id	sid	tid	token	lemma	pos
j9601z42v94	1	1	to	to	PART
j9601z42v94	1	2	achieve	achieve	VERB
j9601z42v94	1	3	high	high	ADJ
j9601z42v94	1	4	-	-	PUNCT
j9601z42v94	1	5	speed	speed	NOUN
j9601z42v94	1	6	nitride	nitride	NOUN
j9601z42v94	1	7	-	-	PUNCT
j9601z42v94	1	8	based	base	VERB
j9601z42v94	1	9	high	high	ADJ
j9601z42v94	1	10	electron	electron	NOUN
j9601z42v94	1	11	mobility	mobility	NOUN
j9601z42v94	1	12	transistors	transistor	NOUN
j9601z42v94	1	13	(	(	PUNCT
j9601z42v94	1	14	hemts	hemts	PROPN
j9601z42v94	1	15	)	)	PUNCT
j9601z42v94	1	16	,	,	PUNCT
j9601z42v94	1	17	both	both	CCONJ
j9601z42v94	1	18	lateral	lateral	ADJ
j9601z42v94	1	19	and	and	CCONJ
j9601z42v94	1	20	vertical	vertical	ADJ
j9601z42v94	1	21	scaling	scaling	NOUN
j9601z42v94	1	22	are	be	AUX
j9601z42v94	1	23	required	require	VERB
j9601z42v94	1	24	for	for	ADP
j9601z42v94	1	25	future	future	ADJ
j9601z42v94	1	26	device	device	NOUN
j9601z42v94	1	27	fabrication	fabrication	NOUN
j9601z42v94	1	28	.	.	PUNCT
j9601z42v94	2	1	the	the	DET
j9601z42v94	2	2	large	large	ADJ
j9601z42v94	2	3	polarization	polarization	NOUN
j9601z42v94	2	4	difference	difference	NOUN
j9601z42v94	2	5	between	between	ADP
j9601z42v94	2	6	aln	aln	ADV
j9601z42v94	2	7	and	and	CCONJ
j9601z42v94	2	8	gan	gan	PROPN
j9601z42v94	2	9	provides	provide	VERB
j9601z42v94	2	10	extremely	extremely	ADV
j9601z42v94	2	11	high	high	ADJ
j9601z42v94	2	12	electron	electron	NOUN
j9601z42v94	2	13	densities	density	NOUN
j9601z42v94	2	14	at	at	ADP
j9601z42v94	2	15	the	the	DET
j9601z42v94	2	16	heterointerface	heterointerface	NOUN
j9601z42v94	2	17	covered	cover	VERB
j9601z42v94	2	18	by	by	ADP
j9601z42v94	2	19	only	only	ADV
j9601z42v94	2	20	~3	~3	NUM
j9601z42v94	2	21	-	-	SYM
j9601z42v94	2	22	4	4	NUM
j9601z42v94	2	23	nm	nm	PROPN
j9601z42v94	2	24	aln	aln	PROPN
j9601z42v94	2	25	barrier	barrier	NOUN
j9601z42v94	2	26	,	,	PUNCT
j9601z42v94	2	27	which	which	PRON
j9601z42v94	2	28	makes	make	VERB
j9601z42v94	2	29	aln	aln	ADV
j9601z42v94	2	30	/	/	SYM
j9601z42v94	2	31	gan	gan	PROPN
j9601z42v94	2	32	heterojunction	heterojunction	NOUN
j9601z42v94	2	33	the	the	DET
j9601z42v94	2	34	ultimate	ultimate	ADJ
j9601z42v94	2	35	nitride	nitride	NOUN
j9601z42v94	2	36	structure	structure	NOUN
j9601z42v94	2	37	for	for	ADP
j9601z42v94	2	38	high	high	ADJ
j9601z42v94	2	39	-	-	PUNCT
j9601z42v94	2	40	frequency	frequency	NOUN
j9601z42v94	2	41	applications	application	NOUN
j9601z42v94	2	42	.	.	PUNCT
j9601z42v94	3	1	this	this	DET
j9601z42v94	3	2	work	work	NOUN
j9601z42v94	3	3	includes	include	VERB
j9601z42v94	3	4	the	the	DET
j9601z42v94	3	5	study	study	NOUN
j9601z42v94	3	6	of	of	ADP
j9601z42v94	3	7	mbe	mbe	PROPN
j9601z42v94	3	8	growth	growth	NOUN
j9601z42v94	3	9	of	of	ADP
j9601z42v94	3	10	single	single	ADJ
j9601z42v94	3	11	aln	aln	PROPN
j9601z42v94	3	12	/	/	SYM
j9601z42v94	3	13	gan	gan	PROPN
j9601z42v94	3	14	heterojunctions	heterojunctions	PROPN
j9601z42v94	3	15	,	,	PUNCT
j9601z42v94	3	16	theoretical	theoretical	ADJ
j9601z42v94	3	17	study	study	NOUN
j9601z42v94	3	18	of	of	ADP
j9601z42v94	3	19	2deg	2deg	NUM
j9601z42v94	3	20	scattering	scatter	VERB
j9601z42v94	3	21	mechanisms	mechanism	NOUN
j9601z42v94	3	22	,	,	PUNCT
j9601z42v94	3	23	and	and	CCONJ
j9601z42v94	3	24	device	device	NOUN
j9601z42v94	3	25	issues	issue	NOUN
j9601z42v94	3	26	of	of	ADP
j9601z42v94	3	27	removing	remove	VERB
j9601z42v94	3	28	buffer	buffer	NOUN
j9601z42v94	3	29	leakage	leakage	NOUN
j9601z42v94	3	30	with	with	ADP
j9601z42v94	3	31	polarization	polarization	NOUN
j9601z42v94	3	32	engineering	engineering	NOUN
j9601z42v94	3	33	and	and	CCONJ
j9601z42v94	3	34	decreasing	decrease	VERB
j9601z42v94	3	35	contact	contact	NOUN
j9601z42v94	3	36	resistance	resistance	NOUN
j9601z42v94	3	37	with	with	ADP
j9601z42v94	3	38	band	band	NOUN
j9601z42v94	3	39	diagram	diagram	PROPN
j9601z42v94	3	40	engineering	engineering	PROPN
j9601z42v94	3	41	.	.	PUNCT
j9601z42v94	4	1	high	high	ADJ
j9601z42v94	4	2	-	-	PUNCT
j9601z42v94	4	3	quality	quality	NOUN
j9601z42v94	4	4	single	single	ADJ
j9601z42v94	4	5	aln	aln	PROPN
j9601z42v94	4	6	/	/	SYM
j9601z42v94	4	7	gan	gan	PROPN
j9601z42v94	4	8	heterojunctions	heterojunction	NOUN
j9601z42v94	4	9	with	with	ADP
j9601z42v94	4	10	rfmbe	rfmbe	PROPN
j9601z42v94	4	11	are	be	AUX
j9601z42v94	4	12	reported	report	VERB
j9601z42v94	4	13	,	,	PUNCT
j9601z42v94	4	14	which	which	PRON
j9601z42v94	4	15	leads	lead	VERB
j9601z42v94	4	16	to	to	ADP
j9601z42v94	4	17	high	high	ADJ
j9601z42v94	4	18	-	-	PUNCT
j9601z42v94	4	19	conductivity	conductivity	NOUN
j9601z42v94	4	20	two	two	NUM
j9601z42v94	4	21	-	-	PUNCT
j9601z42v94	4	22	dimensional	dimensional	ADJ
j9601z42v94	4	23	electron	electron	NOUN
j9601z42v94	4	24	gases	gas	NOUN
j9601z42v94	4	25	.	.	PUNCT
j9601z42v94	5	1	the	the	DET
j9601z42v94	5	2	sheet	sheet	NOUN
j9601z42v94	5	3	densities	density	NOUN
j9601z42v94	5	4	can	can	AUX
j9601z42v94	5	5	be	be	AUX
j9601z42v94	5	6	tuned	tune	VERB
j9601z42v94	5	7	between	between	ADP
j9601z42v94	5	8	5e12	5e12	NUM
j9601z42v94	5	9	-	-	SYM
j9601z42v94	5	10	5e13	5e13	NUM
j9601z42v94	5	11	/cm^2	/cm^2	PUNCT
j9601z42v94	5	12	by	by	ADP
j9601z42v94	5	13	varying	vary	VERB
j9601z42v94	5	14	the	the	DET
j9601z42v94	5	15	aln	aln	ADJ
j9601z42v94	5	16	thickness	thickness	NOUN
j9601z42v94	5	17	from	from	ADP
j9601z42v94	5	18	2	2	NUM
j9601z42v94	5	19	-	-	SYM
j9601z42v94	5	20	7	7	NUM
j9601z42v94	5	21	nm	nm	NOUN
j9601z42v94	5	22	.	.	PUNCT
j9601z42v94	6	1	by	by	ADP
j9601z42v94	6	2	optimizing	optimize	VERB
j9601z42v94	6	3	the	the	DET
j9601z42v94	6	4	mbe	mbe	PROPN
j9601z42v94	6	5	growth	growth	NOUN
j9601z42v94	6	6	conditions	condition	NOUN
j9601z42v94	6	7	,	,	PUNCT
j9601z42v94	6	8	record	record	NOUN
j9601z42v94	6	9	low	low	ADJ
j9601z42v94	6	10	sheet	sheet	NOUN
j9601z42v94	6	11	resistances	resistance	NOUN
j9601z42v94	6	12	in	in	ADP
j9601z42v94	6	13	the	the	DET
j9601z42v94	6	14	range	range	NOUN
j9601z42v94	6	15	of	of	ADP
j9601z42v94	6	16	~128	~128	PROPN
j9601z42v94	6	17	ohm	ohm	PROPN
j9601z42v94	6	18	/	/	SYM
j9601z42v94	6	19	sq	sq	NOUN
j9601z42v94	6	20	has	have	AUX
j9601z42v94	6	21	been	be	AUX
j9601z42v94	6	22	achieved	achieve	VERB
j9601z42v94	6	23	.	.	PUNCT
j9601z42v94	7	1	as	as	ADP
j9601z42v94	7	2	a	a	DET
j9601z42v94	7	3	theoretical	theoretical	ADJ
j9601z42v94	7	4	work	work	NOUN
j9601z42v94	7	5	,	,	PUNCT
j9601z42v94	7	6	remote	remote	ADJ
j9601z42v94	7	7	surface	surface	NOUN
j9601z42v94	7	8	roughness	roughness	NOUN
j9601z42v94	7	9	(	(	PUNCT
j9601z42v94	7	10	rsr	rsr	NOUN
j9601z42v94	7	11	)	)	PUNCT
j9601z42v94	7	12	scattering	scattering	NOUN
j9601z42v94	7	13	is	be	AUX
j9601z42v94	7	14	studied	study	VERB
j9601z42v94	7	15	as	as	ADP
j9601z42v94	7	16	a	a	DET
j9601z42v94	7	17	new	new	ADJ
j9601z42v94	7	18	scattering	scattering	NOUN
j9601z42v94	7	19	mechanism	mechanism	NOUN
j9601z42v94	7	20	in	in	ADP
j9601z42v94	7	21	aln	aln	PROPN
j9601z42v94	7	22	hemts	hemts	PROPN
j9601z42v94	7	23	.	.	PUNCT
j9601z42v94	8	1	in	in	ADP
j9601z42v94	8	2	both	both	DET
j9601z42v94	8	3	depletion	depletion	ADJ
j9601z42v94	8	4	-	-	PUNCT
j9601z42v94	8	5	mode	mode	NOUN
j9601z42v94	8	6	and	and	CCONJ
j9601z42v94	8	7	enhancement	enhancement	NOUN
j9601z42v94	8	8	-	-	PUNCT
j9601z42v94	8	9	mode	mode	NOUN
j9601z42v94	8	10	hemts	hemts	NOUN
j9601z42v94	8	11	with	with	ADP
j9601z42v94	8	12	ultra	ultra	ADJ
j9601z42v94	8	13	-	-	ADJ
j9601z42v94	8	14	scaled	scaled	ADJ
j9601z42v94	8	15	aln	aln	ADJ
j9601z42v94	8	16	barriers	barrier	NOUN
j9601z42v94	8	17	,	,	PUNCT
j9601z42v94	8	18	rsr	rsr	NOUN
j9601z42v94	8	19	scattering	scattering	NOUN
j9601z42v94	8	20	rate	rate	NOUN
j9601z42v94	8	21	is	be	AUX
j9601z42v94	8	22	in	in	ADP
j9601z42v94	8	23	the	the	DET
j9601z42v94	8	24	same	same	ADJ
j9601z42v94	8	25	order	order	NOUN
j9601z42v94	8	26	of	of	ADP
j9601z42v94	8	27	polar	polar	ADJ
j9601z42v94	8	28	optical	optical	ADJ
j9601z42v94	8	29	phonon	phonon	NOUN
j9601z42v94	8	30	scattering	scatter	VERB
j9601z42v94	8	31	rate	rate	NOUN
j9601z42v94	8	32	,	,	PUNCT
j9601z42v94	8	33	which	which	PRON
j9601z42v94	8	34	is	be	AUX
j9601z42v94	8	35	the	the	DET
j9601z42v94	8	36	dominant	dominant	ADJ
j9601z42v94	8	37	scattering	scattering	NOUN
j9601z42v94	8	38	in	in	ADP
j9601z42v94	8	39	hemts	hemts	PROPN
j9601z42v94	8	40	at	at	ADP
j9601z42v94	8	41	room	room	NOUN
j9601z42v94	8	42	temperature	temperature	NOUN
j9601z42v94	8	43	.	.	PUNCT
j9601z42v94	9	1	this	this	PRON
j9601z42v94	9	2	indicates	indicate	VERB
j9601z42v94	9	3	that	that	SCONJ
j9601z42v94	9	4	to	to	PART
j9601z42v94	9	5	achieve	achieve	VERB
j9601z42v94	9	6	high	high	ADJ
j9601z42v94	9	7	-	-	PUNCT
j9601z42v94	9	8	performance	performance	NOUN
j9601z42v94	9	9	hemts	hemts	NOUN
j9601z42v94	9	10	,	,	PUNCT
j9601z42v94	9	11	both	both	CCONJ
j9601z42v94	9	12	high	high	ADJ
j9601z42v94	9	13	-	-	PUNCT
j9601z42v94	9	14	quality	quality	NOUN
j9601z42v94	9	15	growth	growth	NOUN
j9601z42v94	9	16	and	and	CCONJ
j9601z42v94	9	17	processing	processing	NOUN
j9601z42v94	9	18	techniques	technique	NOUN
j9601z42v94	9	19	are	be	AUX
j9601z42v94	9	20	required	require	VERB
j9601z42v94	9	21	.	.	PUNCT
j9601z42v94	10	1	large	large	ADJ
j9601z42v94	10	2	buffer	buffer	NOUN
j9601z42v94	10	3	leakage	leakage	NOUN
j9601z42v94	10	4	and	and	CCONJ
j9601z42v94	10	5	ohmic	ohmic	ADJ
j9601z42v94	10	6	contact	contact	NOUN
j9601z42v94	10	7	resistance	resistance	NOUN
j9601z42v94	10	8	are	be	AUX
j9601z42v94	10	9	two	two	NUM
j9601z42v94	10	10	factors	factor	NOUN
j9601z42v94	10	11	that	that	PRON
j9601z42v94	10	12	heavily	heavily	ADV
j9601z42v94	10	13	degrade	degrade	VERB
j9601z42v94	10	14	high	high	ADJ
j9601z42v94	10	15	-	-	PUNCT
j9601z42v94	10	16	speed	speed	NOUN
j9601z42v94	10	17	device	device	NOUN
j9601z42v94	10	18	performance	performance	NOUN
j9601z42v94	10	19	.	.	PUNCT
j9601z42v94	11	1	with	with	ADP
j9601z42v94	11	2	polarization	polarization	NOUN
j9601z42v94	11	3	engineering	engineering	NOUN
j9601z42v94	11	4	,	,	PUNCT
j9601z42v94	11	5	the	the	DET
j9601z42v94	11	6	first	first	ADJ
j9601z42v94	11	7	dopant	dopant	NOUN
j9601z42v94	11	8	-	-	PUNCT
j9601z42v94	11	9	free	free	ADJ
j9601z42v94	11	10	epitaxial	epitaxial	ADJ
j9601z42v94	11	11	solution	solution	NOUN
j9601z42v94	11	12	for	for	ADP
j9601z42v94	11	13	the	the	DET
j9601z42v94	11	14	buffer	buffer	NOUN
j9601z42v94	11	15	leakage	leakage	NOUN
j9601z42v94	11	16	has	have	AUX
j9601z42v94	11	17	been	be	AUX
j9601z42v94	11	18	developed	develop	VERB
j9601z42v94	11	19	on	on	ADP
j9601z42v94	11	20	semi	semi	ADJ
j9601z42v94	11	21	-	-	ADJ
j9601z42v94	11	22	insulating	insulating	ADJ
j9601z42v94	11	23	gan	gan	NOUN
j9601z42v94	11	24	substrate	substrate	NOUN
j9601z42v94	11	25	.	.	PUNCT
j9601z42v94	12	1	with	with	ADP
j9601z42v94	12	2	1.5	1.5	NUM
j9601z42v94	12	3	nm	nm	NOUN
j9601z42v94	12	4	aln	aln	PROPN
j9601z42v94	12	5	nucleation	nucleation	NOUN
j9601z42v94	12	6	layer	layer	NOUN
j9601z42v94	12	7	grown	grow	VERB
j9601z42v94	12	8	in	in	ADP
j9601z42v94	12	9	the	the	DET
j9601z42v94	12	10	n	n	ADJ
j9601z42v94	12	11	-	-	PUNCT
j9601z42v94	12	12	rich	rich	ADJ
j9601z42v94	12	13	regime	regime	NOUN
j9601z42v94	12	14	,	,	PUNCT
j9601z42v94	12	15	the	the	DET
j9601z42v94	12	16	buffer	buffer	NOUN
j9601z42v94	12	17	leakage	leakage	NOUN
j9601z42v94	12	18	is	be	AUX
j9601z42v94	12	19	greatly	greatly	ADV
j9601z42v94	12	20	reduced	reduce	VERB
j9601z42v94	12	21	and	and	CCONJ
j9601z42v94	12	22	reaches	reach	VERB
j9601z42v94	12	23	1	1	NUM
j9601z42v94	12	24	ma	ma	PROPN
j9601z42v94	12	25	/	/	SYM
j9601z42v94	12	26	mm	mm	PROPN
j9601z42v94	12	27	at	at	ADP
j9601z42v94	12	28	dc	dc	PROPN
j9601z42v94	12	29	bias	bias	NOUN
j9601z42v94	12	30	of	of	ADP
j9601z42v94	12	31	200	200	NUM
j9601z42v94	12	32	v.	v.	ADP
j9601z42v94	12	33	this	this	DET
j9601z42v94	12	34	improvement	improvement	NOUN
j9601z42v94	12	35	increases	increase	VERB
j9601z42v94	12	36	the	the	DET
j9601z42v94	12	37	on	on	ADP
j9601z42v94	12	38	/	/	PUNCT
j9601z42v94	12	39	off	off	ADP
j9601z42v94	12	40	ratio	ratio	NOUN
j9601z42v94	12	41	by	by	ADP
j9601z42v94	12	42	more	more	ADJ
j9601z42v94	12	43	than	than	ADP
j9601z42v94	12	44	4	4	NUM
j9601z42v94	12	45	orders	order	NOUN
j9601z42v94	12	46	of	of	ADP
j9601z42v94	12	47	magnitude	magnitude	NOUN
j9601z42v94	12	48	from	from	ADP
j9601z42v94	12	49	100	100	NUM
j9601z42v94	12	50	to	to	PART
j9601z42v94	12	51	1e6	1e6	NUM
j9601z42v94	12	52	.	.	PUNCT
j9601z42v94	13	1	band	band	NOUN
j9601z42v94	13	2	diagram	diagram	PROPN
j9601z42v94	13	3	engineering	engineering	PROPN
j9601z42v94	13	4	is	be	AUX
j9601z42v94	13	5	applied	apply	VERB
j9601z42v94	13	6	in	in	ADP
j9601z42v94	13	7	ohmic	ohmic	ADJ
j9601z42v94	13	8	contact	contact	NOUN
j9601z42v94	13	9	study	study	NOUN
j9601z42v94	13	10	.	.	PUNCT
j9601z42v94	14	1	due	due	ADP
j9601z42v94	14	2	to	to	ADP
j9601z42v94	14	3	the	the	DET
j9601z42v94	14	4	high	high	ADJ
j9601z42v94	14	5	barrier	barrier	NOUN
j9601z42v94	14	6	thickness	thickness	NOUN
j9601z42v94	14	7	,	,	PUNCT
j9601z42v94	14	8	it	it	PRON
j9601z42v94	14	9	is	be	AUX
j9601z42v94	14	10	very	very	ADV
j9601z42v94	14	11	hard	hard	ADJ
j9601z42v94	14	12	to	to	PART
j9601z42v94	14	13	achieve	achieve	VERB
j9601z42v94	14	14	ohmic	ohmic	ADJ
j9601z42v94	14	15	contact	contact	NOUN
j9601z42v94	14	16	less	less	ADJ
j9601z42v94	14	17	than	than	ADP
j9601z42v94	14	18	1	1	NUM
j9601z42v94	14	19	ohm	ohm	NOUN
j9601z42v94	14	20	-	-	PUNCT
j9601z42v94	14	21	mm	mm	NOUN
j9601z42v94	14	22	with	with	ADP
j9601z42v94	14	23	traditional	traditional	ADJ
j9601z42v94	14	24	annealing	annealing	NOUN
j9601z42v94	14	25	technique	technique	NOUN
j9601z42v94	14	26	.	.	PUNCT
j9601z42v94	15	1	regrown	regrown	VERB
j9601z42v94	15	2	silicon	silicon	NOUN
j9601z42v94	15	3	doped	doped	NOUN
j9601z42v94	15	4	gan	gan	PROPN
j9601z42v94	15	5	and	and	CCONJ
j9601z42v94	15	6	graded	grade	VERB
j9601z42v94	15	7	ingan	ingan	PROPN
j9601z42v94	15	8	/	/	SYM
j9601z42v94	15	9	inn	inn	PROPN
j9601z42v94	15	10	contacts	contact	NOUN
j9601z42v94	15	11	have	have	AUX
j9601z42v94	15	12	been	be	AUX
j9601z42v94	15	13	demonstrated	demonstrate	VERB
j9601z42v94	15	14	.	.	PUNCT
j9601z42v94	16	1	contact	contact	NOUN
j9601z42v94	16	2	resistance	resistance	NOUN
j9601z42v94	16	3	as	as	ADV
j9601z42v94	16	4	low	low	ADJ
j9601z42v94	16	5	as	as	SCONJ
j9601z42v94	16	6	~0.4	~0.4	PROPN
j9601z42v94	16	7	ohm	ohm	PROPN
j9601z42v94	16	8	-	-	PUNCT
j9601z42v94	16	9	mm	mm	PROPN
j9601z42v94	16	10	has	have	AUX
j9601z42v94	16	11	been	be	AUX
j9601z42v94	16	12	achieved	achieve	VERB
j9601z42v94	16	13	with	with	ADP
j9601z42v94	16	14	n	n	CCONJ
j9601z42v94	16	15	-	-	PUNCT
j9601z42v94	16	16	gan	gan	ADJ
j9601z42v94	16	17	regrowth	regrowth	NOUN
j9601z42v94	16	18	.	.	PUNCT
j9601z42v94	17	1	mbe	mbe	PROPN
j9601z42v94	17	2	growth	growth	NOUN
j9601z42v94	17	3	for	for	ADP
j9601z42v94	17	4	graded	grade	VERB
j9601z42v94	17	5	ingan	ingan	PROPN
j9601z42v94	17	6	/	/	SYM
j9601z42v94	17	7	inn	inn	PROPN
j9601z42v94	17	8	has	have	AUX
j9601z42v94	17	9	been	be	AUX
j9601z42v94	17	10	developed	develop	VERB
j9601z42v94	17	11	.	.	PUNCT
j9601z42v94	18	1	x	x	X
j9601z42v94	18	2	-	-	NOUN
j9601z42v94	18	3	ray	ray	NOUN
j9601z42v94	18	4	diffraction	diffraction	NOUN
j9601z42v94	18	5	measurements	measurement	NOUN
j9601z42v94	18	6	have	have	AUX
j9601z42v94	18	7	been	be	AUX
j9601z42v94	18	8	performed	perform	VERB
j9601z42v94	18	9	for	for	ADP
j9601z42v94	18	10	material	material	ADJ
j9601z42v94	18	11	characterization	characterization	NOUN
j9601z42v94	18	12	.	.	PUNCT