id	sid	tid	token	lemma	pos
6d56zw14x3b	1	1	the	the	DET
6d56zw14x3b	1	2	wet	wet	ADJ
6d56zw14x3b	1	3	thermal	thermal	ADJ
6d56zw14x3b	1	4	oxides	oxide	NOUN
6d56zw14x3b	1	5	of	of	ADP
6d56zw14x3b	1	6	inalp	inalp	NOUN
6d56zw14x3b	1	7	have	have	AUX
6d56zw14x3b	1	8	been	be	AUX
6d56zw14x3b	1	9	carefully	carefully	ADV
6d56zw14x3b	1	10	studied	study	VERB
6d56zw14x3b	1	11	to	to	PART
6d56zw14x3b	1	12	explore	explore	VERB
6d56zw14x3b	1	13	the	the	DET
6d56zw14x3b	1	14	potential	potential	NOUN
6d56zw14x3b	1	15	of	of	ADP
6d56zw14x3b	1	16	such	such	ADJ
6d56zw14x3b	1	17	films	film	NOUN
6d56zw14x3b	1	18	for	for	ADP
6d56zw14x3b	1	19	use	use	NOUN
6d56zw14x3b	1	20	as	as	ADP
6d56zw14x3b	1	21	a	a	DET
6d56zw14x3b	1	22	gate	gate	NOUN
6d56zw14x3b	1	23	dielectric	dielectric	NOUN
6d56zw14x3b	1	24	in	in	ADP
6d56zw14x3b	1	25	gaas	gaas	NOUN
6d56zw14x3b	1	26	metal	metal	NOUN
6d56zw14x3b	1	27	-	-	PUNCT
6d56zw14x3b	1	28	oxide	oxide	NOUN
6d56zw14x3b	1	29	-	-	PUNCT
6d56zw14x3b	1	30	semiconductor	semiconductor	NOUN
6d56zw14x3b	1	31	(	(	PUNCT
6d56zw14x3b	1	32	mos	mos	PROPN
6d56zw14x3b	1	33	)	)	PUNCT
6d56zw14x3b	1	34	device	device	NOUN
6d56zw14x3b	1	35	applications	application	NOUN
6d56zw14x3b	1	36	.	.	PUNCT
6d56zw14x3b	2	1	the	the	DET
6d56zw14x3b	2	2	kinetics	kinetic	NOUN
6d56zw14x3b	2	3	of	of	ADP
6d56zw14x3b	2	4	wet	wet	ADJ
6d56zw14x3b	2	5	thermal	thermal	ADJ
6d56zw14x3b	2	6	oxidation	oxidation	NOUN
6d56zw14x3b	2	7	of	of	ADP
6d56zw14x3b	2	8	inalp	inalp	PRON
6d56zw14x3b	2	9	epitaxial	epitaxial	ADJ
6d56zw14x3b	2	10	layers	layer	NOUN
6d56zw14x3b	2	11	lattice	lattice	NOUN
6d56zw14x3b	2	12	-	-	PUNCT
6d56zw14x3b	2	13	matched	match	VERB
6d56zw14x3b	2	14	to	to	ADP
6d56zw14x3b	2	15	gaas	gaas	NOUN
6d56zw14x3b	2	16	and	and	CCONJ
6d56zw14x3b	2	17	the	the	DET
6d56zw14x3b	2	18	electrical	electrical	ADJ
6d56zw14x3b	2	19	properties	property	NOUN
6d56zw14x3b	2	20	of	of	ADP
6d56zw14x3b	2	21	the	the	DET
6d56zw14x3b	2	22	resulting	result	VERB
6d56zw14x3b	2	23	inalp	inalp	VERB
6d56zw14x3b	2	24	wet	wet	ADJ
6d56zw14x3b	2	25	thermal	thermal	ADJ
6d56zw14x3b	2	26	oxides	oxide	NOUN
6d56zw14x3b	2	27	when	when	SCONJ
6d56zw14x3b	2	28	scaled	scale	VERB
6d56zw14x3b	2	29	to	to	ADP
6d56zw14x3b	2	30	reduced	reduce	VERB
6d56zw14x3b	2	31	thicknesses	thickness	NOUN
6d56zw14x3b	2	32	have	have	AUX
6d56zw14x3b	2	33	been	be	AUX
6d56zw14x3b	2	34	investigated	investigate	VERB
6d56zw14x3b	2	35	.	.	PUNCT
6d56zw14x3b	3	1	also	also	ADV
6d56zw14x3b	3	2	presented	present	VERB
6d56zw14x3b	3	3	are	be	AUX
6d56zw14x3b	3	4	results	result	NOUN
6d56zw14x3b	3	5	of	of	ADP
6d56zw14x3b	3	6	investigations	investigation	NOUN
6d56zw14x3b	3	7	of	of	ADP
6d56zw14x3b	3	8	the	the	DET
6d56zw14x3b	3	9	dry	dry	ADJ
6d56zw14x3b	3	10	thermal	thermal	ADJ
6d56zw14x3b	3	11	oxidation	oxidation	NOUN
6d56zw14x3b	3	12	of	of	ADP
6d56zw14x3b	3	13	inalp	inalp	PROPN
6d56zw14x3b	3	14	epilayers	epilayer	NOUN
6d56zw14x3b	3	15	and	and	CCONJ
6d56zw14x3b	3	16	the	the	DET
6d56zw14x3b	3	17	electrical	electrical	ADJ
6d56zw14x3b	3	18	properties	property	NOUN
6d56zw14x3b	3	19	of	of	ADP
6d56zw14x3b	3	20	the	the	DET
6d56zw14x3b	3	21	resulting	result	VERB
6d56zw14x3b	3	22	dry	dry	ADJ
6d56zw14x3b	3	23	oxide	oxide	NOUN
6d56zw14x3b	3	24	films	film	NOUN
6d56zw14x3b	3	25	.	.	PUNCT
6d56zw14x3b	4	1	gaas	gaas	NOUN
6d56zw14x3b	4	2	-	-	PUNCT
6d56zw14x3b	4	3	based	base	VERB
6d56zw14x3b	4	4	metaloxidesemiconductor	metaloxidesemiconductor	NOUN
6d56zw14x3b	4	5	field	field	NOUN
6d56zw14x3b	4	6	-	-	PUNCT
6d56zw14x3b	4	7	effect	effect	NOUN
6d56zw14x3b	4	8	transistor	transistor	NOUN
6d56zw14x3b	4	9	(	(	PUNCT
6d56zw14x3b	4	10	mosfet	mosfet	NOUN
6d56zw14x3b	4	11	)	)	PUNCT
6d56zw14x3b	4	12	devices	device	NOUN
6d56zw14x3b	4	13	with	with	ADP
6d56zw14x3b	4	14	inalp	inalp	PROPN
6d56zw14x3b	4	15	wet	wet	ADJ
6d56zw14x3b	4	16	oxides	oxide	NOUN
6d56zw14x3b	4	17	as	as	SCONJ
6d56zw14x3b	4	18	the	the	DET
6d56zw14x3b	4	19	gate	gate	NOUN
6d56zw14x3b	4	20	insulator	insulator	NOUN
6d56zw14x3b	4	21	have	have	AUX
6d56zw14x3b	4	22	been	be	AUX
6d56zw14x3b	4	23	fabricated	fabricate	VERB
6d56zw14x3b	4	24	and	and	CCONJ
6d56zw14x3b	4	25	characterized	characterize	VERB
6d56zw14x3b	4	26	on	on	ADP
6d56zw14x3b	4	27	two	two	NUM
6d56zw14x3b	4	28	heterostructures	heterostructure	NOUN
6d56zw14x3b	4	29	.	.	PUNCT
6d56zw14x3b	5	1	mosfets	mosfet	NOUN
6d56zw14x3b	5	2	having	have	VERB
6d56zw14x3b	5	3	a	a	DET
6d56zw14x3b	5	4	1	1	NUM
6d56zw14x3b	5	5	å_ìîm	å_ìîm	PROPN
6d56zw14x3b	5	6	gate	gate	NOUN
6d56zw14x3b	5	7	length	length	NOUN
6d56zw14x3b	5	8	exhibit	exhibit	VERB
6d56zw14x3b	5	9	excellent	excellent	ADJ
6d56zw14x3b	5	10	microwave	microwave	NOUN
6d56zw14x3b	5	11	performance	performance	NOUN
6d56zw14x3b	5	12	with	with	ADP
6d56zw14x3b	5	13	a	a	DET
6d56zw14x3b	5	14	current	current	ADJ
6d56zw14x3b	5	15	gain	gain	NOUN
6d56zw14x3b	5	16	cutoff	cutoff	NOUN
6d56zw14x3b	5	17	frequency	frequency	NOUN
6d56zw14x3b	5	18	of	of	ADP
6d56zw14x3b	5	19	17.0	17.0	NUM
6d56zw14x3b	5	20	ghz	ghz	NOUN
6d56zw14x3b	5	21	and	and	CCONJ
6d56zw14x3b	5	22	a	a	DET
6d56zw14x3b	5	23	maximum	maximum	ADJ
6d56zw14x3b	5	24	frequency	frequency	NOUN
6d56zw14x3b	5	25	of	of	ADP
6d56zw14x3b	5	26	oscillation	oscillation	NOUN
6d56zw14x3b	5	27	of	of	ADP
6d56zw14x3b	5	28	74.8	74.8	NUM
6d56zw14x3b	5	29	ghz	ghz	NOUN
6d56zw14x3b	5	30	on	on	ADP
6d56zw14x3b	5	31	a	a	DET
6d56zw14x3b	5	32	device	device	NOUN
6d56zw14x3b	5	33	heterostructure	heterostructure	NOUN
6d56zw14x3b	5	34	with	with	ADP
6d56zw14x3b	5	35	a	a	DET
6d56zw14x3b	5	36	7.5	7.5	NUM
6d56zw14x3b	5	37	nm	nm	NOUN
6d56zw14x3b	5	38	thick	thick	ADJ
6d56zw14x3b	5	39	gate	gate	NOUN
6d56zw14x3b	5	40	oxide	oxide	NOUN
6d56zw14x3b	5	41	layer	layer	NOUN
6d56zw14x3b	5	42	.	.	PUNCT