id	sid	tid	token	lemma	pos
m326m041v4b	1	1	power	power	NOUN
m326m041v4b	1	2	dissipation	dissipation	NOUN
m326m041v4b	1	3	is	be	AUX
m326m041v4b	1	4	one	one	NUM
m326m041v4b	1	5	of	of	ADP
m326m041v4b	1	6	the	the	DET
m326m041v4b	1	7	most	most	ADV
m326m041v4b	1	8	challenging	challenging	ADJ
m326m041v4b	1	9	factors	factor	NOUN
m326m041v4b	1	10	for	for	ADP
m326m041v4b	1	11	continued	continue	VERB
m326m041v4b	1	12	semiconductor	semiconductor	NOUN
m326m041v4b	1	13	transistor	transistor	NOUN
m326m041v4b	1	14	scaling	scaling	NOUN
m326m041v4b	1	15	in	in	ADP
m326m041v4b	1	16	the	the	DET
m326m041v4b	1	17	evolution	evolution	NOUN
m326m041v4b	1	18	of	of	ADP
m326m041v4b	1	19	integrated	integrated	ADJ
m326m041v4b	1	20	circuits	circuit	NOUN
m326m041v4b	1	21	.	.	PUNCT
m326m041v4b	2	1	the	the	DET
m326m041v4b	2	2	heat	heat	NOUN
m326m041v4b	2	3	generation	generation	NOUN
m326m041v4b	2	4	due	due	ADP
m326m041v4b	2	5	to	to	ADP
m326m041v4b	2	6	large	large	ADJ
m326m041v4b	2	7	power	power	NOUN
m326m041v4b	2	8	dissipation	dissipation	NOUN
m326m041v4b	2	9	density	density	NOUN
m326m041v4b	2	10	restricts	restrict	VERB
m326m041v4b	2	11	the	the	DET
m326m041v4b	2	12	device	device	NOUN
m326m041v4b	2	13	scaling	scale	VERB
m326m041v4b	2	14	in	in	ADP
m326m041v4b	2	15	integrated	integrate	VERB
m326m041v4b	2	16	circuits	circuit	NOUN
m326m041v4b	2	17	(	(	PUNCT
m326m041v4b	2	18	ics	ics	X
m326m041v4b	2	19	)	)	PUNCT
m326m041v4b	2	20	.	.	PUNCT
m326m041v4b	3	1	to	to	PART
m326m041v4b	3	2	circumvent	circumvent	VERB
m326m041v4b	3	3	this	this	DET
m326m041v4b	3	4	power	power	NOUN
m326m041v4b	3	5	crisis	crisis	NOUN
m326m041v4b	3	6	in	in	ADP
m326m041v4b	3	7	ics	ics	PROPN
m326m041v4b	3	8	,	,	PUNCT
m326m041v4b	3	9	it	it	PRON
m326m041v4b	3	10	requires	require	VERB
m326m041v4b	3	11	exploring	explore	VERB
m326m041v4b	3	12	new	new	ADJ
m326m041v4b	3	13	device	device	NOUN
m326m041v4b	3	14	structures	structure	NOUN
m326m041v4b	3	15	and	and	CCONJ
m326m041v4b	3	16	operating	operating	NOUN
m326m041v4b	3	17	principles	principle	NOUN
m326m041v4b	3	18	.	.	PUNCT
m326m041v4b	4	1	the	the	DET
m326m041v4b	4	2	goal	goal	NOUN
m326m041v4b	4	3	is	be	AUX
m326m041v4b	4	4	to	to	PART
m326m041v4b	4	5	design	design	VERB
m326m041v4b	4	6	transistor	transistor	NOUN
m326m041v4b	4	7	switch	switch	NOUN
m326m041v4b	4	8	in	in	ADP
m326m041v4b	4	9	a	a	DET
m326m041v4b	4	10	way	way	NOUN
m326m041v4b	4	11	that	that	PRON
m326m041v4b	4	12	the	the	DET
m326m041v4b	4	13	device	device	NOUN
m326m041v4b	4	14	dissipates	dissipate	VERB
m326m041v4b	4	15	less	less	ADJ
m326m041v4b	4	16	power	power	NOUN
m326m041v4b	4	17	during	during	ADP
m326m041v4b	4	18	logic	logic	NOUN
m326m041v4b	4	19	operation	operation	NOUN
m326m041v4b	4	20	than	than	ADP
m326m041v4b	4	21	conventional	conventional	ADJ
m326m041v4b	4	22	fets	fet	NOUN
m326m041v4b	4	23	,	,	PUNCT
m326m041v4b	4	24	bjts	bjts	PROPN
m326m041v4b	4	25	.	.	PUNCT
m326m041v4b	5	1	to	to	PART
m326m041v4b	5	2	meet	meet	VERB
m326m041v4b	5	3	this	this	DET
m326m041v4b	5	4	requirement	requirement	NOUN
m326m041v4b	5	5	,	,	PUNCT
m326m041v4b	5	6	it	it	PRON
m326m041v4b	5	7	has	have	AUX
m326m041v4b	5	8	been	be	AUX
m326m041v4b	5	9	suggested	suggest	VERB
m326m041v4b	5	10	to	to	PART
m326m041v4b	5	11	reduce	reduce	VERB
m326m041v4b	5	12	the	the	DET
m326m041v4b	5	13	subthreshold	subthreshold	ADJ
m326m041v4b	5	14	slope	slope	NOUN
m326m041v4b	5	15	of	of	ADP
m326m041v4b	5	16	a	a	DET
m326m041v4b	5	17	transistor	transistor	NOUN
m326m041v4b	5	18	below	below	ADP
m326m041v4b	5	19	the	the	DET
m326m041v4b	5	20	room	room	NOUN
m326m041v4b	5	21	temperature	temperature	NOUN
m326m041v4b	5	22	boltzmann	boltzmann	PROPN
m326m041v4b	5	23	limit	limit	PROPN
m326m041v4b	5	24	of	of	ADP
m326m041v4b	5	25	60	60	NUM
m326m041v4b	5	26	mv	mv	PROPN
m326m041v4b	5	27	/	/	SYM
m326m041v4b	5	28	decade	decade	NOUN
m326m041v4b	5	29	.	.	PUNCT
m326m041v4b	6	1	here	here	ADV
m326m041v4b	6	2	,	,	PUNCT
m326m041v4b	6	3	we	we	PRON
m326m041v4b	6	4	propose	propose	VERB
m326m041v4b	6	5	and	and	CCONJ
m326m041v4b	6	6	analyze	analyze	VERB
m326m041v4b	6	7	two	two	NUM
m326m041v4b	6	8	methods	method	NOUN
m326m041v4b	6	9	for	for	ADP
m326m041v4b	6	10	the	the	DET
m326m041v4b	6	11	reduction	reduction	NOUN
m326m041v4b	6	12	of	of	ADP
m326m041v4b	6	13	energy	energy	NOUN
m326m041v4b	6	14	dissipation	dissipation	NOUN
m326m041v4b	6	15	in	in	ADP
m326m041v4b	6	16	logic	logic	NOUN
m326m041v4b	6	17	applications	application	NOUN
m326m041v4b	6	18	.	.	PUNCT
m326m041v4b	7	1	the	the	DET
m326m041v4b	7	2	first	first	ADJ
m326m041v4b	7	3	is	be	AUX
m326m041v4b	7	4	a	a	DET
m326m041v4b	7	5	steep	steep	ADJ
m326m041v4b	7	6	subthreshold	subthreshold	ADJ
m326m041v4b	7	7	slope	slope	NOUN
m326m041v4b	7	8	(	(	PUNCT
m326m041v4b	7	9	<	<	X
m326m041v4b	7	10	60	60	NUM
m326m041v4b	7	11	mv	mv	PROPN
m326m041v4b	7	12	/	/	SYM
m326m041v4b	7	13	decade	decade	NOUN
m326m041v4b	7	14	)	)	PUNCT
m326m041v4b	7	15	transistor	transistor	NOUN
m326m041v4b	7	16	using	use	VERB
m326m041v4b	7	17	a	a	DET
m326m041v4b	7	18	piezoelectric	piezoelectric	ADJ
m326m041v4b	7	19	gate	gate	NOUN
m326m041v4b	7	20	barrier	barrier	NOUN
m326m041v4b	7	21	for	for	ADP
m326m041v4b	7	22	low	low	ADJ
m326m041v4b	7	23	-	-	PUNCT
m326m041v4b	7	24	power	power	NOUN
m326m041v4b	7	25	switching	switching	NOUN
m326m041v4b	7	26	.	.	PUNCT
m326m041v4b	8	1	the	the	DET
m326m041v4b	8	2	second	second	ADJ
m326m041v4b	8	3	is	be	AUX
m326m041v4b	8	4	a	a	DET
m326m041v4b	8	5	reduction	reduction	NOUN
m326m041v4b	8	6	of	of	ADP
m326m041v4b	8	7	energy	energy	NOUN
m326m041v4b	8	8	dissipation	dissipation	NOUN
m326m041v4b	8	9	based	base	VERB
m326m041v4b	8	10	on	on	ADP
m326m041v4b	8	11	energy	energy	NOUN
m326m041v4b	8	12	-	-	PUNCT
m326m041v4b	8	13	conserving	conserve	VERB
m326m041v4b	8	14	resonant	resonant	NOUN
m326m041v4b	8	15	switching	switching	NOUN
m326m041v4b	8	16	in	in	ADP
m326m041v4b	8	17	conventional	conventional	ADJ
m326m041v4b	8	18	circuits	circuit	NOUN
m326m041v4b	8	19	/	/	SYM
m326m041v4b	8	20	systems	system	NOUN
m326m041v4b	8	21	.	.	PUNCT
m326m041v4b	9	1	in	in	ADP
m326m041v4b	9	2	particular	particular	ADJ
m326m041v4b	9	3	,	,	PUNCT
m326m041v4b	9	4	we	we	PRON
m326m041v4b	9	5	propose	propose	VERB
m326m041v4b	9	6	a	a	DET
m326m041v4b	9	7	novel	novel	ADJ
m326m041v4b	9	8	method	method	NOUN
m326m041v4b	9	9	for	for	ADP
m326m041v4b	9	10	realizing	realize	VERB
m326m041v4b	9	11	a	a	DET
m326m041v4b	9	12	steep	steep	ADJ
m326m041v4b	9	13	transistor	transistor	NOUN
m326m041v4b	9	14	switch	switch	NOUN
m326m041v4b	9	15	using	use	VERB
m326m041v4b	9	16	the	the	DET
m326m041v4b	9	17	negative	negative	ADJ
m326m041v4b	9	18	differential	differential	ADJ
m326m041v4b	9	19	capacitance	capacitance	NOUN
m326m041v4b	9	20	(	(	PUNCT
m326m041v4b	9	21	ndc	ndc	PROPN
m326m041v4b	9	22	)	)	PUNCT
m326m041v4b	9	23	of	of	ADP
m326m041v4b	9	24	a	a	DET
m326m041v4b	9	25	compliant	compliant	ADJ
m326m041v4b	9	26	piezoelectric	piezoelectric	ADJ
m326m041v4b	9	27	gate	gate	NOUN
m326m041v4b	9	28	barrier	barrier	NOUN
m326m041v4b	9	29	.	.	PUNCT
m326m041v4b	10	1	this	this	DET
m326m041v4b	10	2	effect	effect	NOUN
m326m041v4b	10	3	exploits	exploit	VERB
m326m041v4b	10	4	electric	electric	ADJ
m326m041v4b	10	5	field	field	NOUN
m326m041v4b	10	6	induced	induce	VERB
m326m041v4b	10	7	electrostriction	electrostriction	NOUN
m326m041v4b	10	8	when	when	SCONJ
m326m041v4b	10	9	nanoscale	nanoscale	PROPN
m326m041v4b	10	10	piezoelectrics	piezoelectric	NOUN
m326m041v4b	10	11	are	be	AUX
m326m041v4b	10	12	used	use	VERB
m326m041v4b	10	13	as	as	ADP
m326m041v4b	10	14	the	the	DET
m326m041v4b	10	15	active	active	ADJ
m326m041v4b	10	16	gate	gate	NOUN
m326m041v4b	10	17	barriers	barrier	NOUN
m326m041v4b	10	18	of	of	ADP
m326m041v4b	10	19	transistors	transistor	NOUN
m326m041v4b	10	20	.	.	PUNCT
m326m041v4b	11	1	electrostriction	electrostriction	PROPN
m326m041v4b	11	2	leads	lead	VERB
m326m041v4b	11	3	to	to	ADP
m326m041v4b	11	4	a	a	DET
m326m041v4b	11	5	modulation	modulation	NOUN
m326m041v4b	11	6	of	of	ADP
m326m041v4b	11	7	layer	layer	NOUN
m326m041v4b	11	8	thickness	thickness	NOUN
m326m041v4b	11	9	under	under	ADP
m326m041v4b	11	10	the	the	DET
m326m041v4b	11	11	application	application	NOUN
m326m041v4b	11	12	of	of	ADP
m326m041v4b	11	13	voltage	voltage	NOUN
m326m041v4b	11	14	across	across	ADP
m326m041v4b	11	15	the	the	DET
m326m041v4b	11	16	piezoelectric	piezoelectric	ADJ
m326m041v4b	11	17	layer	layer	NOUN
m326m041v4b	11	18	.	.	PUNCT
m326m041v4b	12	1	piezoelectricity	piezoelectricity	NOUN
m326m041v4b	12	2	and	and	CCONJ
m326m041v4b	12	3	electrostriction	electrostriction	NOUN
m326m041v4b	12	4	in	in	ADP
m326m041v4b	12	5	a	a	DET
m326m041v4b	12	6	piezoelectric	piezoelectric	ADJ
m326m041v4b	12	7	barrier	barrier	NOUN
m326m041v4b	12	8	combine	combine	VERB
m326m041v4b	12	9	to	to	PART
m326m041v4b	12	10	provide	provide	VERB
m326m041v4b	12	11	negative	negative	ADJ
m326m041v4b	12	12	differential	differential	ADJ
m326m041v4b	12	13	capacitance	capacitance	NOUN
m326m041v4b	12	14	(	(	PUNCT
m326m041v4b	12	15	ndc	ndc	PROPN
m326m041v4b	12	16	)	)	PUNCT
m326m041v4b	12	17	with	with	ADP
m326m041v4b	12	18	internal	internal	ADJ
m326m041v4b	12	19	charge	charge	NOUN
m326m041v4b	12	20	amplification	amplification	NOUN
m326m041v4b	12	21	.	.	PUNCT
m326m041v4b	13	1	the	the	DET
m326m041v4b	13	2	effect	effect	NOUN
m326m041v4b	13	3	of	of	ADP
m326m041v4b	13	4	the	the	DET
m326m041v4b	13	5	ndc	ndc	NOUN
m326m041v4b	13	6	in	in	ADP
m326m041v4b	13	7	the	the	DET
m326m041v4b	13	8	gate	gate	NOUN
m326m041v4b	13	9	capacitor	capacitor	NOUN
m326m041v4b	13	10	of	of	ADP
m326m041v4b	13	11	a	a	DET
m326m041v4b	13	12	fet	fet	NOUN
m326m041v4b	13	13	is	be	AUX
m326m041v4b	13	14	to	to	PART
m326m041v4b	13	15	boost	boost	VERB
m326m041v4b	13	16	the	the	DET
m326m041v4b	13	17	on	on	ADP
m326m041v4b	13	18	-	-	PUNCT
m326m041v4b	13	19	current	current	ADJ
m326m041v4b	13	20	,	,	PUNCT
m326m041v4b	13	21	and	and	CCONJ
m326m041v4b	13	22	to	to	PART
m326m041v4b	13	23	provide	provide	VERB
m326m041v4b	13	24	an	an	DET
m326m041v4b	13	25	opportunity	opportunity	NOUN
m326m041v4b	13	26	for	for	ADP
m326m041v4b	13	27	switching	switch	VERB
m326m041v4b	13	28	steeper	steep	ADJ
m326m041v4b	13	29	than	than	ADP
m326m041v4b	13	30	the	the	DET
m326m041v4b	13	31	60	60	NUM
m326m041v4b	13	32	mv	mv	PROPN
m326m041v4b	13	33	/	/	SYM
m326m041v4b	13	34	decade	decade	NOUN
m326m041v4b	13	35	boltzmann	boltzmann	PROPN
m326m041v4b	13	36	limit	limit	NOUN
m326m041v4b	13	37	.	.	PUNCT
m326m041v4b	14	1	to	to	PART
m326m041v4b	14	2	show	show	VERB
m326m041v4b	14	3	this	this	DET
m326m041v4b	14	4	effect	effect	NOUN
m326m041v4b	14	5	,	,	PUNCT
m326m041v4b	14	6	we	we	PRON
m326m041v4b	14	7	first	first	ADV
m326m041v4b	14	8	physically	physically	ADV
m326m041v4b	14	9	analyze	analyze	VERB
m326m041v4b	14	10	and	and	CCONJ
m326m041v4b	14	11	quantitatively	quantitatively	ADV
m326m041v4b	14	12	develop	develop	VERB
m326m041v4b	14	13	the	the	DET
m326m041v4b	14	14	electromechanical	electromechanical	ADJ
m326m041v4b	14	15	piezoelectric	piezoelectric	ADJ
m326m041v4b	14	16	capacitor	capacitor	NOUN
m326m041v4b	14	17	using	use	VERB
m326m041v4b	14	18	the	the	DET
m326m041v4b	14	19	gauss	gauss	NOUN
m326m041v4b	14	20	'	'	PART
m326m041v4b	14	21	law	law	NOUN
m326m041v4b	14	22	electrostatics	electrostatic	NOUN
m326m041v4b	14	23	.	.	PUNCT
m326m041v4b	15	1	owing	owe	VERB
m326m041v4b	15	2	to	to	ADP
m326m041v4b	15	3	this	this	DET
m326m041v4b	15	4	physical	physical	ADJ
m326m041v4b	15	5	mechanism	mechanism	NOUN
m326m041v4b	15	6	,	,	PUNCT
m326m041v4b	15	7	we	we	PRON
m326m041v4b	15	8	show	show	VERB
m326m041v4b	15	9	that	that	SCONJ
m326m041v4b	15	10	there	there	PRON
m326m041v4b	15	11	are	be	VERB
m326m041v4b	15	12	regimes	regime	NOUN
m326m041v4b	15	13	in	in	ADP
m326m041v4b	15	14	the	the	DET
m326m041v4b	15	15	charge	charge	NOUN
m326m041v4b	15	16	-	-	PUNCT
m326m041v4b	15	17	vs.-voltage	vs.-voltage	NOUN
m326m041v4b	15	18	characteristics	characteristic	NOUN
m326m041v4b	15	19	of	of	ADP
m326m041v4b	15	20	piezoelectric	piezoelectric	ADJ
m326m041v4b	15	21	capacitor	capacitor	NOUN
m326m041v4b	15	22	where	where	SCONJ
m326m041v4b	15	23	the	the	DET
m326m041v4b	15	24	capacitance	capacitance	NOUN
m326m041v4b	15	25	becomes	become	VERB
m326m041v4b	15	26	negative	negative	ADJ
m326m041v4b	15	27	.	.	PUNCT
m326m041v4b	16	1	by	by	ADP
m326m041v4b	16	2	porting	port	VERB
m326m041v4b	16	3	the	the	DET
m326m041v4b	16	4	negative	negative	ADJ
m326m041v4b	16	5	capacitance	capacitance	NOUN
m326m041v4b	16	6	of	of	ADP
m326m041v4b	16	7	a	a	DET
m326m041v4b	16	8	piezoelectric	piezoelectric	ADJ
m326m041v4b	16	9	barrier	barrier	NOUN
m326m041v4b	16	10	in	in	ADP
m326m041v4b	16	11	the	the	DET
m326m041v4b	16	12	gate	gate	NOUN
m326m041v4b	16	13	capacitor	capacitor	NOUN
m326m041v4b	16	14	of	of	ADP
m326m041v4b	16	15	a	a	DET
m326m041v4b	16	16	transistor	transistor	NOUN
m326m041v4b	16	17	,	,	PUNCT
m326m041v4b	16	18	the	the	DET
m326m041v4b	16	19	total	total	ADJ
m326m041v4b	16	20	gate	gate	NOUN
m326m041v4b	16	21	capacitance	capacitance	NOUN
m326m041v4b	16	22	is	be	AUX
m326m041v4b	16	23	expected	expect	VERB
m326m041v4b	16	24	to	to	PART
m326m041v4b	16	25	be	be	AUX
m326m041v4b	16	26	enhanced	enhance	VERB
m326m041v4b	16	27	as	as	ADP
m326m041v4b	16	28	a	a	DET
m326m041v4b	16	29	result	result	NOUN
m326m041v4b	16	30	of	of	ADP
m326m041v4b	16	31	piezoelectric	piezoelectric	ADJ
m326m041v4b	16	32	charge	charge	NOUN
m326m041v4b	16	33	amplification	amplification	NOUN
m326m041v4b	16	34	.	.	PUNCT
m326m041v4b	17	1	this	this	DET
m326m041v4b	17	2	enhanced	enhanced	ADJ
m326m041v4b	17	3	gate	gate	NOUN
m326m041v4b	17	4	capacitance	capacitance	NOUN
m326m041v4b	17	5	leads	lead	VERB
m326m041v4b	17	6	to	to	ADP
m326m041v4b	17	7	a	a	DET
m326m041v4b	17	8	boost	boost	NOUN
m326m041v4b	17	9	in	in	ADP
m326m041v4b	17	10	the	the	DET
m326m041v4b	17	11	on	on	ADP
m326m041v4b	17	12	-	-	PUNCT
m326m041v4b	17	13	current	current	NOUN
m326m041v4b	17	14	of	of	ADP
m326m041v4b	17	15	the	the	DET
m326m041v4b	17	16	transistor	transistor	NOUN
m326m041v4b	17	17	.	.	PUNCT
m326m041v4b	18	1	also	also	ADV
m326m041v4b	18	2	by	by	ADP
m326m041v4b	18	3	exploiting	exploit	VERB
m326m041v4b	18	4	the	the	DET
m326m041v4b	18	5	negative	negative	ADJ
m326m041v4b	18	6	capacitance	capacitance	NOUN
m326m041v4b	18	7	of	of	ADP
m326m041v4b	18	8	a	a	DET
m326m041v4b	18	9	highly	highly	ADV
m326m041v4b	18	10	compliant	compliant	ADJ
m326m041v4b	18	11	piezoelectric	piezoelectric	ADJ
m326m041v4b	18	12	barrier	barrier	NOUN
m326m041v4b	18	13	in	in	ADP
m326m041v4b	18	14	the	the	DET
m326m041v4b	18	15	subthreshold	subthreshold	ADJ
m326m041v4b	18	16	regime	regime	NOUN
m326m041v4b	18	17	of	of	ADP
m326m041v4b	18	18	a	a	DET
m326m041v4b	18	19	transistor	transistor	NOUN
m326m041v4b	18	20	,	,	PUNCT
m326m041v4b	18	21	the	the	DET
m326m041v4b	18	22	sub	sub	ADJ
m326m041v4b	18	23	-	-	ADJ
m326m041v4b	18	24	threshold	threshold	ADJ
m326m041v4b	18	25	slope	slope	NOUN
m326m041v4b	18	26	(	(	PUNCT
m326m041v4b	18	27	ss	ss	NOUN
m326m041v4b	18	28	)	)	PUNCT
m326m041v4b	18	29	could	could	AUX
m326m041v4b	18	30	possibly	possibly	ADV
m326m041v4b	18	31	be	be	AUX
m326m041v4b	18	32	reduced	reduce	VERB
m326m041v4b	18	33	below	below	ADP
m326m041v4b	18	34	60	60	NUM
m326m041v4b	18	35	mv	mv	PROPN
m326m041v4b	18	36	/	/	SYM
m326m041v4b	18	37	decade	decade	NOUN
m326m041v4b	18	38	of	of	ADP
m326m041v4b	18	39	the	the	DET
m326m041v4b	18	40	transistor	transistor	NOUN
m326m041v4b	18	41	.	.	PUNCT
m326m041v4b	19	1	to	to	PART
m326m041v4b	19	2	design	design	VERB
m326m041v4b	19	3	the	the	DET
m326m041v4b	19	4	transistor	transistor	NOUN
m326m041v4b	19	5	switch	switch	NOUN
m326m041v4b	19	6	,	,	PUNCT
m326m041v4b	19	7	we	we	PRON
m326m041v4b	19	8	quantitatively	quantitatively	ADV
m326m041v4b	19	9	analyze	analyze	VERB
m326m041v4b	19	10	carrier	carrier	NOUN
m326m041v4b	19	11	transport	transport	NOUN
m326m041v4b	19	12	properties	property	NOUN
m326m041v4b	19	13	based	base	VERB
m326m041v4b	19	14	on	on	ADP
m326m041v4b	19	15	different	different	ADJ
m326m041v4b	19	16	scattering	scattering	NOUN
m326m041v4b	19	17	mechanisms	mechanism	NOUN
m326m041v4b	19	18	in	in	ADP
m326m041v4b	19	19	various	various	ADJ
m326m041v4b	19	20	semiconductor	semiconductor	NOUN
m326m041v4b	19	21	channel	channel	NOUN
m326m041v4b	19	22	materials	material	NOUN
m326m041v4b	19	23	such	such	ADJ
m326m041v4b	19	24	as	as	ADP
m326m041v4b	19	25	iii	iii	NUM
m326m041v4b	19	26	-	-	PUNCT
m326m041v4b	19	27	v	v	NOUN
m326m041v4b	19	28	semiconductors	semiconductor	NOUN
m326m041v4b	19	29	,	,	PUNCT
m326m041v4b	19	30	and	and	CCONJ
m326m041v4b	19	31	heterostructures	heterostructure	NOUN
m326m041v4b	19	32	.	.	PUNCT
m326m041v4b	20	1	we	we	PRON
m326m041v4b	20	2	also	also	ADV
m326m041v4b	20	3	developed	develop	VERB
m326m041v4b	20	4	compact	compact	ADJ
m326m041v4b	20	5	models	model	NOUN
m326m041v4b	20	6	for	for	ADP
m326m041v4b	20	7	iii	iii	NUM
m326m041v4b	20	8	-	-	PUNCT
m326m041v4b	20	9	nitride	nitride	NOUN
m326m041v4b	20	10	hemts	hemts	PROPN
m326m041v4b	20	11	incorporating	incorporate	VERB
m326m041v4b	20	12	polarization	polarization	NOUN
m326m041v4b	20	13	charge	charge	NOUN
m326m041v4b	20	14	to	to	PART
m326m041v4b	20	15	calculate	calculate	VERB
m326m041v4b	20	16	transistor	transistor	NOUN
m326m041v4b	20	17	characteristics	characteristic	NOUN
m326m041v4b	20	18	,	,	PUNCT
m326m041v4b	20	19	and	and	CCONJ
m326m041v4b	20	20	device	device	NOUN
m326m041v4b	20	21	parameters	parameter	NOUN
m326m041v4b	20	22	.	.	PUNCT
m326m041v4b	21	1	using	use	VERB
m326m041v4b	21	2	the	the	DET
m326m041v4b	21	3	transistor	transistor	NOUN
m326m041v4b	21	4	switches	switch	NOUN
m326m041v4b	21	5	,	,	PUNCT
m326m041v4b	21	6	we	we	PRON
m326m041v4b	21	7	investigate	investigate	VERB
m326m041v4b	21	8	and	and	CCONJ
m326m041v4b	21	9	analyze	analyze	VERB
m326m041v4b	21	10	energy	energy	NOUN
m326m041v4b	21	11	dissipation	dissipation	NOUN
m326m041v4b	21	12	in	in	ADP
m326m041v4b	21	13	conventional	conventional	ADJ
m326m041v4b	21	14	cmos	cmos	NOUN
m326m041v4b	21	15	circuits	circuit	NOUN
m326m041v4b	21	16	/	/	SYM
m326m041v4b	21	17	systems	system	NOUN
m326m041v4b	21	18	.	.	PUNCT
m326m041v4b	22	1	finally	finally	ADV
m326m041v4b	22	2	,	,	PUNCT
m326m041v4b	22	3	we	we	PRON
m326m041v4b	22	4	propose	propose	VERB
m326m041v4b	22	5	a	a	DET
m326m041v4b	22	6	mechanism	mechanism	NOUN
m326m041v4b	22	7	for	for	ADP
m326m041v4b	22	8	the	the	DET
m326m041v4b	22	9	reduction	reduction	NOUN
m326m041v4b	22	10	of	of	ADP
m326m041v4b	22	11	energy	energy	NOUN
m326m041v4b	22	12	dissipation	dissipation	NOUN
m326m041v4b	22	13	based	base	VERB
m326m041v4b	22	14	on	on	ADP
m326m041v4b	22	15	energy	energy	NOUN
m326m041v4b	22	16	-	-	PUNCT
m326m041v4b	22	17	recovery	recovery	NOUN
m326m041v4b	22	18	resonant	resonant	NOUN
m326m041v4b	22	19	switching	switch	VERB
m326m041v4b	22	20	by	by	ADP
m326m041v4b	22	21	conserving	conserve	VERB
m326m041v4b	22	22	energy	energy	NOUN
m326m041v4b	22	23	in	in	ADP
m326m041v4b	22	24	the	the	DET
m326m041v4b	22	25	circuit	circuit	NOUN
m326m041v4b	22	26	/	/	SYM
m326m041v4b	22	27	system	system	NOUN
m326m041v4b	22	28	.	.	PUNCT
m326m041v4b	23	1	in	in	ADP
m326m041v4b	23	2	this	this	DET
m326m041v4b	23	3	approach	approach	NOUN
m326m041v4b	23	4	,	,	PUNCT
m326m041v4b	23	5	the	the	DET
m326m041v4b	23	6	dissipated	dissipate	VERB
m326m041v4b	23	7	energy	energy	NOUN
m326m041v4b	23	8	to	to	PART
m326m041v4b	23	9	heat	heat	VERB
m326m041v4b	23	10	at	at	ADP
m326m041v4b	23	11	each	each	DET
m326m041v4b	23	12	switching	switching	NOUN
m326m041v4b	23	13	event	event	NOUN
m326m041v4b	23	14	is	be	AUX
m326m041v4b	23	15	recovered	recover	VERB
m326m041v4b	23	16	through	through	ADP
m326m041v4b	23	17	the	the	DET
m326m041v4b	23	18	controlled	control	VERB
m326m041v4b	23	19	resonant	resonant	NOUN
m326m041v4b	23	20	switching	switching	NOUN
m326m041v4b	23	21	and	and	CCONJ
m326m041v4b	23	22	stored	store	VERB
m326m041v4b	23	23	in	in	ADP
m326m041v4b	23	24	an	an	DET
m326m041v4b	23	25	energy	energy	NOUN
m326m041v4b	23	26	-	-	PUNCT
m326m041v4b	23	27	recovery	recovery	NOUN
m326m041v4b	23	28	storage	storage	NOUN
m326m041v4b	23	29	capacitor	capacitor	NOUN
m326m041v4b	23	30	for	for	ADP
m326m041v4b	23	31	later	later	ADJ
m326m041v4b	23	32	use	use	NOUN
m326m041v4b	23	33	in	in	ADP
m326m041v4b	23	34	logic	logic	ADJ
m326m041v4b	23	35	computation	computation	NOUN
m326m041v4b	23	36	.	.	PUNCT
m326m041v4b	24	1	this	this	DET
m326m041v4b	24	2	proposed	propose	VERB
m326m041v4b	24	3	mechanism	mechanism	NOUN
m326m041v4b	24	4	in	in	ADP
m326m041v4b	24	5	circuits	circuit	NOUN
m326m041v4b	24	6	is	be	AUX
m326m041v4b	24	7	useful	useful	ADJ
m326m041v4b	24	8	for	for	ADP
m326m041v4b	24	9	developing	develop	VERB
m326m041v4b	24	10	energy	energy	NOUN
m326m041v4b	24	11	-	-	PUNCT
m326m041v4b	24	12	efficient	efficient	ADJ
m326m041v4b	24	13	systems	system	NOUN
m326m041v4b	24	14	such	such	ADJ
m326m041v4b	24	15	as	as	ADP
m326m041v4b	24	16	low	low	ADJ
m326m041v4b	24	17	-	-	PUNCT
m326m041v4b	24	18	power	power	NOUN
m326m041v4b	24	19	clocking	clocking	NOUN
m326m041v4b	24	20	,	,	PUNCT
m326m041v4b	24	21	driving	drive	VERB
m326m041v4b	24	22	in	in	ADP
m326m041v4b	24	23	large	large	ADJ
m326m041v4b	24	24	-	-	PUNCT
m326m041v4b	24	25	area	area	NOUN
m326m041v4b	24	26	displays	display	NOUN
m326m041v4b	24	27	,	,	PUNCT
m326m041v4b	24	28	and	and	CCONJ
m326m041v4b	24	29	interfacing	interface	VERB
m326m041v4b	24	30	circuitry	circuitry	NOUN
m326m041v4b	24	31	etc	etc	X
m326m041v4b	24	32	.	.	PUNCT
m326m041v4b	25	1	the	the	DET
m326m041v4b	25	2	work	work	NOUN
m326m041v4b	25	3	presented	present	VERB
m326m041v4b	25	4	here	here	ADV
m326m041v4b	25	5	would	would	AUX
m326m041v4b	25	6	help	help	VERB
m326m041v4b	25	7	to	to	PART
m326m041v4b	25	8	design	design	VERB
m326m041v4b	25	9	low	low	ADJ
m326m041v4b	25	10	-	-	PUNCT
m326m041v4b	25	11	voltage	voltage	NOUN
m326m041v4b	25	12	/	/	SYM
m326m041v4b	25	13	low	low	ADJ
m326m041v4b	25	14	-	-	PUNCT
m326m041v4b	25	15	power	power	NOUN
m326m041v4b	25	16	transistor	transistor	NOUN
m326m041v4b	25	17	switches	switch	NOUN
m326m041v4b	25	18	,	,	PUNCT
m326m041v4b	25	19	and	and	CCONJ
m326m041v4b	25	20	also	also	ADV
m326m041v4b	25	21	to	to	PART
m326m041v4b	25	22	design	design	VERB
m326m041v4b	25	23	the	the	DET
m326m041v4b	25	24	energy	energy	NOUN
m326m041v4b	25	25	-	-	PUNCT
m326m041v4b	25	26	efficient	efficient	ADJ
m326m041v4b	25	27	computing	computing	NOUN
m326m041v4b	25	28	circuits	circuit	NOUN
m326m041v4b	25	29	/	/	SYM
m326m041v4b	25	30	systems	system	NOUN
m326m041v4b	25	31	.	.	PUNCT