id	sid	tid	token	lemma	pos
2r36tx33k81	1	1	due	due	ADP
2r36tx33k81	1	2	to	to	ADP
2r36tx33k81	1	3	the	the	DET
2r36tx33k81	1	4	exceptional	exceptional	ADJ
2r36tx33k81	1	5	transmission	transmission	NOUN
2r36tx33k81	1	6	property	property	NOUN
2r36tx33k81	1	7	of	of	ADP
2r36tx33k81	1	8	optical	optical	ADJ
2r36tx33k81	1	9	fiber	fiber	NOUN
2r36tx33k81	1	10	and	and	CCONJ
2r36tx33k81	1	11	the	the	DET
2r36tx33k81	1	12	development	development	NOUN
2r36tx33k81	1	13	of	of	ADP
2r36tx33k81	1	14	high	high	ADJ
2r36tx33k81	1	15	-	-	PUNCT
2r36tx33k81	1	16	performance	performance	NOUN
2r36tx33k81	1	17	optoelectronic	optoelectronic	NOUN
2r36tx33k81	1	18	components	component	NOUN
2r36tx33k81	1	19	,	,	PUNCT
2r36tx33k81	1	20	microwave	microwave	NOUN
2r36tx33k81	1	21	photonic	photonic	ADJ
2r36tx33k81	1	22	links	link	NOUN
2r36tx33k81	1	23	have	have	AUX
2r36tx33k81	1	24	been	be	AUX
2r36tx33k81	1	25	used	use	VERB
2r36tx33k81	1	26	in	in	ADP
2r36tx33k81	1	27	many	many	ADJ
2r36tx33k81	1	28	applications	application	NOUN
2r36tx33k81	1	29	,	,	PUNCT
2r36tx33k81	1	30	including	include	VERB
2r36tx33k81	1	31	radio	radio	NOUN
2r36tx33k81	1	32	-	-	PUNCT
2r36tx33k81	1	33	over	over	ADP
2r36tx33k81	1	34	-	-	PUNCT
2r36tx33k81	1	35	fiber	fiber	NOUN
2r36tx33k81	1	36	systems	system	NOUN
2r36tx33k81	1	37	,	,	PUNCT
2r36tx33k81	1	38	optical	optical	ADJ
2r36tx33k81	1	39	beam	beam	NOUN
2r36tx33k81	1	40	forming	form	VERB
2r36tx33k81	1	41	and	and	CCONJ
2r36tx33k81	1	42	optical	optical	ADJ
2r36tx33k81	1	43	signal	signal	NOUN
2r36tx33k81	1	44	processing	processing	NOUN
2r36tx33k81	1	45	.	.	PUNCT
2r36tx33k81	2	1	to	to	PART
2r36tx33k81	2	2	reduce	reduce	VERB
2r36tx33k81	2	3	insertion	insertion	NOUN
2r36tx33k81	2	4	loss	loss	NOUN
2r36tx33k81	2	5	and	and	CCONJ
2r36tx33k81	2	6	enhance	enhance	VERB
2r36tx33k81	2	7	dynamic	dynamic	ADJ
2r36tx33k81	2	8	range	range	NOUN
2r36tx33k81	2	9	in	in	ADP
2r36tx33k81	2	10	the	the	DET
2r36tx33k81	2	11	microwave	microwave	NOUN
2r36tx33k81	2	12	photonic	photonic	ADJ
2r36tx33k81	2	13	links	link	NOUN
2r36tx33k81	2	14	,	,	PUNCT
2r36tx33k81	2	15	it	it	PRON
2r36tx33k81	2	16	is	be	AUX
2r36tx33k81	2	17	crucial	crucial	ADJ
2r36tx33k81	2	18	to	to	PART
2r36tx33k81	2	19	implement	implement	VERB
2r36tx33k81	2	20	high	high	ADJ
2r36tx33k81	2	21	-	-	PUNCT
2r36tx33k81	2	22	power	power	NOUN
2r36tx33k81	2	23	and	and	CCONJ
2r36tx33k81	2	24	high	high	ADJ
2r36tx33k81	2	25	-	-	PUNCT
2r36tx33k81	2	26	linearity	linearity	NOUN
2r36tx33k81	2	27	photodiodes	photodiode	NOUN
2r36tx33k81	2	28	.	.	PUNCT
2r36tx33k81	3	1	a	a	DET
2r36tx33k81	3	2	promising	promising	ADJ
2r36tx33k81	3	3	candidate	candidate	NOUN
2r36tx33k81	3	4	for	for	ADP
2r36tx33k81	3	5	this	this	DET
2r36tx33k81	3	6	application	application	NOUN
2r36tx33k81	3	7	is	be	AUX
2r36tx33k81	3	8	the	the	DET
2r36tx33k81	3	9	uni	uni	ADJ
2r36tx33k81	3	10	-	-	PUNCT
2r36tx33k81	3	11	travelling	travel	VERB
2r36tx33k81	3	12	-	-	PUNCT
2r36tx33k81	3	13	carrier	carrier	NOUN
2r36tx33k81	3	14	photodiode	photodiode	NOUN
2r36tx33k81	3	15	(	(	PUNCT
2r36tx33k81	3	16	utc	utc	PROPN
2r36tx33k81	3	17	-	-	PUNCT
2r36tx33k81	3	18	pd	pd	PROPN
2r36tx33k81	3	19	)	)	PUNCT
2r36tx33k81	3	20	,	,	PUNCT
2r36tx33k81	3	21	which	which	PRON
2r36tx33k81	3	22	mitigates	mitigate	VERB
2r36tx33k81	3	23	the	the	DET
2r36tx33k81	3	24	space	space	NOUN
2r36tx33k81	3	25	charge	charge	NOUN
2r36tx33k81	3	26	effect	effect	NOUN
2r36tx33k81	3	27	by	by	ADP
2r36tx33k81	3	28	using	use	VERB
2r36tx33k81	3	29	electrons	electron	NOUN
2r36tx33k81	3	30	as	as	ADP
2r36tx33k81	3	31	the	the	DET
2r36tx33k81	3	32	only	only	ADJ
2r36tx33k81	3	33	active	active	ADJ
2r36tx33k81	3	34	carrier	carrier	NOUN
2r36tx33k81	3	35	,	,	PUNCT
2r36tx33k81	3	36	thereby	thereby	ADV
2r36tx33k81	3	37	increasing	increase	VERB
2r36tx33k81	3	38	the	the	DET
2r36tx33k81	3	39	saturation	saturation	NOUN
2r36tx33k81	3	40	current	current	ADJ
2r36tx33k81	3	41	.	.	PUNCT
2r36tx33k81	4	1	in	in	ADP
2r36tx33k81	4	2	this	this	DET
2r36tx33k81	4	3	work	work	NOUN
2r36tx33k81	4	4	,	,	PUNCT
2r36tx33k81	4	5	an	an	DET
2r36tx33k81	4	6	ingaas	ingaas	NOUN
2r36tx33k81	4	7	/	/	SYM
2r36tx33k81	4	8	inp	inp	NOUN
2r36tx33k81	4	9	modified	modify	VERB
2r36tx33k81	4	10	utc	utc	PROPN
2r36tx33k81	4	11	-	-	PUNCT
2r36tx33k81	4	12	pd	pd	PROPN
2r36tx33k81	4	13	(	(	PUNCT
2r36tx33k81	4	14	mutc	mutc	PROPN
2r36tx33k81	4	15	-	-	PUNCT
2r36tx33k81	4	16	pd	pd	PROPN
2r36tx33k81	4	17	)	)	PUNCT
2r36tx33k81	4	18	is	be	AUX
2r36tx33k81	4	19	simulated	simulate	VERB
2r36tx33k81	4	20	,	,	PUNCT
2r36tx33k81	4	21	fabricated	fabricate	VERB
2r36tx33k81	4	22	and	and	CCONJ
2r36tx33k81	4	23	characterized	characterize	VERB
2r36tx33k81	4	24	.	.	PUNCT
2r36tx33k81	5	1	the	the	DET
2r36tx33k81	5	2	mutc	mutc	PROPN
2r36tx33k81	5	3	-	-	PUNCT
2r36tx33k81	5	4	pd	pd	PROPN
2r36tx33k81	5	5	electrostatics	electrostatic	NOUN
2r36tx33k81	5	6	are	be	AUX
2r36tx33k81	5	7	first	first	ADV
2r36tx33k81	5	8	calculated	calculate	VERB
2r36tx33k81	5	9	using	use	VERB
2r36tx33k81	5	10	synopsys	synopsys	PROPN
2r36tx33k81	5	11	sentaurus	sentaurus	NOUN
2r36tx33k81	5	12	tcad	tcad	PROPN
2r36tx33k81	5	13	,	,	PUNCT
2r36tx33k81	5	14	which	which	PRON
2r36tx33k81	5	15	provides	provide	VERB
2r36tx33k81	5	16	insight	insight	NOUN
2r36tx33k81	5	17	and	and	CCONJ
2r36tx33k81	5	18	illustrates	illustrate	VERB
2r36tx33k81	5	19	the	the	DET
2r36tx33k81	5	20	device	device	NOUN
2r36tx33k81	5	21	saturation	saturation	NOUN
2r36tx33k81	5	22	mechanism	mechanism	NOUN
2r36tx33k81	5	23	(	(	PUNCT
2r36tx33k81	5	24	i.e.	i.e.	X
2r36tx33k81	5	25	space	space	NOUN
2r36tx33k81	5	26	charge	charge	NOUN
2r36tx33k81	5	27	effect	effect	NOUN
2r36tx33k81	5	28	)	)	PUNCT
2r36tx33k81	5	29	.	.	PUNCT
2r36tx33k81	6	1	it	it	PRON
2r36tx33k81	6	2	is	be	AUX
2r36tx33k81	6	3	also	also	ADV
2r36tx33k81	6	4	found	find	VERB
2r36tx33k81	6	5	that	that	SCONJ
2r36tx33k81	6	6	a	a	DET
2r36tx33k81	6	7	"	"	PUNCT
2r36tx33k81	6	8	cliff	cliff	NOUN
2r36tx33k81	6	9	layer	layer	NOUN
2r36tx33k81	6	10	"	"	PUNCT
2r36tx33k81	6	11	(	(	PUNCT
2r36tx33k81	6	12	e.g.	e.g.	X
2r36tx33k81	6	13	lightly	lightly	ADV
2r36tx33k81	6	14	-	-	PUNCT
2r36tx33k81	6	15	doped	dope	VERB
2r36tx33k81	6	16	inp	inp	NOUN
2r36tx33k81	6	17	layer	layer	NOUN
2r36tx33k81	6	18	inserted	insert	VERB
2r36tx33k81	6	19	between	between	ADP
2r36tx33k81	6	20	the	the	DET
2r36tx33k81	6	21	absorption	absorption	NOUN
2r36tx33k81	6	22	and	and	CCONJ
2r36tx33k81	6	23	collection	collection	NOUN
2r36tx33k81	6	24	layer	layer	NOUN
2r36tx33k81	6	25	)	)	PUNCT
2r36tx33k81	6	26	helps	help	VERB
2r36tx33k81	6	27	suppress	suppress	VERB
2r36tx33k81	6	28	the	the	DET
2r36tx33k81	6	29	space	space	NOUN
2r36tx33k81	6	30	charge	charge	NOUN
2r36tx33k81	6	31	effect	effect	NOUN
2r36tx33k81	6	32	under	under	ADP
2r36tx33k81	6	33	high	high	ADJ
2r36tx33k81	6	34	-	-	PUNCT
2r36tx33k81	6	35	illumination	illumination	NOUN
2r36tx33k81	6	36	conditions	condition	NOUN
2r36tx33k81	6	37	and	and	CCONJ
2r36tx33k81	6	38	improves	improve	VERB
2r36tx33k81	6	39	the	the	DET
2r36tx33k81	6	40	device	device	NOUN
2r36tx33k81	6	41	high	high	ADJ
2r36tx33k81	6	42	power	power	NOUN
2r36tx33k81	6	43	handling	handling	NOUN
2r36tx33k81	6	44	capability	capability	NOUN
2r36tx33k81	6	45	.	.	PUNCT
2r36tx33k81	7	1	an	an	DET
2r36tx33k81	7	2	ingaas	ingaas	NOUN
2r36tx33k81	7	3	/	/	SYM
2r36tx33k81	7	4	inp	inp	NOUN
2r36tx33k81	7	5	mutc	mutc	PROPN
2r36tx33k81	7	6	-	-	PUNCT
2r36tx33k81	7	7	pd	pd	PROPN
2r36tx33k81	7	8	epitaxial	epitaxial	ADJ
2r36tx33k81	7	9	structure	structure	NOUN
2r36tx33k81	7	10	grown	grow	VERB
2r36tx33k81	7	11	by	by	ADP
2r36tx33k81	7	12	mocvd	mocvd	PROPN
2r36tx33k81	7	13	has	have	AUX
2r36tx33k81	7	14	also	also	ADV
2r36tx33k81	7	15	been	be	AUX
2r36tx33k81	7	16	processed	process	VERB
2r36tx33k81	7	17	into	into	ADP
2r36tx33k81	7	18	a	a	DET
2r36tx33k81	7	19	frontside	frontside	NOUN
2r36tx33k81	7	20	-	-	PUNCT
2r36tx33k81	7	21	illuminated	illuminate	VERB
2r36tx33k81	7	22	photodiode	photodiode	NOUN
2r36tx33k81	7	23	by	by	ADP
2r36tx33k81	7	24	using	use	VERB
2r36tx33k81	7	25	optical	optical	ADJ
2r36tx33k81	7	26	lithography	lithography	NOUN
2r36tx33k81	7	27	,	,	PUNCT
2r36tx33k81	7	28	wet	wet	ADJ
2r36tx33k81	7	29	and	and	CCONJ
2r36tx33k81	7	30	dry	dry	ADJ
2r36tx33k81	7	31	etch	etch	NOUN
2r36tx33k81	7	32	processes	process	NOUN
2r36tx33k81	7	33	,	,	PUNCT
2r36tx33k81	7	34	dielectric	dielectric	ADJ
2r36tx33k81	7	35	planarization	planarization	NOUN
2r36tx33k81	7	36	and	and	CCONJ
2r36tx33k81	7	37	metallization	metallization	NOUN
2r36tx33k81	7	38	.	.	PUNCT
2r36tx33k81	8	1	the	the	DET
2r36tx33k81	8	2	performance	performance	NOUN
2r36tx33k81	8	3	of	of	ADP
2r36tx33k81	8	4	these	these	DET
2r36tx33k81	8	5	fabricated	fabricate	VERB
2r36tx33k81	8	6	photodiodes	photodiode	NOUN
2r36tx33k81	8	7	were	be	AUX
2r36tx33k81	8	8	evaluated	evaluate	VERB
2r36tx33k81	8	9	by	by	ADP
2r36tx33k81	8	10	measuring	measure	VERB
2r36tx33k81	8	11	dark	dark	ADJ
2r36tx33k81	8	12	current	current	ADJ
2r36tx33k81	8	13	,	,	PUNCT
2r36tx33k81	8	14	responsivity	responsivity	NOUN
2r36tx33k81	8	15	and	and	CCONJ
2r36tx33k81	8	16	bandwidth	bandwidth	ADJ
2r36tx33k81	8	17	.	.	PUNCT
2r36tx33k81	9	1	finally	finally	ADV
2r36tx33k81	9	2	,	,	PUNCT
2r36tx33k81	9	3	the	the	DET
2r36tx33k81	9	4	device	device	NOUN
2r36tx33k81	9	5	's	's	PART
2r36tx33k81	9	6	thermal	thermal	ADJ
2r36tx33k81	9	7	behavior	behavior	NOUN
2r36tx33k81	9	8	has	have	AUX
2r36tx33k81	9	9	been	be	AUX
2r36tx33k81	9	10	explored	explore	VERB
2r36tx33k81	9	11	by	by	ADP
2r36tx33k81	9	12	way	way	NOUN
2r36tx33k81	9	13	of	of	ADP
2r36tx33k81	9	14	matlab	matlab	NOUN
2r36tx33k81	9	15	simulation	simulation	NOUN
2r36tx33k81	9	16	.	.	PUNCT
2r36tx33k81	10	1	since	since	SCONJ
2r36tx33k81	10	2	thermal	thermal	ADJ
2r36tx33k81	10	3	heating	heating	NOUN
2r36tx33k81	10	4	limits	limit	VERB
2r36tx33k81	10	5	the	the	DET
2r36tx33k81	10	6	photodiode	photodiode	NOUN
2r36tx33k81	10	7	ultimate	ultimate	ADJ
2r36tx33k81	10	8	high	high	ADJ
2r36tx33k81	10	9	-	-	PUNCT
2r36tx33k81	10	10	power	power	NOUN
2r36tx33k81	10	11	performance	performance	NOUN
2r36tx33k81	10	12	,	,	PUNCT
2r36tx33k81	10	13	different	different	ADJ
2r36tx33k81	10	14	thermal	thermal	ADJ
2r36tx33k81	10	15	management	management	NOUN
2r36tx33k81	10	16	strategies	strategy	NOUN
2r36tx33k81	10	17	,	,	PUNCT
2r36tx33k81	10	18	like	like	ADP
2r36tx33k81	10	19	wafer	wafer	NOUN
2r36tx33k81	10	20	transfer	transfer	NOUN
2r36tx33k81	10	21	and	and	CCONJ
2r36tx33k81	10	22	heat	heat	NOUN
2r36tx33k81	10	23	sink	sink	NOUN
2r36tx33k81	10	24	,	,	PUNCT
2r36tx33k81	10	25	have	have	AUX
2r36tx33k81	10	26	been	be	AUX
2r36tx33k81	10	27	simulated	simulate	VERB
2r36tx33k81	10	28	and	and	CCONJ
2r36tx33k81	10	29	are	be	AUX
2r36tx33k81	10	30	compared	compare	VERB
2r36tx33k81	10	31	.	.	PUNCT