052b06	11	9	the	the	DET
0v838052b06	11	10	multiplication	multiplication	NOUN
0v838052b06	11	11	noise	noise	NOUN
0v838052b06	11	12	overwhelms	overwhelm	VERB
0v838052b06	11	13	the	the	DET
0v838052b06	11	14	1	1	NUM
0v838052b06	11	15	/	/	SYM
0v838052b06	11	16	f	f	NOUN
0v838052b06	11	17	noise	noise	NOUN
0v838052b06	11	18	,	,	PUNCT
0v838052b06	11	19	resulting	result	VERB
0v838052b06	11	20	in	in	ADP
0v838052b06	11	21	a	a	DET
0v838052b06	11	22	white	white	ADJ
0v838052b06	11	23	noise	noise	NOUN
0v838052b06	11	24	spectrum	spectrum	NOUN
0v838052b06	11	25	.	.	PUNCT
0v838052b06	12	1	the	the	DET
0v838052b06	12	2	impact	impact	NOUN
0v838052b06	12	3	ionization	ionization	NOUN
0v838052b06	12	4	ratio	ratio	NOUN
0v838052b06	12	5	extracted	extract	VERB
0v838052b06	12	6	from	from	ADP
0v838052b06	12	7	multiplication	multiplication	NOUN
0v838052b06	12	8	noise	noise	NOUN
0v838052b06	12	9	is	be	AUX
0v838052b06	12	10	consistent	consistent	ADJ
0v838052b06	12	11	with	with	ADP
0v838052b06	12	12	impact	impact	NOUN
0v838052b06	12	13	ionization	ionization	NOUN
0v838052b06	12	14	coefficients	coefficient	NOUN
0v838052b06	12	15	obtained	obtain	VERB
0v838052b06	12	16	using	use	VERB
0v838052b06	12	17	the	the	DET
0v838052b06	12	18	photomultiplication	photomultiplication	NOUN
0v838052b06	12	19	method.in	method.in	NUM
0v838052b06	12	20	addition	addition	NOUN
0v838052b06	12	21	,	,	PUNCT
0v838052b06	12	22	the	the	DET
0v838052b06	12	23	dc	dc	PROPN
0v838052b06	12	24	and	and	CCONJ
0v838052b06	12	25	rf	rf	PROPN
0v838052b06	12	26	performance	performance	NOUN
0v838052b06	12	27	of	of	ADP
0v838052b06	12	28	a	a	DET
0v838052b06	12	29	gan	gan	PROPN
0v838052b06	12	30	impatt	impatt	PROPN
0v838052b06	12	31	diode	diode	NOUN
0v838052b06	12	32	operating	operate	VERB
0v838052b06	12	33	at	at	ADP
0v838052b06	12	34	w	w	NOUN
0v838052b06	12	35	-	-	NOUN
0v838052b06	12	36	band	band	NOUN
0v838052b06	12	37	is	be	AUX
0v838052b06	12	38	simulated	simulate	VERB
0v838052b06	12	39	using	use	VERB
0v838052b06	12	40	tcad	tcad	ADJ
0v838052b06	12	41	sentaurus	sentaurus	PROPN
0v838052b06	12	42	.	.	PUNCT
0v838052b06	13	1	numerical	numerical	PROPN
0v838052b06	13	2	simulation	simulation	PROPN
0v838052b06	13	3	results	result	NOUN
0v838052b06	13	4	demonstrate	demonstrate	VERB
0v838052b06	13	5	that	that	SCONJ
0v838052b06	13	6	the	the	DET
0v838052b06	13	7	impatt	impatt	PROPN
0v838052b06	13	8	diode	diode	NOUN
0v838052b06	13	9	is	be	AUX
0v838052b06	13	10	capable	capable	ADJ
0v838052b06	13	11	of	of	ADP
0v838052b06	13	12	generating	generate	VERB
0v838052b06	13	13	rf	rf	PROPN
0v838052b06	13	14	power	power	NOUN
0v838052b06	13	15	larger	large	ADJ
0v838052b06	13	16	than	than	ADP
0v838052b06	13	17	1	1	NUM
0v838052b06	13	18	mw	mw	NOUN
0v838052b06	13	19	/	/	SYM
0v838052b06	13	20	cm2	cm2	NOUN
0v838052b06	13	21	from	from	ADP
0v838052b06	13	22	80	80	NUM
0v838052b06	13	23	ghz	ghz	NOUN
0v838052b06	13	24	to	to	ADP
0v838052b06	13	25	120	120	NUM
0v838052b06	13	26	ghz	ghz	NOUN
0v838052b06	13	27	with	with	ADP
0v838052b06	13	28	an	an	DET
0v838052b06	13	29	efficiency	efficiency	NOUN
0v838052b06	13	30	larger	large	ADJ
0v838052b06	13	31	than	than	ADP
0v838052b06	13	32	18	18	NUM
0v838052b06	13	33	%	%	NOUN
0v838052b06	13	34	over	over	ADP
0v838052b06	13	35	w	w	NOUN
0v838052b06	13	36	-	-	NOUN
0v838052b06	13	37	band	band	NOUN
0v838052b06	13	38	.	.	PUNCT
0v838052b06	14	1	first	first	ADJ
0v838052b06	14	2	and	and	CCONJ
0v838052b06	14	3	second	second	ADJ
0v838052b06	14	4	generation	generation	NOUN
0v838052b06	14	5	gan	gan	PROPN
0v838052b06	14	6	impatt	impatt	PROPN
0v838052b06	14	7	diodes	diode	NOUN
0v838052b06	14	8	grown	grow	VERB
0v838052b06	14	9	on	on	ADP
0v838052b06	14	10	bulk	bulk	ADJ
0v838052b06	14	11	gan	gan	PROPN
0v838052b06	14	12	substrates	substrate	NOUN
0v838052b06	14	13	have	have	AUX
0v838052b06	14	14	been	be	AUX
0v838052b06	14	15	fabricated	fabricate	VERB
0v838052b06	14	16	and	and	CCONJ
0v838052b06	14	17	characterized	characterize	VERB
0v838052b06	14	18	.	.	PUNCT
0v838052b06	15	1	two	two	NUM
0v838052b06	15	2	fabrication	fabrication	NOUN
0v838052b06	15	3	processes	process	NOUN
0v838052b06	15	4	,	,	PUNCT
0v838052b06	15	5	based	base	VERB
0v838052b06	15	6	on	on	ADP
0v838052b06	15	7	mesa	mesa	NOUN
0v838052b06	15	8	etching	etching	NOUN
0v838052b06	15	9	and	and	CCONJ
0v838052b06	15	10	ion	ion	NOUN
0v838052b06	15	11	implantation	implantation	NOUN
0v838052b06	15	12	for	for	ADP
0v838052b06	15	13	isolation	isolation	NOUN
0v838052b06	15	14	,	,	PUNCT
0v838052b06	15	15	were	be	AUX
0v838052b06	15	16	developed	develop	VERB
0v838052b06	15	17	and	and	CCONJ
0v838052b06	15	18	their	their	PRON
0v838052b06	15	19	influence	influence	NOUN
0v838052b06	15	20	on	on	ADP
0v838052b06	15	21	the	the	DET
0v838052b06	15	22	diode	diode	NOUN
0v838052b06	15	23	's	's	PART
0v838052b06	15	24	forward	forward	ADV
0v838052b06	15	25	and	and	CCONJ
0v838052b06	15	26	reverse	reverse	VERB
0v838052b06	15	27	iv	iv	PROPN
0v838052b06	15	28	characteristic	characteristic	NOUN
0v838052b06	15	29	were	be	AUX
0v838052b06	15	30	compared	compare	VERB
0v838052b06	15	31	.	.	PUNCT
0v838052b06	16	1	the	the	DET
0v838052b06	16	2	1st	1st	ADJ
0v838052b06	16	3	generation	generation	NOUN
0v838052b06	16	4	impatt	impatt	PROPN
0v838052b06	16	5	diodes	diode	NOUN
0v838052b06	16	6	show	show	VERB
0v838052b06	16	7	poor	poor	ADJ
0v838052b06	16	8	reverse	reverse	ADJ
0v838052b06	16	9	-	-	PUNCT
0v838052b06	16	10	bias	bias	NOUN
0v838052b06	16	11	characteristics	characteristic	NOUN
0v838052b06	16	12	due	due	ADP
0v838052b06	16	13	to	to	ADP
0v838052b06	16	14	inadequate	inadequate	ADJ
0v838052b06	16	15	edge	edge	NOUN
0v838052b06	16	16	termination	termination	NOUN
0v838052b06	16	17	.	.	PUNCT
0v838052b06	17	1	compared	compare	VERB
0v838052b06	17	2	to	to	ADP
0v838052b06	17	3	the	the	DET
0v838052b06	17	4	1st	1st	ADJ
0v838052b06	17	5	generation	generation	NOUN
0v838052b06	17	6	impatt	impatt	PROPN
0v838052b06	17	7	diode	diode	NOUN
0v838052b06	17	8	,	,	PUNCT
0v838052b06	17	9	the	the	DET
0v838052b06	17	10	second	second	ADJ
0v838052b06	17	11	generation	generation	NOUN
0v838052b06	17	12	impatt	impatt	PROPN
0v838052b06	17	13	diodes	diode	NOUN
0v838052b06	17	14	exhibit	exhibit	VERB
0v838052b06	17	15	promising	promise	VERB
0v838052b06	17	16	avalanche	avalanche	NOUN
0v838052b06	17	17	behavior	behavior	NOUN
0v838052b06	17	18	with	with	ADP
0v838052b06	17	19	improved	improved	ADJ
0v838052b06	17	20	edge	edge	NOUN
0v838052b06	17	21	termination	termination	NOUN
0v838052b06	17	22	methods	method	NOUN
0v838052b06	17	23	.	.	PUNCT
0v838052b06	18	1	however	however	ADV
0v838052b06	18	2	,	,	PUNCT
0v838052b06	18	3	the	the	DET
0v838052b06	18	4	rf	rf	ADJ
0v838052b06	18	5	characteristics	characteristic	NOUN
0v838052b06	18	6	of	of	ADP
0v838052b06	18	7	the	the	DET
0v838052b06	18	8	second	second	ADJ
0v838052b06	18	9	generation	generation	NOUN
0v838052b06	18	10	impatt	impatt	PROPN
0v838052b06	18	11	diodes	diode	NOUN
0v838052b06	18	12	do	do	AUX
0v838052b06	18	13	not	not	PART
0v838052b06	18	14	exhibit	exhibit	VERB
0v838052b06	18	15	negative	negative	ADJ
0v838052b06	18	16	conductance	conductance	NOUN
0v838052b06	18	17	,	,	PUNCT
0v838052b06	18	18	possibly	possibly	ADV
0v838052b06	18	19	due	due	ADP
0v838052b06	18	20	to	to	ADP
0v838052b06	18	21	large	large	ADJ
0v838052b06	18	22	series	series	NOUN
0v838052b06	18	23	resistance.in	resistance.in	NUM
0v838052b06	18	24	terms	term	NOUN
0v838052b06	18	25	of	of	ADP
0v838052b06	18	26	future	future	ADJ
0v838052b06	18	27	work	work	NOUN
0v838052b06	18	28	,	,	PUNCT
0v838052b06	18	29	the	the	DET
0v838052b06	18	30	demonstration	demonstration	NOUN
0v838052b06	18	31	of	of	ADP
0v838052b06	18	32	functional	functional	ADJ
0v838052b06	18	33	gan	gan	PROPN
0v838052b06	18	34	impatt	impatt	PROPN
0v838052b06	18	35	diodes	diode	NOUN
0v838052b06	18	36	and	and	CCONJ
0v838052b06	18	37	oscillators	oscillator	NOUN
0v838052b06	18	38	based	base	VERB
0v838052b06	18	39	on	on	ADP
0v838052b06	18	40	them	they	PRON
0v838052b06	18	41	is	be	AUX
0v838052b06	18	42	proposed	propose	VERB
0v838052b06	18	43	.	.	PUNCT