id	sid	tid	token	lemma	pos
cn69m328p8x	1	1	iii	iii	PROPN
cn69m328p8x	1	2	-	-	PUNCT
cn69m328p8x	1	3	v	v	NOUN
cn69m328p8x	1	4	nitride	nitride	PROPN
cn69m328p8x	1	5	semiconductors	semiconductor	NOUN
cn69m328p8x	1	6	have	have	AUX
cn69m328p8x	1	7	attracted	attract	VERB
cn69m328p8x	1	8	a	a	DET
cn69m328p8x	1	9	lot	lot	NOUN
cn69m328p8x	1	10	of	of	ADP
cn69m328p8x	1	11	interest	interest	NOUN
cn69m328p8x	1	12	for	for	ADP
cn69m328p8x	1	13	their	their	PRON
cn69m328p8x	1	14	applications	application	NOUN
cn69m328p8x	1	15	in	in	ADP
cn69m328p8x	1	16	optoelectronic	optoelectronic	ADJ
cn69m328p8x	1	17	and	and	CCONJ
cn69m328p8x	1	18	high	high	ADJ
cn69m328p8x	1	19	power	power	NOUN
cn69m328p8x	1	20	devices	device	NOUN
cn69m328p8x	1	21	.	.	PUNCT
cn69m328p8x	2	1	however	however	ADV
cn69m328p8x	2	2	the	the	DET
cn69m328p8x	2	3	highly	highly	ADV
cn69m328p8x	2	4	resistive	resistive	ADJ
cn69m328p8x	2	5	p	p	NOUN
cn69m328p8x	2	6	-	-	PUNCT
cn69m328p8x	2	7	type	type	NOUN
cn69m328p8x	2	8	layers	layer	NOUN
cn69m328p8x	2	9	of	of	ADP
cn69m328p8x	2	10	nitrides	nitride	NOUN
cn69m328p8x	2	11	have	have	AUX
cn69m328p8x	2	12	limited	limit	VERB
cn69m328p8x	2	13	the	the	DET
cn69m328p8x	2	14	performance	performance	NOUN
cn69m328p8x	2	15	of	of	ADP
cn69m328p8x	2	16	bipolar	bipolar	ADJ
cn69m328p8x	2	17	devices	device	NOUN
cn69m328p8x	2	18	.	.	PUNCT
cn69m328p8x	3	1	polarization	polarization	NOUN
cn69m328p8x	3	2	charges	charge	NOUN
cn69m328p8x	3	3	present	present	ADJ
cn69m328p8x	3	4	in	in	ADP
cn69m328p8x	3	5	nitride	nitride	NOUN
cn69m328p8x	3	6	heterojunctions	heterojunction	NOUN
cn69m328p8x	3	7	can	can	AUX
cn69m328p8x	3	8	be	be	AUX
cn69m328p8x	3	9	engineered	engineer	VERB
cn69m328p8x	3	10	to	to	PART
cn69m328p8x	3	11	enhance	enhance	VERB
cn69m328p8x	3	12	theperformance	theperformance	NOUN
cn69m328p8x	3	13	of	of	ADP
cn69m328p8x	3	14	different	different	ADJ
cn69m328p8x	3	15	devices	device	NOUN
cn69m328p8x	3	16	and	and	CCONJ
cn69m328p8x	3	17	introduce	introduce	VERB
cn69m328p8x	3	18	novel	novel	ADJ
cn69m328p8x	3	19	material	material	NOUN
cn69m328p8x	3	20	physics	physics	NOUN
cn69m328p8x	3	21	not	not	PART
cn69m328p8x	3	22	present	present	ADJ
cn69m328p8x	3	23	in	in	ADP
cn69m328p8x	3	24	other	other	ADJ
cn69m328p8x	3	25	semiconductors.regions	semiconductors.region	NOUN
cn69m328p8x	3	26	of	of	ADP
cn69m328p8x	3	27	2and	2and	NUM
cn69m328p8x	3	28	3	3	NUM
cn69m328p8x	3	29	-	-	PUNCT
cn69m328p8x	3	30	dimensional	dimensional	ADJ
cn69m328p8x	3	31	mobile	mobile	ADJ
cn69m328p8x	3	32	carriers	carrier	NOUN
cn69m328p8x	3	33	can	can	AUX
cn69m328p8x	3	34	be	be	AUX
cn69m328p8x	3	35	produced	produce	VERB
cn69m328p8x	3	36	with	with	ADP
cn69m328p8x	3	37	the	the	DET
cn69m328p8x	3	38	aid	aid	NOUN
cn69m328p8x	3	39	of	of	ADP
cn69m328p8x	3	40	polarization	polarization	NOUN
cn69m328p8x	3	41	charges	charge	NOUN
cn69m328p8x	3	42	in	in	ADP
cn69m328p8x	3	43	graded	grade	VERB
cn69m328p8x	3	44	algan	algan	PROPN
cn69m328p8x	3	45	structures	structure	NOUN
cn69m328p8x	3	46	.	.	PUNCT
cn69m328p8x	4	1	such	such	ADJ
cn69m328p8x	4	2	impurity	impurity	NOUN
cn69m328p8x	4	3	-	-	PUNCT
cn69m328p8x	4	4	free	free	ADJ
cn69m328p8x	4	5	electron	electron	NOUN
cn69m328p8x	4	6	concentrations	concentration	NOUN
cn69m328p8x	4	7	have	have	AUX
cn69m328p8x	4	8	been	be	AUX
cn69m328p8x	4	9	demonstrated	demonstrate	VERB
cn69m328p8x	4	10	experimentally	experimentally	ADV
cn69m328p8x	4	11	.	.	PUNCT
cn69m328p8x	5	1	polarization	polarization	NOUN
cn69m328p8x	5	2	-	-	PUNCT
cn69m328p8x	5	3	enhancedhole	enhancedhole	NOUN
cn69m328p8x	5	4	concentrations	concentration	NOUN
cn69m328p8x	5	5	are	be	AUX
cn69m328p8x	5	6	theoretically	theoretically	ADV
cn69m328p8x	5	7	and	and	CCONJ
cn69m328p8x	5	8	experimentally	experimentally	ADV
cn69m328p8x	5	9	studied	study	VERB
cn69m328p8x	5	10	in	in	ADP
cn69m328p8x	5	11	this	this	DET
cn69m328p8x	5	12	work	work	NOUN
cn69m328p8x	5	13	.	.	PUNCT
cn69m328p8x	6	1	bandgap	bandgap	NOUN
cn69m328p8x	6	2	engineering	engineering	NOUN
cn69m328p8x	6	3	of	of	ADP
cn69m328p8x	6	4	polarization	polarization	NOUN
cn69m328p8x	6	5	-	-	PUNCT
cn69m328p8x	6	6	induced	induce	VERB
cn69m328p8x	6	7	doping	doping	NOUN
cn69m328p8x	6	8	in	in	ADP
cn69m328p8x	6	9	iii	iii	NUM
cn69m328p8x	6	10	-	-	PUNCT
cn69m328p8x	6	11	v	v	NOUN
cn69m328p8x	6	12	nitrides	nitride	NOUN
cn69m328p8x	6	13	is	be	AUX
cn69m328p8x	6	14	demonstrated	demonstrate	VERB
cn69m328p8x	6	15	by	by	ADP
cn69m328p8x	6	16	molecular	molecular	ADJ
cn69m328p8x	6	17	beam	beam	NOUN
cn69m328p8x	6	18	epitaxy	epitaxy	PROPN
cn69m328p8x	6	19	.	.	PUNCT
cn69m328p8x	7	1	applications	application	NOUN
cn69m328p8x	7	2	of	of	ADP
cn69m328p8x	7	3	these	these	DET
cn69m328p8x	7	4	polarization	polarization	NOUN
cn69m328p8x	7	5	-	-	PUNCT
cn69m328p8x	7	6	enhanced	enhance	VERB
cn69m328p8x	7	7	layers	layer	NOUN
cn69m328p8x	7	8	in	in	ADP
cn69m328p8x	7	9	working	work	VERB
cn69m328p8x	7	10	p	p	PROPN
cn69m328p8x	7	11	-	-	PUNCT
cn69m328p8x	7	12	n	n	NOUN
cn69m328p8x	7	13	junction	junction	NOUN
cn69m328p8x	7	14	diodes	diode	NOUN
cn69m328p8x	7	15	is	be	AUX
cn69m328p8x	7	16	achieved.polarization	achieved.polarization	NOUN
cn69m328p8x	7	17	charges	charge	NOUN
cn69m328p8x	7	18	can	can	AUX
cn69m328p8x	7	19	also	also	ADV
cn69m328p8x	7	20	utilized	utilize	VERB
cn69m328p8x	7	21	to	to	PART
cn69m328p8x	7	22	enhanced	enhance	VERB
cn69m328p8x	7	23	the	the	DET
cn69m328p8x	7	24	properties	property	NOUN
cn69m328p8x	7	25	of	of	ADP
cn69m328p8x	7	26	other	other	ADJ
cn69m328p8x	7	27	devices	device	NOUN
cn69m328p8x	7	28	.	.	PUNCT
cn69m328p8x	8	1	p	p	X
cn69m328p8x	8	2	-	-	PUNCT
cn69m328p8x	8	3	type	type	NOUN
cn69m328p8x	8	4	conductivity	conductivity	NOUN
cn69m328p8x	8	5	in	in	ADP
cn69m328p8x	8	6	aln	aln	PROPN
cn69m328p8x	8	7	/	/	SYM
cn69m328p8x	8	8	gan	gan	PROPN
cn69m328p8x	8	9	superlattice	superlattice	NOUN
cn69m328p8x	8	10	structures	structure	NOUN
cn69m328p8x	8	11	is	be	AUX
cn69m328p8x	8	12	increased	increase	VERB
cn69m328p8x	8	13	due	due	ADP
cn69m328p8x	8	14	to	to	ADP
cn69m328p8x	8	15	field	field	NOUN
cn69m328p8x	8	16	-	-	PUNCT
cn69m328p8x	8	17	assisted	assist	VERB
cn69m328p8x	8	18	acceptor	acceptor	NOUN
cn69m328p8x	8	19	ionization	ionization	NOUN
cn69m328p8x	8	20	.	.	PUNCT
cn69m328p8x	9	1	improved	improve	VERB
cn69m328p8x	9	2	p	p	NOUN
cn69m328p8x	9	3	-	-	PUNCT
cn69m328p8x	9	4	type	type	NOUN
cn69m328p8x	9	5	conductivity	conductivity	NOUN
cn69m328p8x	9	6	as	as	SCONJ
cn69m328p8x	9	7	compared	compare	VERB
cn69m328p8x	9	8	to	to	ADP
cn69m328p8x	9	9	conventional	conventional	ADJ
cn69m328p8x	9	10	bulk	bulk	ADJ
cn69m328p8x	9	11	doped	doped	NOUN
cn69m328p8x	9	12	gan	gan	PROPN
cn69m328p8x	9	13	structures	structure	NOUN
cn69m328p8x	9	14	is	be	AUX
cn69m328p8x	9	15	achieved	achieve	VERB
cn69m328p8x	9	16	,	,	PUNCT
cn69m328p8x	9	17	and	and	CCONJ
cn69m328p8x	9	18	insertion	insertion	NOUN
cn69m328p8x	9	19	into	into	ADP
cn69m328p8x	9	20	a	a	DET
cn69m328p8x	9	21	p	p	NOUN
cn69m328p8x	9	22	-	-	PUNCT
cn69m328p8x	9	23	njunction	njunction	NOUN
cn69m328p8x	9	24	allows	allow	VERB
cn69m328p8x	9	25	vertical	vertical	ADJ
cn69m328p8x	9	26	conductivity.demonstration	conductivity.demonstration	NOUN
cn69m328p8x	9	27	of	of	ADP
cn69m328p8x	9	28	the	the	DET
cn69m328p8x	9	29	nitride	nitride	NOUN
cn69m328p8x	9	30	-	-	PUNCT
cn69m328p8x	9	31	based	base	VERB
cn69m328p8x	9	32	backward	backward	ADJ
cn69m328p8x	9	33	diodes	diode	NOUN
cn69m328p8x	9	34	is	be	AUX
cn69m328p8x	9	35	also	also	ADV
cn69m328p8x	9	36	achieved	achieve	VERB
cn69m328p8x	9	37	by	by	ADP
cn69m328p8x	9	38	utilizing	utilize	VERB
cn69m328p8x	9	39	the	the	DET
cn69m328p8x	9	40	high	high	ADJ
cn69m328p8x	9	41	polarization	polarization	NOUN
cn69m328p8x	9	42	-	-	PUNCT
cn69m328p8x	9	43	induced	induce	VERB
cn69m328p8x	9	44	electric	electric	ADJ
cn69m328p8x	9	45	fields	field	NOUN
cn69m328p8x	9	46	.	.	PUNCT
cn69m328p8x	10	1	interband	interband	PROPN
cn69m328p8x	10	2	tunneling	tunneling	PROPN
cn69m328p8x	10	3	current	current	NOUN
cn69m328p8x	10	4	is	be	AUX
cn69m328p8x	10	5	observed	observe	VERB
cn69m328p8x	10	6	in	in	ADP
cn69m328p8x	10	7	gan	gan	PROPN
cn69m328p8x	10	8	-	-	PUNCT
cn69m328p8x	10	9	aln	aln	ADV
cn69m328p8x	10	10	-	-	PUNCT
cn69m328p8x	10	11	gan	gan	ADJ
cn69m328p8x	10	12	p	p	PROPN
cn69m328p8x	10	13	-	-	PUNCT
cn69m328p8x	10	14	n	n	NOUN
cn69m328p8x	10	15	junctions	junction	NOUN
cn69m328p8x	10	16	under	under	ADP
cn69m328p8x	10	17	reverse	reverse	ADJ
cn69m328p8x	10	18	bias	bias	NOUN
cn69m328p8x	10	19	.	.	PUNCT
cn69m328p8x	11	1	application	application	NOUN
cn69m328p8x	11	2	of	of	ADP
cn69m328p8x	11	3	thesebackward	thesebackward	ADJ
cn69m328p8x	11	4	diodes	diode	NOUN
cn69m328p8x	11	5	as	as	ADP
cn69m328p8x	11	6	a	a	DET
cn69m328p8x	11	7	zero	zero	NUM
cn69m328p8x	11	8	bias	bias	NOUN
cn69m328p8x	11	9	rf	rf	NOUN
cn69m328p8x	11	10	detector	detector	NOUN
cn69m328p8x	11	11	is	be	AUX
cn69m328p8x	11	12	demonstrated	demonstrate	VERB
cn69m328p8x	11	13	.	.	PUNCT