id	sid	tid	token	lemma	pos
1n79h418n2r	1	1	rapid	rapid	ADJ
1n79h418n2r	1	2	development	development	NOUN
1n79h418n2r	1	3	of	of	ADP
1n79h418n2r	1	4	wireless	wireless	ADJ
1n79h418n2r	1	5	communication	communication	NOUN
1n79h418n2r	1	6	systems	system	NOUN
1n79h418n2r	1	7	,	,	PUNCT
1n79h418n2r	1	8	including	include	VERB
1n79h418n2r	1	9	the	the	DET
1n79h418n2r	1	10	deployment	deployment	NOUN
1n79h418n2r	1	11	of	of	ADP
1n79h418n2r	1	12	5	5	NUM
1n79h418n2r	1	13	g	g	NOUN
1n79h418n2r	1	14	networks	network	NOUN
1n79h418n2r	1	15	,	,	PUNCT
1n79h418n2r	1	16	calls	call	VERB
1n79h418n2r	1	17	for	for	ADP
1n79h418n2r	1	18	robust	robust	ADJ
1n79h418n2r	1	19	electronic	electronic	ADJ
1n79h418n2r	1	20	components	component	NOUN
1n79h418n2r	1	21	that	that	PRON
1n79h418n2r	1	22	can	can	AUX
1n79h418n2r	1	23	efficiently	efficiently	ADV
1n79h418n2r	1	24	support	support	VERB
1n79h418n2r	1	25	the	the	DET
1n79h418n2r	1	26	transmission	transmission	NOUN
1n79h418n2r	1	27	of	of	ADP
1n79h418n2r	1	28	increasingly	increasingly	ADV
1n79h418n2r	1	29	high	high	ADJ
1n79h418n2r	1	30	data	datum	NOUN
1n79h418n2r	1	31	rates	rate	NOUN
1n79h418n2r	1	32	with	with	ADP
1n79h418n2r	1	33	wider	wide	ADJ
1n79h418n2r	1	34	bandwidths	bandwidth	NOUN
1n79h418n2r	1	35	and	and	CCONJ
1n79h418n2r	1	36	at	at	ADP
1n79h418n2r	1	37	higher	high	ADJ
1n79h418n2r	1	38	frequencies	frequency	NOUN
1n79h418n2r	1	39	.	.	PUNCT
1n79h418n2r	2	1	iii	iii	X
1n79h418n2r	2	2	-	-	PUNCT
1n79h418n2r	2	3	nitride	nitride	NOUN
1n79h418n2r	2	4	based	base	VERB
1n79h418n2r	2	5	high	high	ADJ
1n79h418n2r	2	6	electron	electron	NOUN
1n79h418n2r	2	7	mobility	mobility	NOUN
1n79h418n2r	2	8	transistors	transistor	NOUN
1n79h418n2r	2	9	are	be	AUX
1n79h418n2r	2	10	ideal	ideal	ADJ
1n79h418n2r	2	11	candidates	candidate	NOUN
1n79h418n2r	2	12	for	for	ADP
1n79h418n2r	2	13	such	such	ADJ
1n79h418n2r	2	14	systems	system	NOUN
1n79h418n2r	2	15	due	due	ADP
1n79h418n2r	2	16	to	to	ADP
1n79h418n2r	2	17	their	their	PRON
1n79h418n2r	2	18	wide	wide	ADJ
1n79h418n2r	2	19	/	/	SYM
1n79h418n2r	2	20	ultra	ultra	ADJ
1n79h418n2r	2	21	-	-	ADJ
1n79h418n2r	2	22	wide	wide	ADJ
1n79h418n2r	2	23	bandgaps	bandgap	NOUN
1n79h418n2r	2	24	,	,	PUNCT
1n79h418n2r	2	25	high	high	ADJ
1n79h418n2r	2	26	carrier	carrier	NOUN
1n79h418n2r	2	27	concentrations	concentration	NOUN
1n79h418n2r	2	28	,	,	PUNCT
1n79h418n2r	2	29	as	as	ADV
1n79h418n2r	2	30	well	well	ADV
1n79h418n2r	2	31	as	as	ADP
1n79h418n2r	2	32	high	high	ADJ
1n79h418n2r	2	33	carrier	carrier	NOUN
1n79h418n2r	2	34	velocities	velocity	NOUN
1n79h418n2r	2	35	.	.	PUNCT
1n79h418n2r	3	1	this	this	DET
1n79h418n2r	3	2	work	work	NOUN
1n79h418n2r	3	3	explores	explore	VERB
1n79h418n2r	3	4	and	and	CCONJ
1n79h418n2r	3	5	evaluates	evaluate	VERB
1n79h418n2r	3	6	two	two	NUM
1n79h418n2r	3	7	separate	separate	ADJ
1n79h418n2r	3	8	approaches	approach	NOUN
1n79h418n2r	3	9	to	to	PART
1n79h418n2r	3	10	advance	advance	VERB
1n79h418n2r	3	11	beyond	beyond	ADP
1n79h418n2r	3	12	the	the	DET
1n79h418n2r	3	13	performance	performance	NOUN
1n79h418n2r	3	14	of	of	ADP
1n79h418n2r	3	15	the	the	DET
1n79h418n2r	3	16	conventional	conventional	ADJ
1n79h418n2r	3	17	gan	gan	PROPN
1n79h418n2r	3	18	hemt	hemt	PROPN
1n79h418n2r	3	19	technology	technology	PROPN
1n79h418n2r	3	20	.	.	PUNCT
1n79h418n2r	4	1	fabricated	fabricate	VERB
1n79h418n2r	4	2	algan	algan	PROPN
1n79h418n2r	4	3	channel	channel	PROPN
1n79h418n2r	4	4	hemts	hemts	PROPN
1n79h418n2r	4	5	intended	intend	VERB
1n79h418n2r	4	6	for	for	ADP
1n79h418n2r	4	7	rf	rf	PROPN
1n79h418n2r	4	8	power	power	NOUN
1n79h418n2r	4	9	applications	application	NOUN
1n79h418n2r	4	10	have	have	AUX
1n79h418n2r	4	11	been	be	AUX
1n79h418n2r	4	12	measured	measure	VERB
1n79h418n2r	4	13	in	in	ADP
1n79h418n2r	4	14	dc	dc	PROPN
1n79h418n2r	4	15	and	and	CCONJ
1n79h418n2r	4	16	rf	rf	ADJ
1n79h418n2r	4	17	from	from	ADP
1n79h418n2r	4	18	25	25	NUM
1n79h418n2r	4	19	°	°	NOUN
1n79h418n2r	4	20	c	c	NOUN
1n79h418n2r	4	21	to	to	PART
1n79h418n2r	4	22	150	150	NUM
1n79h418n2r	4	23	°	°	NOUN
1n79h418n2r	4	24	c	c	NOUN
1n79h418n2r	4	25	.	.	PROPN
1n79h418n2r	4	26	mobility	mobility	PROPN
1n79h418n2r	4	27	,	,	PUNCT
1n79h418n2r	4	28	effective	effective	ADJ
1n79h418n2r	4	29	velocity	velocity	NOUN
1n79h418n2r	4	30	,	,	PUNCT
1n79h418n2r	4	31	and	and	CCONJ
1n79h418n2r	4	32	ft	ft	NOUN
1n79h418n2r	4	33	have	have	AUX
1n79h418n2r	4	34	been	be	AUX
1n79h418n2r	4	35	extracted	extract	VERB
1n79h418n2r	4	36	at	at	ADP
1n79h418n2r	4	37	all	all	DET
1n79h418n2r	4	38	measured	measure	VERB
1n79h418n2r	4	39	temperatures	temperature	NOUN
1n79h418n2r	4	40	.	.	PUNCT
1n79h418n2r	5	1	the	the	DET
1n79h418n2r	5	2	temperature	temperature	NOUN
1n79h418n2r	5	3	sensitivities	sensitivity	NOUN
1n79h418n2r	5	4	of	of	ADP
1n79h418n2r	5	5	mobility	mobility	NOUN
1n79h418n2r	5	6	and	and	CCONJ
1n79h418n2r	5	7	velocity	velocity	NOUN
1n79h418n2r	5	8	are	be	AUX
1n79h418n2r	5	9	modest	modest	ADJ
1n79h418n2r	5	10	compared	compare	VERB
1n79h418n2r	5	11	to	to	ADP
1n79h418n2r	5	12	devices	device	NOUN
1n79h418n2r	5	13	composed	compose	VERB
1n79h418n2r	5	14	of	of	ADP
1n79h418n2r	5	15	si	si	PROPN
1n79h418n2r	5	16	,	,	PUNCT
1n79h418n2r	5	17	gaas	gaas	NOUN
1n79h418n2r	5	18	and	and	CCONJ
1n79h418n2r	5	19	gan	gan	PROPN
1n79h418n2r	5	20	channel	channel	PROPN
1n79h418n2r	5	21	.	.	PUNCT
1n79h418n2r	6	1	ferroelectric	ferroelectric	ADJ
1n79h418n2r	6	2	gated	gate	VERB
1n79h418n2r	6	3	gan	gan	PROPN
1n79h418n2r	6	4	hemts	hemts	PROPN
1n79h418n2r	6	5	are	be	AUX
1n79h418n2r	6	6	explored	explore	VERB
1n79h418n2r	6	7	as	as	ADP
1n79h418n2r	6	8	potential	potential	ADJ
1n79h418n2r	6	9	candidates	candidate	NOUN
1n79h418n2r	6	10	for	for	ADP
1n79h418n2r	6	11	rf	rf	PROPN
1n79h418n2r	6	12	/	/	SYM
1n79h418n2r	6	13	mm	mm	NOUN
1n79h418n2r	6	14	-	-	PUNCT
1n79h418n2r	6	15	wave	wave	NOUN
1n79h418n2r	6	16	switch	switch	NOUN
1n79h418n2r	6	17	applications	application	NOUN
1n79h418n2r	6	18	.	.	PUNCT
1n79h418n2r	7	1	hf0.5zr0.5o2	hf0.5zr0.5o2	NOUN
1n79h418n2r	7	2	is	be	AUX
1n79h418n2r	7	3	implemented	implement	VERB
1n79h418n2r	7	4	in	in	ADP
1n79h418n2r	7	5	the	the	DET
1n79h418n2r	7	6	gate	gate	NOUN
1n79h418n2r	7	7	stack	stack	NOUN
1n79h418n2r	7	8	on	on	ADP
1n79h418n2r	7	9	a	a	DET
1n79h418n2r	7	10	standard	standard	ADJ
1n79h418n2r	7	11	algan	algan	PROPN
1n79h418n2r	7	12	/	/	SYM
1n79h418n2r	7	13	gan	gan	PROPN
1n79h418n2r	7	14	hemt	hemt	PROPN
1n79h418n2r	7	15	structure	structure	NOUN
1n79h418n2r	7	16	to	to	PART
1n79h418n2r	7	17	utilize	utilize	VERB
1n79h418n2r	7	18	ferroelectric	ferroelectric	ADJ
1n79h418n2r	7	19	polarization	polarization	NOUN
1n79h418n2r	7	20	in	in	ADP
1n79h418n2r	7	21	addition	addition	NOUN
1n79h418n2r	7	22	to	to	ADP
1n79h418n2r	7	23	the	the	DET
1n79h418n2r	7	24	spontaneous	spontaneous	ADJ
1n79h418n2r	7	25	and	and	CCONJ
1n79h418n2r	7	26	piezoelectric	piezoelectric	ADJ
1n79h418n2r	7	27	polarization	polarization	NOUN
1n79h418n2r	7	28	provided	provide	VERB
1n79h418n2r	7	29	by	by	ADP
1n79h418n2r	7	30	algan	algan	PROPN
1n79h418n2r	7	31	/	/	SYM
1n79h418n2r	7	32	gan	gan	PROPN
1n79h418n2r	7	33	.	.	PUNCT
1n79h418n2r	8	1	counter	counter	PROPN
1n79h418n2r	8	2	-	-	ADJ
1n79h418n2r	8	3	clockwise	clockwise	ADJ
1n79h418n2r	8	4	hysteresis	hysteresis	NOUN
1n79h418n2r	8	5	has	have	AUX
1n79h418n2r	8	6	been	be	AUX
1n79h418n2r	8	7	demonstrated	demonstrate	VERB
1n79h418n2r	8	8	in	in	ADP
1n79h418n2r	8	9	dc	dc	PROPN
1n79h418n2r	8	10	measurements	measurement	NOUN
1n79h418n2r	8	11	.	.	PUNCT
1n79h418n2r	9	1	switch	switch	VERB
1n79h418n2r	9	2	figure	figure	NOUN
1n79h418n2r	9	3	of	of	ADP
1n79h418n2r	9	4	merit	merit	NOUN
1n79h418n2r	9	5	of	of	ADP
1n79h418n2r	9	6	1	1	NUM
1n79h418n2r	9	7	-	-	SYM
1n79h418n2r	9	8	2.1	2.1	NUM
1n79h418n2r	9	9	thz	thz	PROPN
1n79h418n2r	9	10	has	have	AUX
1n79h418n2r	9	11	been	be	AUX
1n79h418n2r	9	12	achieved	achieve	VERB
1n79h418n2r	9	13	from	from	ADP
1n79h418n2r	9	14	10	10	NUM
1n79h418n2r	9	15	mhz	mhz	NOUN
1n79h418n2r	9	16	to	to	ADP
1n79h418n2r	9	17	67	67	NUM
1n79h418n2r	9	18	ghz	ghz	NOUN
1n79h418n2r	9	19	,	,	PUNCT
1n79h418n2r	9	20	which	which	PRON
1n79h418n2r	9	21	is	be	AUX
1n79h418n2r	9	22	among	among	ADP
1n79h418n2r	9	23	the	the	DET
1n79h418n2r	9	24	highest	high	ADJ
1n79h418n2r	9	25	in	in	ADP
1n79h418n2r	9	26	single	single	ADJ
1n79h418n2r	9	27	channel	channel	NOUN
1n79h418n2r	9	28	three	three	NUM
1n79h418n2r	9	29	-	-	PUNCT
1n79h418n2r	9	30	terminal	terminal	NOUN
1n79h418n2r	9	31	devices	device	NOUN
1n79h418n2r	9	32	to	to	ADP
1n79h418n2r	9	33	the	the	DET
1n79h418n2r	9	34	best	good	ADJ
1n79h418n2r	9	35	of	of	ADP
1n79h418n2r	9	36	our	our	PRON
1n79h418n2r	9	37	knowledge	knowledge	NOUN
1n79h418n2r	9	38	.	.	PUNCT
1n79h418n2r	10	1	regrown	regrown	VERB
1n79h418n2r	11	1	n+	n+	PROPN
1n79h418n2r	11	2	gan	gan	PROPN
1n79h418n2r	11	3	has	have	AUX
1n79h418n2r	11	4	also	also	ADV
1n79h418n2r	11	5	been	be	AUX
1n79h418n2r	11	6	explored	explore	VERB
1n79h418n2r	11	7	experimentally	experimentally	ADV
1n79h418n2r	11	8	as	as	ADP
1n79h418n2r	11	9	a	a	DET
1n79h418n2r	11	10	replacement	replacement	NOUN
1n79h418n2r	11	11	for	for	ADP
1n79h418n2r	11	12	the	the	DET
1n79h418n2r	11	13	alloyed	alloyed	ADJ
1n79h418n2r	11	14	source	source	NOUN
1n79h418n2r	11	15	/	/	SYM
1n79h418n2r	11	16	drain	drain	NOUN
1n79h418n2r	11	17	ohmic	ohmic	ADJ
1n79h418n2r	11	18	contacts	contact	NOUN
1n79h418n2r	11	19	to	to	PART
1n79h418n2r	11	20	improve	improve	VERB
1n79h418n2r	11	21	on	on	ADP
1n79h418n2r	11	22	-	-	PUNCT
1n79h418n2r	11	23	resistance	resistance	NOUN
1n79h418n2r	11	24	.	.	PUNCT
1n79h418n2r	12	1	simulation	simulation	NOUN
1n79h418n2r	12	2	based	base	VERB
1n79h418n2r	12	3	effort	effort	NOUN
1n79h418n2r	12	4	is	be	AUX
1n79h418n2r	12	5	presented	present	VERB
1n79h418n2r	12	6	to	to	PART
1n79h418n2r	12	7	demonstrate	demonstrate	VERB
1n79h418n2r	12	8	a	a	DET
1n79h418n2r	12	9	multichannel	multichannel	NOUN
1n79h418n2r	12	10	design	design	NOUN
1n79h418n2r	12	11	for	for	ADP
1n79h418n2r	12	12	further	far	ADV
1n79h418n2r	12	13	on	on	ADP
1n79h418n2r	12	14	-	-	PUNCT
1n79h418n2r	12	15	resistance	resistance	NOUN
1n79h418n2r	12	16	improvement	improvement	NOUN
1n79h418n2r	12	17	.	.	PUNCT