id	sid	tid	token	lemma	pos
h702q526t7x	1	1	iii	iii	PROPN
h702q526t7x	1	2	-	-	PUNCT
h702q526t7x	1	3	nitride	nitride	NOUN
h702q526t7x	1	4	semiconductors	semiconductor	NOUN
h702q526t7x	1	5	have	have	AUX
h702q526t7x	1	6	been	be	AUX
h702q526t7x	1	7	of	of	ADP
h702q526t7x	1	8	great	great	ADJ
h702q526t7x	1	9	interest	interest	NOUN
h702q526t7x	1	10	and	and	CCONJ
h702q526t7x	1	11	have	have	AUX
h702q526t7x	1	12	been	be	AUX
h702q526t7x	1	13	studied	study	VERB
h702q526t7x	1	14	extensively	extensively	ADV
h702q526t7x	1	15	for	for	ADP
h702q526t7x	1	16	the	the	DET
h702q526t7x	1	17	applications	application	NOUN
h702q526t7x	1	18	in	in	ADP
h702q526t7x	1	19	high	high	ADJ
h702q526t7x	1	20	frequency	frequency	NOUN
h702q526t7x	1	21	and	and	CCONJ
h702q526t7x	1	22	high	high	ADJ
h702q526t7x	1	23	power	power	NOUN
h702q526t7x	1	24	devices	device	NOUN
h702q526t7x	1	25	.	.	PUNCT
h702q526t7x	2	1	so	so	ADV
h702q526t7x	2	2	far	far	ADV
h702q526t7x	2	3	,	,	PUNCT
h702q526t7x	2	4	most	most	ADJ
h702q526t7x	2	5	iii	iii	NUM
h702q526t7x	2	6	-	-	PUNCT
h702q526t7x	2	7	nitride	nitride	NOUN
h702q526t7x	2	8	devices	device	NOUN
h702q526t7x	2	9	are	be	AUX
h702q526t7x	2	10	grown	grow	VERB
h702q526t7x	2	11	and	and	CCONJ
h702q526t7x	2	12	fabricated	fabricate	VERB
h702q526t7x	2	13	on	on	ADP
h702q526t7x	2	14	sapphire	sapphire	NOUN
h702q526t7x	2	15	,	,	PUNCT
h702q526t7x	2	16	sic	sic	PROPN
h702q526t7x	2	17	,	,	PUNCT
h702q526t7x	2	18	si	si	X
h702q526t7x	2	19	and	and	CCONJ
h702q526t7x	2	20	other	other	ADJ
h702q526t7x	2	21	substrates	substrate	NOUN
h702q526t7x	2	22	.	.	PUNCT
h702q526t7x	3	1	the	the	DET
h702q526t7x	3	2	epitaxially	epitaxially	ADV
h702q526t7x	3	3	grown	grown	ADJ
h702q526t7x	3	4	materials	material	NOUN
h702q526t7x	3	5	on	on	ADP
h702q526t7x	3	6	these	these	DET
h702q526t7x	3	7	substrates	substrate	NOUN
h702q526t7x	3	8	suffer	suffer	VERB
h702q526t7x	3	9	from	from	ADP
h702q526t7x	3	10	high	high	ADJ
h702q526t7x	3	11	defect	defect	NOUN
h702q526t7x	3	12	densities	density	NOUN
h702q526t7x	3	13	due	due	ADP
h702q526t7x	3	14	to	to	ADP
h702q526t7x	3	15	the	the	DET
h702q526t7x	3	16	lattice	lattice	NOUN
h702q526t7x	3	17	mismatch	mismatch	NOUN
h702q526t7x	3	18	.	.	PUNCT
h702q526t7x	4	1	dislocations	dislocation	NOUN
h702q526t7x	4	2	and	and	CCONJ
h702q526t7x	4	3	other	other	ADJ
h702q526t7x	4	4	defects	defect	NOUN
h702q526t7x	4	5	degrade	degrade	NOUN
h702q526t7x	4	6	performance	performance	NOUN
h702q526t7x	4	7	,	,	PUNCT
h702q526t7x	4	8	especially	especially	ADV
h702q526t7x	4	9	for	for	ADP
h702q526t7x	4	10	devices	device	NOUN
h702q526t7x	4	11	utilizing	utilize	VERB
h702q526t7x	4	12	a	a	DET
h702q526t7x	4	13	vertical	vertical	ADJ
h702q526t7x	4	14	current	current	ADJ
h702q526t7x	4	15	path	path	NOUN
h702q526t7x	4	16	.	.	PUNCT
h702q526t7x	5	1	recently	recently	ADV
h702q526t7x	5	2	single	single	ADJ
h702q526t7x	5	3	-	-	PUNCT
h702q526t7x	5	4	crystal	crystal	NOUN
h702q526t7x	5	5	bulk	bulk	PROPN
h702q526t7x	5	6	gallium	gallium	PROPN
h702q526t7x	5	7	nitride	nitride	PROPN
h702q526t7x	5	8	(	(	PUNCT
h702q526t7x	5	9	gan	gan	PROPN
h702q526t7x	5	10	)	)	PUNCT
h702q526t7x	5	11	and	and	CCONJ
h702q526t7x	5	12	aluminum	aluminum	NOUN
h702q526t7x	5	13	nitride	nitride	NOUN
h702q526t7x	5	14	(	(	PUNCT
h702q526t7x	5	15	aln	aln	PROPN
h702q526t7x	5	16	)	)	PUNCT
h702q526t7x	5	17	substrates	substrate	NOUN
h702q526t7x	5	18	with	with	ADP
h702q526t7x	5	19	very	very	ADV
h702q526t7x	5	20	low	low	ADJ
h702q526t7x	5	21	defect	defect	NOUN
h702q526t7x	5	22	densities	density	NOUN
h702q526t7x	5	23	have	have	AUX
h702q526t7x	5	24	become	become	VERB
h702q526t7x	5	25	available	available	ADJ
h702q526t7x	5	26	,	,	PUNCT
h702q526t7x	5	27	opening	open	VERB
h702q526t7x	5	28	the	the	DET
h702q526t7x	5	29	door	door	NOUN
h702q526t7x	5	30	for	for	ADP
h702q526t7x	5	31	fundamental	fundamental	ADJ
h702q526t7x	5	32	advances	advance	NOUN
h702q526t7x	5	33	in	in	ADP
h702q526t7x	5	34	epitaxy	epitaxy	PROPN
h702q526t7x	5	35	,	,	PUNCT
h702q526t7x	5	36	and	and	CCONJ
h702q526t7x	5	37	physical	physical	ADJ
h702q526t7x	5	38	re	re	NOUN
h702q526t7x	5	39	-	-	NOUN
h702q526t7x	5	40	evaluation	evaluation	NOUN
h702q526t7x	5	41	of	of	ADP
h702q526t7x	5	42	the	the	DET
h702q526t7x	5	43	iii	iii	NOUN
h702q526t7x	5	44	-	-	PUNCT
h702q526t7x	5	45	nitrides	nitride	NOUN
h702q526t7x	5	46	,	,	PUNCT
h702q526t7x	5	47	and	and	CCONJ
h702q526t7x	5	48	also	also	ADV
h702q526t7x	5	49	potentially	potentially	ADV
h702q526t7x	5	50	new	new	ADJ
h702q526t7x	5	51	applications	application	NOUN
h702q526t7x	5	52	in	in	ADP
h702q526t7x	5	53	optical	optical	ADJ
h702q526t7x	5	54	and	and	CCONJ
h702q526t7x	5	55	electronic	electronic	ADJ
h702q526t7x	5	56	devices	device	NOUN
h702q526t7x	5	57	.	.	PUNCT
h702q526t7x	6	1	in	in	ADP
h702q526t7x	6	2	this	this	DET
h702q526t7x	6	3	work	work	NOUN
h702q526t7x	6	4	,	,	PUNCT
h702q526t7x	6	5	we	we	PRON
h702q526t7x	6	6	have	have	AUX
h702q526t7x	6	7	explored	explore	VERB
h702q526t7x	6	8	various	various	ADJ
h702q526t7x	6	9	iii	iii	NUM
h702q526t7x	6	10	-	-	PUNCT
h702q526t7x	6	11	nitride	nitride	NOUN
h702q526t7x	6	12	heterostructures	heterostructure	NOUN
h702q526t7x	6	13	epitaxially	epitaxially	ADV
h702q526t7x	6	14	grown	grow	VERB
h702q526t7x	6	15	on	on	ADP
h702q526t7x	6	16	single	single	ADJ
h702q526t7x	6	17	-	-	PUNCT
h702q526t7x	6	18	crystal	crystal	NOUN
h702q526t7x	6	19	bulk	bulk	NOUN
h702q526t7x	6	20	aln	aln	PROPN
h702q526t7x	6	21	and	and	CCONJ
h702q526t7x	6	22	gan	gan	PROPN
h702q526t7x	6	23	substrates	substrates	PROPN
h702q526t7x	6	24	.	.	PUNCT
h702q526t7x	7	1	mbe	mbe	PROPN
h702q526t7x	7	2	grown	grow	VERB
h702q526t7x	7	3	vertical	vertical	ADJ
h702q526t7x	7	4	p	p	PROPN
h702q526t7x	7	5	-	-	PUNCT
h702q526t7x	7	6	n	n	NOUN
h702q526t7x	7	7	junctions	junction	NOUN
h702q526t7x	7	8	enabled	enable	VERB
h702q526t7x	7	9	by	by	ADP
h702q526t7x	7	10	n+	n+	PROPN
h702q526t7x	7	11	gan	gan	PROPN
h702q526t7x	7	12	bulk	bulk	ADJ
h702q526t7x	7	13	substrates	substrate	NOUN
h702q526t7x	7	14	are	be	AUX
h702q526t7x	7	15	studied	study	VERB
h702q526t7x	7	16	for	for	ADP
h702q526t7x	7	17	high	high	ADJ
h702q526t7x	7	18	power	power	NOUN
h702q526t7x	7	19	applications	application	NOUN
h702q526t7x	7	20	.	.	PUNCT
h702q526t7x	8	1	gan	gan	PROPN
h702q526t7x	8	2	p	p	PROPN
h702q526t7x	8	3	-	-	PUNCT
h702q526t7x	8	4	n	n	NOUN
h702q526t7x	8	5	junctions	junction	NOUN
h702q526t7x	8	6	with	with	ADP
h702q526t7x	8	7	off	off	ADP
h702q526t7x	8	8	-	-	PUNCT
h702q526t7x	8	9	state	state	NOUN
h702q526t7x	8	10	leakage	leakage	NOUN
h702q526t7x	8	11	current	current	NOUN
h702q526t7x	8	12	as	as	ADV
h702q526t7x	8	13	low	low	ADJ
h702q526t7x	8	14	as	as	ADP
h702q526t7x	8	15	3	3	NUM
h702q526t7x	8	16	na	na	ADP
h702q526t7x	8	17	/	/	SYM
h702q526t7x	8	18	cm2	cm2	PROPN
h702q526t7x	8	19	,	,	PUNCT
h702q526t7x	8	20	an	an	DET
h702q526t7x	8	21	on	on	ADP
h702q526t7x	8	22	-	-	PUNCT
h702q526t7x	8	23	resistance	resistance	NOUN
h702q526t7x	8	24	of	of	ADP
h702q526t7x	8	25	0.23	0.23	NUM
h702q526t7x	8	26	mω·cm2	mω·cm2	PROPN
h702q526t7x	8	27	and	and	CCONJ
h702q526t7x	8	28	a	a	DET
h702q526t7x	8	29	breakdown	breakdown	NOUN
h702q526t7x	8	30	field	field	NOUN
h702q526t7x	8	31	of	of	ADP
h702q526t7x	8	32	~3.1	~3.1	PUNCT
h702q526t7x	8	33	mv	mv	PROPN
h702q526t7x	8	34	/	/	SYM
h702q526t7x	8	35	cm	cm	PROPN
h702q526t7x	8	36	are	be	AUX
h702q526t7x	8	37	achieved	achieve	VERB
h702q526t7x	8	38	.	.	PUNCT
h702q526t7x	9	1	these	these	DET
h702q526t7x	9	2	leakage	leakage	NOUN
h702q526t7x	9	3	and	and	CCONJ
h702q526t7x	9	4	breakdown	breakdown	NOUN
h702q526t7x	9	5	characteristics	characteristic	NOUN
h702q526t7x	9	6	represent	represent	VERB
h702q526t7x	9	7	the	the	DET
h702q526t7x	9	8	highest	high	ADJ
h702q526t7x	9	9	performance	performance	NOUN
h702q526t7x	9	10	metrics	metric	NOUN
h702q526t7x	9	11	in	in	ADP
h702q526t7x	9	12	gan	gan	PROPN
h702q526t7x	9	13	p	p	PROPN
h702q526t7x	9	14	-	-	PUNCT
h702q526t7x	9	15	n	n	NOUN
h702q526t7x	9	16	junction	junction	NOUN
h702q526t7x	9	17	diodes	diode	NOUN
h702q526t7x	9	18	grown	grow	VERB
h702q526t7x	9	19	by	by	ADP
h702q526t7x	9	20	mbe	mbe	PROPN
h702q526t7x	9	21	.	.	PUNCT
h702q526t7x	10	1	to	to	PART
h702q526t7x	10	2	further	far	ADV
h702q526t7x	10	3	improve	improve	VERB
h702q526t7x	10	4	the	the	DET
h702q526t7x	10	5	high	high	ADJ
h702q526t7x	10	6	field	field	NOUN
h702q526t7x	10	7	properties	property	NOUN
h702q526t7x	10	8	of	of	ADP
h702q526t7x	10	9	p	p	NOUN
h702q526t7x	10	10	-	-	PUNCT
h702q526t7x	10	11	n	n	NOUN
h702q526t7x	10	12	junctions	junction	NOUN
h702q526t7x	10	13	,	,	PUNCT
h702q526t7x	10	14	polarization	polarization	NOUN
h702q526t7x	10	15	-	-	PUNCT
h702q526t7x	10	16	induced	induce	VERB
h702q526t7x	10	17	algan	algan	NOUN
h702q526t7x	10	18	(	(	PUNCT
h702q526t7x	10	19	pi	pi	NOUN
h702q526t7x	10	20	-	-	PUNCT
h702q526t7x	10	21	algan	algan	PROPN
h702q526t7x	10	22	)	)	PUNCT
h702q526t7x	10	23	p	p	X
h702q526t7x	10	24	-	-	PUNCT
h702q526t7x	10	25	n	n	NOUN
h702q526t7x	10	26	junctions	junction	NOUN
h702q526t7x	10	27	are	be	AUX
h702q526t7x	10	28	grown	grow	VERB
h702q526t7x	10	29	by	by	ADP
h702q526t7x	10	30	mbe	mbe	PROPN
h702q526t7x	10	31	.	.	PUNCT
h702q526t7x	11	1	compared	compare	VERB
h702q526t7x	11	2	to	to	ADP
h702q526t7x	11	3	gan	gan	PROPN
h702q526t7x	11	4	p	p	PROPN
h702q526t7x	11	5	-	-	PUNCT
h702q526t7x	11	6	n	n	PROPN
h702q526t7x	11	7	homojunction	homojunction	PROPN
h702q526t7x	11	8	diodes	diode	NOUN
h702q526t7x	11	9	,	,	PUNCT
h702q526t7x	11	10	the	the	DET
h702q526t7x	11	11	pi	pi	NOUN
h702q526t7x	11	12	-	-	PUNCT
h702q526t7x	11	13	algan	algan	PROPN
h702q526t7x	11	14	p	p	PROPN
h702q526t7x	11	15	-	-	PUNCT
h702q526t7x	11	16	n	n	NOUN
h702q526t7x	11	17	diodes	diode	NOUN
h702q526t7x	11	18	take	take	VERB
h702q526t7x	11	19	advantages	advantage	NOUN
h702q526t7x	11	20	of	of	ADP
h702q526t7x	11	21	both	both	DET
h702q526t7x	11	22	polarization	polarization	NOUN
h702q526t7x	11	23	-	-	PUNCT
h702q526t7x	11	24	induced	induce	VERB
h702q526t7x	11	25	doping	doping	NOUN
h702q526t7x	11	26	and	and	CCONJ
h702q526t7x	11	27	the	the	DET
h702q526t7x	11	28	larger	large	ADJ
h702q526t7x	11	29	band	band	NOUN
h702q526t7x	11	30	gap	gap	NOUN
h702q526t7x	11	31	of	of	ADP
h702q526t7x	11	32	algan	algan	NOUN
h702q526t7x	11	33	,	,	PUNCT
h702q526t7x	11	34	to	to	PART
h702q526t7x	11	35	achieve	achieve	VERB
h702q526t7x	11	36	improved	improved	ADJ
h702q526t7x	11	37	breakdown	breakdown	NOUN
h702q526t7x	11	38	properties	property	NOUN
h702q526t7x	11	39	but	but	CCONJ
h702q526t7x	11	40	still	still	ADV
h702q526t7x	11	41	with	with	ADP
h702q526t7x	11	42	a	a	DET
h702q526t7x	11	43	low	low	ADJ
h702q526t7x	11	44	resistance	resistance	NOUN
h702q526t7x	11	45	.	.	PUNCT
h702q526t7x	12	1	the	the	DET
h702q526t7x	12	2	fabricated	fabricate	VERB
h702q526t7x	12	3	polarization	polarization	NOUN
h702q526t7x	12	4	-	-	PUNCT
h702q526t7x	12	5	induced	induce	VERB
h702q526t7x	12	6	al0.23gan	al0.23gan	PROPN
h702q526t7x	12	7	p	p	NOUN
h702q526t7x	12	8	-	-	PUNCT
h702q526t7x	12	9	n	n	NOUN
h702q526t7x	12	10	diodes	diode	NOUN
h702q526t7x	12	11	show	show	VERB
h702q526t7x	12	12	a	a	DET
h702q526t7x	12	13	highest	high	ADJ
h702q526t7x	12	14	breakdown	breakdown	NOUN
h702q526t7x	12	15	field	field	NOUN
h702q526t7x	12	16	of	of	ADP
h702q526t7x	12	17	~3.8	~3.8	PROPN
h702q526t7x	12	18	mv	mv	PROPN
h702q526t7x	12	19	/	/	SYM
h702q526t7x	12	20	cm	cm	PROPN
h702q526t7x	12	21	.	.	PUNCT
h702q526t7x	13	1	the	the	DET
h702q526t7x	13	2	breakdown	breakdown	NOUN
h702q526t7x	13	3	field	field	NOUN
h702q526t7x	13	4	is	be	AUX
h702q526t7x	13	5	among	among	ADP
h702q526t7x	13	6	the	the	DET
h702q526t7x	13	7	highest	high	ADJ
h702q526t7x	13	8	reported	report	VERB
h702q526t7x	13	9	values	value	NOUN
h702q526t7x	13	10	for	for	ADP
h702q526t7x	13	11	iii	iii	NOUN
h702q526t7x	13	12	-	-	PUNCT
h702q526t7x	13	13	nitrides	nitride	NOUN
h702q526t7x	13	14	.	.	PUNCT
h702q526t7x	14	1	based	base	VERB
h702q526t7x	14	2	on	on	ADP
h702q526t7x	14	3	the	the	DET
h702q526t7x	14	4	observed	observed	ADJ
h702q526t7x	14	5	electroluminescence	electroluminescence	NOUN
h702q526t7x	14	6	from	from	ADP
h702q526t7x	14	7	the	the	DET
h702q526t7x	14	8	gan	gan	PROPN
h702q526t7x	14	9	p	p	PROPN
h702q526t7x	14	10	-	-	PUNCT
h702q526t7x	14	11	n	n	NOUN
h702q526t7x	14	12	diodes	diode	NOUN
h702q526t7x	14	13	,	,	PUNCT
h702q526t7x	14	14	we	we	PRON
h702q526t7x	14	15	propose	propose	VERB
h702q526t7x	14	16	optical	optical	ADJ
h702q526t7x	14	17	cooling	cooling	NOUN
h702q526t7x	14	18	for	for	ADP
h702q526t7x	14	19	power	power	NOUN
h702q526t7x	14	20	electronic	electronic	ADJ
h702q526t7x	14	21	devices	device	NOUN
h702q526t7x	14	22	.	.	PUNCT
h702q526t7x	15	1	the	the	DET
h702q526t7x	15	2	excellent	excellent	ADJ
h702q526t7x	15	3	high	high	ADJ
h702q526t7x	15	4	field	field	NOUN
h702q526t7x	15	5	properties	property	NOUN
h702q526t7x	15	6	together	together	ADV
h702q526t7x	15	7	with	with	ADP
h702q526t7x	15	8	unique	unique	ADJ
h702q526t7x	15	9	optical	optical	ADJ
h702q526t7x	15	10	cooling	cooling	NOUN
h702q526t7x	15	11	of	of	ADP
h702q526t7x	15	12	iii	iii	NOUN
h702q526t7x	15	13	-	-	PUNCT
h702q526t7x	15	14	nitrides	nitride	NOUN
h702q526t7x	15	15	makes	make	VERB
h702q526t7x	15	16	the	the	DET
h702q526t7x	15	17	pi	pi	NOUN
h702q526t7x	15	18	-	-	PUNCT
h702q526t7x	15	19	algan	algan	PROPN
h702q526t7x	15	20	heterostructures	heterostructure	NOUN
h702q526t7x	15	21	candidates	candidate	NOUN
h702q526t7x	15	22	for	for	ADP
h702q526t7x	15	23	a	a	DET
h702q526t7x	15	24	new	new	ADJ
h702q526t7x	15	25	generation	generation	NOUN
h702q526t7x	15	26	of	of	ADP
h702q526t7x	15	27	power	power	NOUN
h702q526t7x	15	28	electronic	electronic	ADJ
h702q526t7x	15	29	devices	device	NOUN
h702q526t7x	15	30	.	.	PUNCT
h702q526t7x	16	1	mbe	mbe	PROPN
h702q526t7x	16	2	growths	growth	NOUN
h702q526t7x	16	3	of	of	ADP
h702q526t7x	16	4	aln	aln	PROPN
h702q526t7x	16	5	/	/	SYM
h702q526t7x	16	6	gan	gan	PROPN
h702q526t7x	16	7	/	/	SYM
h702q526t7x	16	8	aln	aln	PROPN
h702q526t7x	16	9	quantum	quantum	PROPN
h702q526t7x	16	10	well	well	PROPN
h702q526t7x	16	11	(	(	PUNCT
h702q526t7x	16	12	qw	qw	NOUN
h702q526t7x	16	13	)	)	PUNCT
h702q526t7x	16	14	heterostructures	heterostructure	NOUN
h702q526t7x	16	15	on	on	ADP
h702q526t7x	16	16	single	single	ADJ
h702q526t7x	16	17	-	-	PUNCT
h702q526t7x	16	18	crystal	crystal	NOUN
h702q526t7x	16	19	bulk	bulk	PROPN
h702q526t7x	16	20	aln	aln	PROPN
h702q526t7x	16	21	were	be	AUX
h702q526t7x	16	22	studied	study	VERB
h702q526t7x	16	23	.	.	PUNCT
h702q526t7x	17	1	the	the	DET
h702q526t7x	17	2	qw	qw	PROPN
h702q526t7x	17	3	structure	structure	NOUN
h702q526t7x	17	4	has	have	AUX
h702q526t7x	17	5	shown	show	VERB
h702q526t7x	17	6	attractive	attractive	ADJ
h702q526t7x	17	7	properties	property	NOUN
h702q526t7x	17	8	such	such	ADJ
h702q526t7x	17	9	as	as	ADP
h702q526t7x	17	10	the	the	DET
h702q526t7x	17	11	presence	presence	NOUN
h702q526t7x	17	12	of	of	ADP
h702q526t7x	17	13	a	a	DET
h702q526t7x	17	14	2deg	2deg	NUM
h702q526t7x	17	15	whose	whose	DET
h702q526t7x	17	16	charge	charge	NOUN
h702q526t7x	17	17	can	can	AUX
h702q526t7x	17	18	be	be	AUX
h702q526t7x	17	19	varied	vary	VERB
h702q526t7x	17	20	by	by	ADP
h702q526t7x	17	21	changing	change	VERB
h702q526t7x	17	22	the	the	DET
h702q526t7x	17	23	qw	qw	NOUN
h702q526t7x	17	24	thickness	thickness	NOUN
h702q526t7x	17	25	as	as	ADV
h702q526t7x	17	26	well	well	ADV
h702q526t7x	17	27	as	as	ADP
h702q526t7x	17	28	the	the	DET
h702q526t7x	17	29	barrier	barrier	NOUN
h702q526t7x	17	30	thickness	thickness	NOUN
h702q526t7x	17	31	.	.	PUNCT
h702q526t7x	18	1	the	the	DET
h702q526t7x	18	2	aln	aln	PROPN
h702q526t7x	18	3	barrier	barrier	NOUN
h702q526t7x	18	4	of	of	ADP
h702q526t7x	18	5	the	the	DET
h702q526t7x	18	6	qw	qw	PROPN
h702q526t7x	18	7	induces	induce	VERB
h702q526t7x	18	8	the	the	DET
h702q526t7x	18	9	maximal	maximal	ADJ
h702q526t7x	18	10	carrier	carrier	NOUN
h702q526t7x	18	11	densities	density	NOUN
h702q526t7x	18	12	while	while	SCONJ
h702q526t7x	18	13	providing	provide	VERB
h702q526t7x	18	14	the	the	DET
h702q526t7x	18	15	best	good	ADJ
h702q526t7x	18	16	confinement	confinement	NOUN
h702q526t7x	18	17	for	for	ADP
h702q526t7x	18	18	gan	gan	ADJ
h702q526t7x	18	19	channels	channel	NOUN
h702q526t7x	18	20	at	at	ADP
h702q526t7x	18	21	the	the	DET
h702q526t7x	18	22	same	same	ADJ
h702q526t7x	18	23	time	time	NOUN
h702q526t7x	18	24	.	.	PUNCT
h702q526t7x	19	1	bulk	bulk	ADJ
h702q526t7x	19	2	single	single	PROPN
h702q526t7x	19	3	crystal	crystal	PROPN
h702q526t7x	19	4	aln	aln	PROPN
h702q526t7x	19	5	substrates	substrates	PROPN
h702q526t7x	19	6	offer	offer	VERB
h702q526t7x	19	7	the	the	DET
h702q526t7x	19	8	highest	high	ADJ
h702q526t7x	19	9	thermal	thermal	ADJ
h702q526t7x	19	10	conductivity	conductivity	NOUN
h702q526t7x	19	11	possible	possible	ADJ
h702q526t7x	19	12	in	in	ADP
h702q526t7x	19	13	the	the	DET
h702q526t7x	19	14	iii	iii	ADJ
h702q526t7x	19	15	-	-	PUNCT
h702q526t7x	19	16	nitride	nitride	NOUN
h702q526t7x	19	17	materials	material	NOUN
h702q526t7x	19	18	and	and	CCONJ
h702q526t7x	19	19	a	a	DET
h702q526t7x	19	20	low	low	ADJ
h702q526t7x	19	21	dislocation	dislocation	NOUN
h702q526t7x	19	22	density	density	NOUN
h702q526t7x	19	23	platform	platform	NOUN
h702q526t7x	19	24	.	.	PUNCT
h702q526t7x	20	1	by	by	ADP
h702q526t7x	20	2	the	the	DET
h702q526t7x	20	3	growth	growth	NOUN
h702q526t7x	20	4	optimization	optimization	NOUN
h702q526t7x	20	5	of	of	ADP
h702q526t7x	20	6	gan	gan	PROPN
h702q526t7x	20	7	qws	qws	PROPN
h702q526t7x	20	8	on	on	ADP
h702q526t7x	20	9	single	single	ADJ
h702q526t7x	20	10	crystal	crystal	PROPN
h702q526t7x	20	11	aln	aln	PROPN
h702q526t7x	20	12	substrates	substrates	PROPN
h702q526t7x	20	13	,	,	PUNCT
h702q526t7x	20	14	an	an	DET
h702q526t7x	20	15	n	n	NOUN
h702q526t7x	20	16	-	-	PUNCT
h702q526t7x	20	17	channel	channel	NOUN
h702q526t7x	20	18	2deg	2deg	NUM
h702q526t7x	20	19	with	with	ADP
h702q526t7x	20	20	an	an	DET
h702q526t7x	20	21	electron	electron	NOUN
h702q526t7x	20	22	mobilities	mobility	NOUN
h702q526t7x	20	23	of	of	ADP
h702q526t7x	20	24	601/1380	601/1380	NUM
h702q526t7x	20	25	cm2	cm2	PROPN
h702q526t7x	20	26	/	/	SYM
h702q526t7x	20	27	v·s	v·s	NOUN
h702q526t7x	20	28	with	with	ADP
h702q526t7x	20	29	a	a	DET
h702q526t7x	20	30	2deg	2deg	NUM
h702q526t7x	20	31	densities	density	NOUN
h702q526t7x	20	32	of	of	ADP
h702q526t7x	20	33	3.2/2.6×1013	3.2/2.6×1013	NUM
h702q526t7x	20	34	cm-2	cm-2	PROPN
h702q526t7x	20	35	and	and	CCONJ
h702q526t7x	20	36	sheet	sheet	NOUN
h702q526t7x	20	37	resistance	resistance	NOUN
h702q526t7x	20	38	of	of	ADP
h702q526t7x	20	39	327/171	327/171	PROPN
h702q526t7x	20	40	ω/	ω/	SPACE
h702q526t7x	20	41	□	□	PUNCT
h702q526t7x	20	42	were	be	AUX
h702q526t7x	20	43	measured	measure	VERB
h702q526t7x	20	44	at	at	ADP
h702q526t7x	20	45	300/77	300/77	NUM
h702q526t7x	20	46	k.	k.	NOUN
h702q526t7x	20	47	the	the	DET
h702q526t7x	20	48	mobilities	mobility	NOUN
h702q526t7x	20	49	at	at	ADP
h702q526t7x	20	50	300	300	NUM
h702q526t7x	20	51	k	k	PROPN
h702q526t7x	20	52	and	and	CCONJ
h702q526t7x	20	53	77	77	NUM
h702q526t7x	20	54	k	k	PROPN
h702q526t7x	20	55	are	be	AUX
h702q526t7x	20	56	both	both	CCONJ
h702q526t7x	20	57	the	the	DET
h702q526t7x	20	58	highest	high	ADJ
h702q526t7x	20	59	among	among	ADP
h702q526t7x	20	60	gan	gan	PROPN
h702q526t7x	20	61	qw	qw	PROPN
h702q526t7x	20	62	heterostructures	heterostructure	NOUN
h702q526t7x	20	63	on	on	ADP
h702q526t7x	20	64	the	the	DET
h702q526t7x	20	65	aln	aln	PROPN
h702q526t7x	20	66	platform	platform	NOUN
h702q526t7x	20	67	.	.	PUNCT
h702q526t7x	21	1	the	the	DET
h702q526t7x	21	2	resulting	result	VERB
h702q526t7x	21	3	overall	overall	ADJ
h702q526t7x	21	4	electrical	electrical	ADJ
h702q526t7x	21	5	properties	property	NOUN
h702q526t7x	21	6	make	make	VERB
h702q526t7x	21	7	the	the	DET
h702q526t7x	21	8	qw	qw	NOUN
h702q526t7x	21	9	heterostructures	heterostructure	NOUN
h702q526t7x	21	10	well	well	ADV
h702q526t7x	21	11	suited	suited	ADJ
h702q526t7x	21	12	for	for	ADP
h702q526t7x	21	13	high	high	ADJ
h702q526t7x	21	14	-	-	PUNCT
h702q526t7x	21	15	frequency	frequency	NOUN
h702q526t7x	21	16	field	field	NOUN
h702q526t7x	21	17	effect	effect	NOUN
h702q526t7x	21	18	transistors	transistor	NOUN
h702q526t7x	21	19	.	.	PUNCT
h702q526t7x	22	1	ultra	ultra	ADJ
h702q526t7x	22	2	-	-	ADJ
h702q526t7x	22	3	thin	thin	ADJ
h702q526t7x	22	4	body	body	NOUN
h702q526t7x	22	5	(	(	PUNCT
h702q526t7x	22	6	utb	utb	NOUN
h702q526t7x	22	7	)	)	PUNCT
h702q526t7x	22	8	gan	gan	PROPN
h702q526t7x	22	9	on	on	ADP
h702q526t7x	22	10	aln	aln	PROPN
h702q526t7x	22	11	platform	platform	NOUN
h702q526t7x	22	12	also	also	ADV
h702q526t7x	22	13	enables	enable	VERB
h702q526t7x	22	14	high	high	ADJ
h702q526t7x	22	15	density	density	NOUN
h702q526t7x	22	16	of	of	ADP
h702q526t7x	22	17	two	two	NUM
h702q526t7x	22	18	-	-	PUNCT
h702q526t7x	22	19	dimensional	dimensional	ADJ
h702q526t7x	22	20	hole	hole	NOUN
h702q526t7x	22	21	gases	gas	NOUN
h702q526t7x	22	22	(	(	PUNCT
h702q526t7x	22	23	dhg	dhg	PROPN
h702q526t7x	22	24	)	)	PUNCT
h702q526t7x	22	25	,	,	PUNCT
h702q526t7x	22	26	by	by	ADP
h702q526t7x	22	27	polarization	polarization	NOUN
h702q526t7x	22	28	-	-	PUNCT
h702q526t7x	22	29	induced	induce	VERB
h702q526t7x	22	30	p	p	NOUN
h702q526t7x	22	31	-	-	PUNCT
h702q526t7x	22	32	type	type	NOUN
h702q526t7x	22	33	doping	doping	NOUN
h702q526t7x	22	34	.	.	PUNCT
h702q526t7x	23	1	the	the	DET
h702q526t7x	23	2	growth	growth	NOUN
h702q526t7x	23	3	of	of	ADP
h702q526t7x	23	4	the	the	DET
h702q526t7x	23	5	utb	utb	PROPN
h702q526t7x	23	6	gan	gan	PROPN
h702q526t7x	23	7	/	/	PROPN
h702q526t7x	23	8	aln	aln	PROPN
h702q526t7x	23	9	heterosturcture	heterosturcture	PROPN
h702q526t7x	23	10	is	be	AUX
h702q526t7x	23	11	studied	study	VERB
h702q526t7x	23	12	on	on	ADP
h702q526t7x	23	13	single	single	ADJ
h702q526t7x	23	14	-	-	PUNCT
h702q526t7x	23	15	crystal	crystal	NOUN
h702q526t7x	23	16	bulk	bulk	NOUN
h702q526t7x	23	17	aln	aln	PROPN
h702q526t7x	23	18	as	as	ADV
h702q526t7x	23	19	well	well	ADV
h702q526t7x	23	20	,	,	PUNCT
h702q526t7x	23	21	and	and	CCONJ
h702q526t7x	23	22	2dhg	2dhg	NUM
h702q526t7x	23	23	is	be	AUX
h702q526t7x	23	24	measured	measure	VERB
h702q526t7x	23	25	experimentally	experimentally	ADV
h702q526t7x	23	26	.	.	PUNCT
h702q526t7x	24	1	the	the	DET
h702q526t7x	24	2	strained	strained	ADJ
h702q526t7x	24	3	gan	gan	ADJ
h702q526t7x	24	4	layer	layer	NOUN
h702q526t7x	24	5	qw	qw	PROPN
h702q526t7x	24	6	layer	layer	NOUN
h702q526t7x	24	7	in	in	ADP
h702q526t7x	24	8	the	the	DET
h702q526t7x	24	9	aln	aln	PROPN
h702q526t7x	24	10	/	/	SYM
h702q526t7x	24	11	gan	gan	PROPN
h702q526t7x	24	12	/	/	SYM
h702q526t7x	24	13	aln	aln	PROPN
h702q526t7x	24	14	qw	qw	PROPN
h702q526t7x	24	15	structures	structure	NOUN
h702q526t7x	24	16	discussed	discuss	VERB
h702q526t7x	24	17	above	above	ADV
h702q526t7x	24	18	were	be	AUX
h702q526t7x	24	19	demonstrated	demonstrate	VERB
h702q526t7x	24	20	as	as	ADP
h702q526t7x	24	21	optical	optical	ADJ
h702q526t7x	24	22	markers	marker	NOUN
h702q526t7x	24	23	for	for	ADP
h702q526t7x	24	24	raman	raman	ADJ
h702q526t7x	24	25	characterization	characterization	NOUN
h702q526t7x	24	26	.	.	PUNCT
h702q526t7x	25	1	the	the	DET
h702q526t7x	25	2	gan	gan	PROPN
h702q526t7x	25	3	qw	qw	PROPN
h702q526t7x	25	4	structure	structure	NOUN
h702q526t7x	25	5	is	be	AUX
h702q526t7x	25	6	ideally	ideally	ADV
h702q526t7x	25	7	suited	suit	VERB
h702q526t7x	25	8	as	as	ADP
h702q526t7x	25	9	an	an	DET
h702q526t7x	25	10	optical	optical	ADJ
h702q526t7x	25	11	marker	marker	NOUN
h702q526t7x	25	12	because	because	SCONJ
h702q526t7x	25	13	all	all	DET
h702q526t7x	25	14	other	other	ADJ
h702q526t7x	25	15	regions	region	NOUN
h702q526t7x	25	16	–	–	PUNCT
h702q526t7x	25	17	the	the	DET
h702q526t7x	25	18	barrier	barrier	NOUN
h702q526t7x	25	19	and	and	CCONJ
h702q526t7x	25	20	the	the	DET
h702q526t7x	25	21	underlying	underlying	ADJ
h702q526t7x	25	22	buffer	buffer	NOUN
h702q526t7x	25	23	have	have	VERB
h702q526t7x	25	24	much	much	ADV
h702q526t7x	25	25	larger	large	ADJ
h702q526t7x	25	26	bandgaps	bandgap	NOUN
h702q526t7x	25	27	.	.	PUNCT
h702q526t7x	26	1	together	together	ADV
h702q526t7x	26	2	with	with	ADP
h702q526t7x	26	3	isotope	isotope	NOUN
h702q526t7x	26	4	15n	15n	PROPN
h702q526t7x	26	5	as	as	ADP
h702q526t7x	26	6	a	a	DET
h702q526t7x	26	7	second	second	ADJ
h702q526t7x	26	8	optical	optical	ADJ
h702q526t7x	26	9	marker	marker	NOUN
h702q526t7x	26	10	,	,	PUNCT
h702q526t7x	26	11	a	a	DET
h702q526t7x	26	12	new	new	ADJ
h702q526t7x	26	13	dual	dual	ADJ
h702q526t7x	26	14	marker	marker	NOUN
h702q526t7x	26	15	method	method	NOUN
h702q526t7x	26	16	for	for	ADP
h702q526t7x	26	17	raman	raman	ADJ
h702q526t7x	26	18	spectroscopy	spectroscopy	NOUN
h702q526t7x	26	19	is	be	AUX
h702q526t7x	26	20	enabled	enable	VERB
h702q526t7x	26	21	and	and	CCONJ
h702q526t7x	26	22	demonstrated	demonstrate	VERB
h702q526t7x	26	23	.	.	PUNCT
h702q526t7x	27	1	we	we	PRON
h702q526t7x	27	2	demonstrate	demonstrate	VERB
h702q526t7x	27	3	the	the	DET
h702q526t7x	27	4	effectiveness	effectiveness	NOUN
h702q526t7x	27	5	of	of	ADP
h702q526t7x	27	6	dual	dual	ADJ
h702q526t7x	27	7	optial	optial	ADJ
h702q526t7x	27	8	marker	marker	NOUN
h702q526t7x	27	9	raman	raman	NOUN
h702q526t7x	27	10	spectroscopy	spectroscopy	NOUN
h702q526t7x	27	11	in	in	ADP
h702q526t7x	27	12	studying	study	VERB
h702q526t7x	27	13	strain	strain	NOUN
h702q526t7x	27	14	in	in	ADP
h702q526t7x	27	15	both	both	DET
h702q526t7x	27	16	vertical	vertical	ADJ
h702q526t7x	27	17	and	and	CCONJ
h702q526t7x	27	18	horizontal	horizontal	ADJ
h702q526t7x	27	19	directions	direction	NOUN
h702q526t7x	27	20	.	.	PUNCT