id	sid	tid	token	lemma	pos
ng451g08h0n	1	1	gan	gan	PROPN
ng451g08h0n	1	2	and	and	CCONJ
ng451g08h0n	1	3	related	related	ADJ
ng451g08h0n	1	4	materials	material	NOUN
ng451g08h0n	1	5	have	have	AUX
ng451g08h0n	1	6	become	become	VERB
ng451g08h0n	1	7	one	one	NUM
ng451g08h0n	1	8	of	of	ADP
ng451g08h0n	1	9	the	the	DET
ng451g08h0n	1	10	most	most	ADV
ng451g08h0n	1	11	promising	promising	ADJ
ng451g08h0n	1	12	material	material	NOUN
ng451g08h0n	1	13	systems	system	NOUN
ng451g08h0n	1	14	for	for	ADP
ng451g08h0n	1	15	high	high	ADJ
ng451g08h0n	1	16	efficiency	efficiency	NOUN
ng451g08h0n	1	17	power	power	NOUN
ng451g08h0n	1	18	electronics	electronic	NOUN
ng451g08h0n	1	19	due	due	ADP
ng451g08h0n	1	20	to	to	ADP
ng451g08h0n	1	21	their	their	PRON
ng451g08h0n	1	22	unique	unique	ADJ
ng451g08h0n	1	23	material	material	NOUN
ng451g08h0n	1	24	properties	property	NOUN
ng451g08h0n	1	25	,	,	PUNCT
ng451g08h0n	1	26	such	such	ADJ
ng451g08h0n	1	27	as	as	ADP
ng451g08h0n	1	28	a	a	DET
ng451g08h0n	1	29	high	high	ADJ
ng451g08h0n	1	30	critical	critical	ADJ
ng451g08h0n	1	31	electrical	electrical	ADJ
ng451g08h0n	1	32	field	field	NOUN
ng451g08h0n	1	33	,	,	PUNCT
ng451g08h0n	1	34	large	large	ADJ
ng451g08h0n	1	35	band	band	NOUN
ng451g08h0n	1	36	gap	gap	NOUN
ng451g08h0n	1	37	,	,	PUNCT
ng451g08h0n	1	38	high	high	ADJ
ng451g08h0n	1	39	electron	electron	NOUN
ng451g08h0n	1	40	saturation	saturation	NOUN
ng451g08h0n	1	41	velocity	velocity	NOUN
ng451g08h0n	1	42	,	,	PUNCT
ng451g08h0n	1	43	large	large	ADJ
ng451g08h0n	1	44	electron	electron	NOUN
ng451g08h0n	1	45	mobility	mobility	NOUN
ng451g08h0n	1	46	,	,	PUNCT
ng451g08h0n	1	47	and	and	CCONJ
ng451g08h0n	1	48	high	high	ADJ
ng451g08h0n	1	49	thermal	thermal	ADJ
ng451g08h0n	1	50	conductivity	conductivity	NOUN
ng451g08h0n	1	51	compared	compare	VERB
ng451g08h0n	1	52	with	with	ADP
ng451g08h0n	1	53	alternatives	alternative	NOUN
ng451g08h0n	1	54	,	,	PUNCT
ng451g08h0n	1	55	such	such	ADJ
ng451g08h0n	1	56	as	as	ADP
ng451g08h0n	1	57	si	si	PROPN
ng451g08h0n	1	58	,	,	PUNCT
ng451g08h0n	1	59	gaas	gaas	NOUN
ng451g08h0n	1	60	and	and	CCONJ
ng451g08h0n	1	61	sic	sic	NOUN
ng451g08h0n	1	62	.	.	PUNCT
ng451g08h0n	2	1	however	however	ADV
ng451g08h0n	2	2	,	,	PUNCT
ng451g08h0n	2	3	the	the	DET
ng451g08h0n	2	4	actual	actual	ADJ
ng451g08h0n	2	5	performance	performance	NOUN
ng451g08h0n	2	6	of	of	ADP
ng451g08h0n	2	7	many	many	ADJ
ng451g08h0n	2	8	lateral	lateral	ADJ
ng451g08h0n	2	9	gan	gan	PROPN
ng451g08h0n	2	10	devices	device	NOUN
ng451g08h0n	2	11	has	have	AUX
ng451g08h0n	2	12	fallen	fall	VERB
ng451g08h0n	2	13	short	short	ADV
ng451g08h0n	2	14	of	of	ADP
ng451g08h0n	2	15	expectations	expectation	NOUN
ng451g08h0n	2	16	,	,	PUNCT
ng451g08h0n	2	17	including	include	VERB
ng451g08h0n	2	18	large	large	ADJ
ng451g08h0n	2	19	ideality	ideality	NOUN
ng451g08h0n	2	20	factors	factor	NOUN
ng451g08h0n	2	21	,	,	PUNCT
ng451g08h0n	2	22	the	the	DET
ng451g08h0n	2	23	inability	inability	NOUN
ng451g08h0n	2	24	to	to	PART
ng451g08h0n	2	25	achieve	achieve	VERB
ng451g08h0n	2	26	avalanche	avalanche	NOUN
ng451g08h0n	2	27	breakdown	breakdown	NOUN
ng451g08h0n	2	28	,	,	PUNCT
ng451g08h0n	2	29	dynamic	dynamic	ADJ
ng451g08h0n	2	30	on	on	ADP
ng451g08h0n	2	31	-	-	PUNCT
ng451g08h0n	2	32	state	state	NOUN
ng451g08h0n	2	33	resistance	resistance	NOUN
ng451g08h0n	2	34	,	,	PUNCT
ng451g08h0n	2	35	current	current	ADJ
ng451g08h0n	2	36	collapse	collapse	NOUN
ng451g08h0n	2	37	,	,	PUNCT
ng451g08h0n	2	38	and	and	CCONJ
ng451g08h0n	2	39	hysteresis	hysteresis	NOUN
ng451g08h0n	2	40	in	in	ADP
ng451g08h0n	2	41	fets	fet	NOUN
ng451g08h0n	2	42	.	.	PUNCT
ng451g08h0n	3	1	unlike	unlike	ADP
ng451g08h0n	3	2	other	other	ADJ
ng451g08h0n	3	3	power	power	NOUN
ng451g08h0n	3	4	device	device	NOUN
ng451g08h0n	3	5	options	option	NOUN
ng451g08h0n	3	6	,	,	PUNCT
ng451g08h0n	3	7	most	most	ADJ
ng451g08h0n	3	8	gan	gan	ADJ
ng451g08h0n	3	9	devices	device	NOUN
ng451g08h0n	3	10	are	be	AUX
ng451g08h0n	3	11	built	build	VERB
ng451g08h0n	3	12	on	on	ADP
ng451g08h0n	3	13	lattice	lattice	NOUN
ng451g08h0n	3	14	-	-	PUNCT
ng451g08h0n	3	15	mismatched	mismatch	VERB
ng451g08h0n	3	16	non	non	ADJ
ng451g08h0n	3	17	-	-	ADJ
ng451g08h0n	3	18	native	native	ADJ
ng451g08h0n	3	19	substrates	substrate	NOUN
ng451g08h0n	3	20	such	such	ADJ
ng451g08h0n	3	21	as	as	ADP
ng451g08h0n	3	22	sapphire	sapphire	NOUN
ng451g08h0n	3	23	or	or	CCONJ
ng451g08h0n	3	24	sic	sic	VERB
ng451g08h0n	3	25	because	because	SCONJ
ng451g08h0n	3	26	of	of	ADP
ng451g08h0n	3	27	the	the	DET
ng451g08h0n	3	28	high	high	ADJ
ng451g08h0n	3	29	cost	cost	NOUN
ng451g08h0n	3	30	and	and	CCONJ
ng451g08h0n	3	31	limited	limited	ADJ
ng451g08h0n	3	32	availability	availability	NOUN
ng451g08h0n	3	33	of	of	ADP
ng451g08h0n	3	34	bulk	bulk	ADJ
ng451g08h0n	3	35	gan	gan	PROPN
ng451g08h0n	3	36	substrates	substrate	NOUN
ng451g08h0n	3	37	.	.	PUNCT
ng451g08h0n	4	1	these	these	DET
ng451g08h0n	4	2	foreign	foreign	ADJ
ng451g08h0n	4	3	substrates	substrate	NOUN
ng451g08h0n	4	4	result	result	VERB
ng451g08h0n	4	5	not	not	PART
ng451g08h0n	4	6	only	only	ADV
ng451g08h0n	4	7	in	in	ADP
ng451g08h0n	4	8	large	large	ADJ
ng451g08h0n	4	9	dislocation	dislocation	NOUN
ng451g08h0n	4	10	densities	density	NOUN
ng451g08h0n	4	11	,	,	PUNCT
ng451g08h0n	4	12	but	but	CCONJ
ng451g08h0n	4	13	also	also	ADV
ng451g08h0n	4	14	limited	limit	VERB
ng451g08h0n	4	15	thermal	thermal	ADJ
ng451g08h0n	4	16	conductance	conductance	NOUN
ng451g08h0n	4	17	for	for	ADP
ng451g08h0n	4	18	heat	heat	NOUN
ng451g08h0n	4	19	removal	removal	NOUN
ng451g08h0n	4	20	.	.	PUNCT
ng451g08h0n	5	1	this	this	DET
ng451g08h0n	5	2	work	work	NOUN
ng451g08h0n	5	3	focuses	focus	VERB
ng451g08h0n	5	4	on	on	ADP
ng451g08h0n	5	5	the	the	DET
ng451g08h0n	5	6	development	development	NOUN
ng451g08h0n	5	7	of	of	ADP
ng451g08h0n	5	8	several	several	ADJ
ng451g08h0n	5	9	gan	gan	PROPN
ng451g08h0n	5	10	power	power	NOUN
ng451g08h0n	5	11	device	device	NOUN
ng451g08h0n	5	12	concepts	concept	NOUN
ng451g08h0n	5	13	,	,	PUNCT
ng451g08h0n	5	14	such	such	ADJ
ng451g08h0n	5	15	as	as	ADP
ng451g08h0n	5	16	schottky	schottky	NOUN
ng451g08h0n	5	17	diodes	diode	NOUN
ng451g08h0n	5	18	and	and	CCONJ
ng451g08h0n	5	19	p	p	X
ng451g08h0n	5	20	-	-	PUNCT
ng451g08h0n	5	21	n	n	NOUN
ng451g08h0n	5	22	diodes	diode	NOUN
ng451g08h0n	5	23	for	for	ADP
ng451g08h0n	5	24	high	high	ADJ
ng451g08h0n	5	25	efficiency	efficiency	NOUN
ng451g08h0n	5	26	power	power	NOUN
ng451g08h0n	5	27	switching	switching	NOUN
ng451g08h0n	5	28	applications	application	NOUN
ng451g08h0n	5	29	,	,	PUNCT
ng451g08h0n	5	30	made	make	VERB
ng451g08h0n	5	31	possible	possible	ADJ
ng451g08h0n	5	32	by	by	ADP
ng451g08h0n	5	33	vertical	vertical	ADJ
ng451g08h0n	5	34	device	device	NOUN
ng451g08h0n	5	35	architectures	architecture	NOUN
ng451g08h0n	5	36	.	.	PUNCT
ng451g08h0n	6	1	the	the	DET
ng451g08h0n	6	2	prospects	prospect	NOUN
ng451g08h0n	6	3	for	for	ADP
ng451g08h0n	6	4	,	,	PUNCT
ng451g08h0n	6	5	and	and	CCONJ
ng451g08h0n	6	6	benefits	benefit	NOUN
ng451g08h0n	6	7	of	of	ADP
ng451g08h0n	6	8	fabrication	fabrication	NOUN
ng451g08h0n	6	9	processing	processing	NOUN
ng451g08h0n	6	10	using	use	VERB
ng451g08h0n	6	11	epitaxial	epitaxial	ADJ
ng451g08h0n	6	12	lift	lift	NOUN
ng451g08h0n	6	13	-	-	PUNCT
ng451g08h0n	6	14	off	off	NOUN
ng451g08h0n	6	15	(	(	PUNCT
ng451g08h0n	6	16	elo	elo	NOUN
ng451g08h0n	6	17	)	)	PUNCT
ng451g08h0n	6	18	using	use	VERB
ng451g08h0n	6	19	band	band	NOUN
ng451g08h0n	6	20	gap	gap	NOUN
ng451g08h0n	6	21	selective	selective	ADJ
ng451g08h0n	6	22	photoelectrochemical	photoelectrochemical	NOUN
ng451g08h0n	6	23	(	(	PUNCT
ng451g08h0n	6	24	pec	pec	NOUN
ng451g08h0n	6	25	)	)	PUNCT
ng451g08h0n	6	26	etching	etch	VERB
ng451g08h0n	6	27	techniques	technique	NOUN
ng451g08h0n	6	28	are	be	AUX
ng451g08h0n	6	29	also	also	ADV
ng451g08h0n	6	30	examined.vertical	examined.vertical	ADJ
ng451g08h0n	6	31	devices	device	NOUN
ng451g08h0n	6	32	are	be	AUX
ng451g08h0n	6	33	advantageous	advantageous	ADJ
ng451g08h0n	6	34	for	for	ADP
ng451g08h0n	6	35	power	power	NOUN
ng451g08h0n	6	36	applications	application	NOUN
ng451g08h0n	6	37	because	because	SCONJ
ng451g08h0n	6	38	they	they	PRON
ng451g08h0n	6	39	can	can	AUX
ng451g08h0n	6	40	utilize	utilize	VERB
ng451g08h0n	6	41	thick	thick	ADJ
ng451g08h0n	6	42	low	low	ADJ
ng451g08h0n	6	43	-	-	PUNCT
ng451g08h0n	6	44	doped	dope	VERB
ng451g08h0n	6	45	drift	drift	NOUN
ng451g08h0n	6	46	layers	layer	NOUN
ng451g08h0n	6	47	to	to	PART
ng451g08h0n	6	48	achieve	achieve	VERB
ng451g08h0n	6	49	higher	high	ADJ
ng451g08h0n	6	50	breakdown	breakdown	NOUN
ng451g08h0n	6	51	voltages	voltage	NOUN
ng451g08h0n	6	52	.	.	PUNCT
ng451g08h0n	7	1	this	this	PRON
ng451g08h0n	7	2	leads	lead	VERB
ng451g08h0n	7	3	to	to	ADP
ng451g08h0n	7	4	smaller	small	ADJ
ng451g08h0n	7	5	die	die	NOUN
ng451g08h0n	7	6	sizes	size	NOUN
ng451g08h0n	7	7	than	than	ADP
ng451g08h0n	7	8	comparable	comparable	ADJ
ng451g08h0n	7	9	lateral	lateral	ADJ
ng451g08h0n	7	10	devices	device	NOUN
ng451g08h0n	7	11	.	.	PUNCT
ng451g08h0n	8	1	on	on	ADP
ng451g08h0n	8	2	the	the	DET
ng451g08h0n	8	3	other	other	ADJ
ng451g08h0n	8	4	hand	hand	NOUN
ng451g08h0n	8	5	,	,	PUNCT
ng451g08h0n	8	6	vertical	vertical	ADJ
ng451g08h0n	8	7	devices	device	NOUN
ng451g08h0n	8	8	are	be	AUX
ng451g08h0n	8	9	more	more	ADV
ng451g08h0n	8	10	sensitive	sensitive	ADJ
ng451g08h0n	8	11	to	to	ADP
ng451g08h0n	8	12	the	the	DET
ng451g08h0n	8	13	presence	presence	NOUN
ng451g08h0n	8	14	of	of	ADP
ng451g08h0n	8	15	threading	threading	NOUN
ng451g08h0n	8	16	dislocations	dislocation	NOUN
ng451g08h0n	8	17	and	and	CCONJ
ng451g08h0n	8	18	thus	thus	ADV
ng451g08h0n	8	19	must	must	AUX
ng451g08h0n	8	20	be	be	AUX
ng451g08h0n	8	21	made	make	VERB
ng451g08h0n	8	22	on	on	ADP
ng451g08h0n	8	23	high	high	ADJ
ng451g08h0n	8	24	quality	quality	NOUN
ng451g08h0n	8	25	bulk	bulk	ADJ
ng451g08h0n	8	26	gan	gan	PROPN
ng451g08h0n	8	27	substrates	substrate	NOUN
ng451g08h0n	8	28	for	for	ADP
ng451g08h0n	8	29	best	good	ADJ
ng451g08h0n	8	30	performance	performance	NOUN
ng451g08h0n	8	31	.	.	PUNCT
ng451g08h0n	9	1	elo	elo	NOUN
ng451g08h0n	9	2	technology	technology	NOUN
ng451g08h0n	9	3	has	have	VERB
ng451g08h0n	9	4	the	the	DET
ng451g08h0n	9	5	potential	potential	NOUN
ng451g08h0n	9	6	to	to	PART
ng451g08h0n	9	7	allow	allow	VERB
ng451g08h0n	9	8	cost	cost	NOUN
ng451g08h0n	9	9	-	-	PUNCT
ng451g08h0n	9	10	effective	effective	ADJ
ng451g08h0n	9	11	device	device	NOUN
ng451g08h0n	9	12	production	production	NOUN
ng451g08h0n	9	13	using	use	VERB
ng451g08h0n	9	14	native	native	ADJ
ng451g08h0n	9	15	gan	gan	PROPN
ng451g08h0n	9	16	substrates	substrates	PROPN
ng451g08h0n	9	17	through	through	ADP
ng451g08h0n	9	18	substrate	substrate	NOUN
ng451g08h0n	9	19	re	re	NOUN
ng451g08h0n	9	20	-	-	NOUN
ng451g08h0n	9	21	use	use	NOUN
ng451g08h0n	9	22	,	,	PUNCT
ng451g08h0n	9	23	as	as	ADV
ng451g08h0n	9	24	well	well	ADV
ng451g08h0n	9	25	as	as	ADP
ng451g08h0n	9	26	to	to	PART
ng451g08h0n	9	27	improve	improve	VERB
ng451g08h0n	9	28	thermal	thermal	ADJ
ng451g08h0n	9	29	performance	performance	NOUN
ng451g08h0n	9	30	of	of	ADP
ng451g08h0n	9	31	devices	device	NOUN
ng451g08h0n	9	32	by	by	ADP
ng451g08h0n	9	33	eliminating	eliminate	VERB
ng451g08h0n	9	34	the	the	DET
ng451g08h0n	9	35	thermal	thermal	ADJ
ng451g08h0n	9	36	resistance	resistance	NOUN
ng451g08h0n	9	37	associated	associate	VERB
ng451g08h0n	9	38	with	with	ADP
ng451g08h0n	9	39	conventional	conventional	ADJ
ng451g08h0n	9	40	substrates	substrate	NOUN
ng451g08h0n	9	41	by	by	ADP
ng451g08h0n	9	42	enabling	enable	VERB
ng451g08h0n	9	43	direct	direct	ADJ
ng451g08h0n	9	44	thermal	thermal	ADJ
ng451g08h0n	9	45	and	and	CCONJ
ng451g08h0n	9	46	electrical	electrical	ADJ
ng451g08h0n	9	47	bonding	bonding	NOUN
ng451g08h0n	9	48	.	.	PUNCT
ng451g08h0n	10	1	to	to	PART
ng451g08h0n	10	2	investigate	investigate	VERB
ng451g08h0n	10	3	vertical	vertical	ADJ
ng451g08h0n	10	4	gan	gan	PROPN
ng451g08h0n	10	5	devices	device	NOUN
ng451g08h0n	10	6	and	and	CCONJ
ng451g08h0n	10	7	the	the	DET
ng451g08h0n	10	8	potential	potential	ADJ
ng451g08h0n	10	9	benefits	benefit	NOUN
ng451g08h0n	10	10	of	of	ADP
ng451g08h0n	10	11	elo	elo	NOUN
ng451g08h0n	10	12	processing	processing	NOUN
ng451g08h0n	10	13	,	,	PUNCT
ng451g08h0n	10	14	schottky	schottky	NOUN
ng451g08h0n	10	15	diodes	diode	NOUN
ng451g08h0n	10	16	and	and	CCONJ
ng451g08h0n	10	17	p	p	X
ng451g08h0n	10	18	-	-	PUNCT
ng451g08h0n	10	19	n	n	CCONJ
ng451g08h0n	10	20	junction	junction	NOUN
ng451g08h0n	10	21	diodes	diode	NOUN
ng451g08h0n	10	22	have	have	AUX
ng451g08h0n	10	23	been	be	AUX
ng451g08h0n	10	24	fabricated	fabricate	VERB
ng451g08h0n	10	25	and	and	CCONJ
ng451g08h0n	10	26	tested	test	VERB
ng451g08h0n	10	27	.	.	PUNCT
ng451g08h0n	11	1	the	the	DET
ng451g08h0n	11	2	schottky	schottky	PROPN
ng451g08h0n	11	3	device	device	NOUN
ng451g08h0n	11	4	results	result	NOUN
ng451g08h0n	11	5	suggests	suggest	VERB
ng451g08h0n	11	6	that	that	SCONJ
ng451g08h0n	11	7	elo	elo	NOUN
ng451g08h0n	11	8	processing	processing	NOUN
ng451g08h0n	11	9	could	could	AUX
ng451g08h0n	11	10	potentially	potentially	ADV
ng451g08h0n	11	11	improve	improve	VERB
ng451g08h0n	11	12	device	device	NOUN
ng451g08h0n	11	13	performance	performance	NOUN
ng451g08h0n	11	14	for	for	ADP
ng451g08h0n	11	15	devices	device	NOUN
ng451g08h0n	11	16	on	on	ADP
ng451g08h0n	11	17	non	non	ADJ
ng451g08h0n	11	18	-	-	ADJ
ng451g08h0n	11	19	native	native	ADJ
ng451g08h0n	11	20	substrates	substrate	NOUN
ng451g08h0n	11	21	.	.	PUNCT
ng451g08h0n	12	1	in	in	ADP
ng451g08h0n	12	2	addition	addition	NOUN
ng451g08h0n	12	3	,	,	PUNCT
ng451g08h0n	12	4	to	to	PART
ng451g08h0n	12	5	realize	realize	VERB
ng451g08h0n	12	6	high	high	ADJ
ng451g08h0n	12	7	-	-	PUNCT
ng451g08h0n	12	8	voltage	voltage	NOUN
ng451g08h0n	12	9	,	,	PUNCT
ng451g08h0n	12	10	high	high	ADJ
ng451g08h0n	12	11	-	-	PUNCT
ng451g08h0n	12	12	current	current	ADJ
ng451g08h0n	12	13	vertical	vertical	ADJ
ng451g08h0n	12	14	gan	gan	PROPN
ng451g08h0n	12	15	-	-	PUNCT
ng451g08h0n	12	16	on	on	ADP
ng451g08h0n	12	17	-	-	PUNCT
ng451g08h0n	12	18	gan	gan	PROPN
ng451g08h0n	12	19	power	power	NOUN
ng451g08h0n	12	20	diodes	diode	NOUN
ng451g08h0n	12	21	and	and	CCONJ
ng451g08h0n	12	22	surmount	surmount	VERB
ng451g08h0n	12	23	the	the	DET
ng451g08h0n	12	24	limitations	limitation	NOUN
ng451g08h0n	12	25	of	of	ADP
ng451g08h0n	12	26	mesa	mesa	NOUN
ng451g08h0n	12	27	-	-	PUNCT
ng451g08h0n	12	28	isolated	isolate	VERB
ng451g08h0n	12	29	power	power	NOUN
ng451g08h0n	12	30	diodes	diode	NOUN
ng451g08h0n	12	31	,	,	PUNCT
ng451g08h0n	12	32	we	we	PRON
ng451g08h0n	12	33	developed	develop	VERB
ng451g08h0n	12	34	a	a	DET
ng451g08h0n	12	35	new	new	ADJ
ng451g08h0n	12	36	vertical	vertical	ADJ
ng451g08h0n	12	37	p	p	PROPN
ng451g08h0n	12	38	-	-	PUNCT
ng451g08h0n	12	39	n	n	NOUN
ng451g08h0n	12	40	diode	diode	NOUN
ng451g08h0n	12	41	design	design	NOUN
ng451g08h0n	12	42	with	with	ADP
ng451g08h0n	12	43	ion	ion	NOUN
ng451g08h0n	12	44	-	-	PUNCT
ng451g08h0n	12	45	implantation	implantation	NOUN
ng451g08h0n	12	46	edge	edge	NOUN
ng451g08h0n	12	47	termination	termination	NOUN
ng451g08h0n	12	48	(	(	PUNCT
ng451g08h0n	12	49	et	et	X
ng451g08h0n	12	50	)	)	PUNCT
ng451g08h0n	12	51	,	,	PUNCT
ng451g08h0n	12	52	sputtered	sputter	VERB
ng451g08h0n	12	53	sinx	sinx	NOUN
ng451g08h0n	12	54	passivation	passivation	NOUN
ng451g08h0n	12	55	and	and	CCONJ
ng451g08h0n	12	56	back	back	ADJ
ng451g08h0n	12	57	-	-	PUNCT
ng451g08h0n	12	58	side	side	NOUN
ng451g08h0n	12	59	cathode	cathode	NOUN
ng451g08h0n	12	60	contacts	contact	NOUN
ng451g08h0n	12	61	.	.	PUNCT
ng451g08h0n	13	1	the	the	DET
ng451g08h0n	13	2	measured	measured	ADJ
ng451g08h0n	13	3	devices	device	NOUN
ng451g08h0n	13	4	exhibit	exhibit	VERB
ng451g08h0n	13	5	a	a	DET
ng451g08h0n	13	6	breakdown	breakdown	NOUN
ng451g08h0n	13	7	voltage	voltage	NOUN
ng451g08h0n	13	8	exceeding	exceed	VERB
ng451g08h0n	13	9	1.68	1.68	NUM
ng451g08h0n	13	10	kv	kv	NOUN
ng451g08h0n	13	11	,	,	PUNCT
ng451g08h0n	13	12	with	with	SCONJ
ng451g08h0n	13	13	differential	differential	ADJ
ng451g08h0n	13	14	specific	specific	ADJ
ng451g08h0n	13	15	on	on	ADP
ng451g08h0n	13	16	resistances	resistance	NOUN
ng451g08h0n	13	17	of	of	ADP
ng451g08h0n	13	18	0.15	0.15	NUM
ng451g08h0n	13	19	momega	momega	PROPN
ng451g08h0n	13	20	-	-	PUNCT
ng451g08h0n	13	21	cm2	cm2	PROPN
ng451g08h0n	13	22	.	.	NOUN
ng451g08h0n	13	23	a	a	DET
ng451g08h0n	13	24	baliga	baliga	NOUN
ng451g08h0n	13	25	's	's	PART
ng451g08h0n	13	26	figure	figure	NOUN
ng451g08h0n	13	27	-	-	PUNCT
ng451g08h0n	13	28	of	of	ADP
ng451g08h0n	13	29	-	-	PUNCT
ng451g08h0n	13	30	merit	merit	NOUN
ng451g08h0n	13	31	(	(	PUNCT
ng451g08h0n	13	32	bfom	bfom	NOUN
ng451g08h0n	13	33	)	)	PUNCT
ng451g08h0n	13	34	of	of	ADP
ng451g08h0n	13	35	18.8	18.8	NUM
ng451g08h0n	13	36	gw	gw	PROPN
ng451g08h0n	13	37	/	/	SYM
ng451g08h0n	13	38	cm2	cm2	PROPN
ng451g08h0n	13	39	is	be	AUX
ng451g08h0n	13	40	obtained	obtain	VERB
ng451g08h0n	13	41	;	;	PUNCT
ng451g08h0n	13	42	this	this	PRON
ng451g08h0n	13	43	is	be	AUX
ng451g08h0n	13	44	among	among	ADP
ng451g08h0n	13	45	the	the	DET
ng451g08h0n	13	46	highest	high	ADJ
ng451g08h0n	13	47	reported	report	VERB
ng451g08h0n	13	48	bfoms	bfom	NOUN
ng451g08h0n	13	49	for	for	ADP
ng451g08h0n	13	50	gan	gan	PROPN
ng451g08h0n	13	51	homoepitaxial	homoepitaxial	ADJ
ng451g08h0n	13	52	p	p	PROPN
ng451g08h0n	13	53	-	-	PUNCT
ng451g08h0n	13	54	n	n	NOUN
ng451g08h0n	13	55	diodes	diode	NOUN
ng451g08h0n	13	56	.	.	PUNCT
ng451g08h0n	14	1	these	these	DET
ng451g08h0n	14	2	devices	device	NOUN
ng451g08h0n	14	3	also	also	ADV
ng451g08h0n	14	4	exhibit	exhibit	VERB
ng451g08h0n	14	5	near	near	ADP
ng451g08h0n	14	6	-	-	PUNCT
ng451g08h0n	14	7	ideal	ideal	ADJ
ng451g08h0n	14	8	scaling	scaling	NOUN
ng451g08h0n	14	9	with	with	ADP
ng451g08h0n	14	10	area	area	NOUN
ng451g08h0n	14	11	,	,	PUNCT
ng451g08h0n	14	12	enabling	enable	VERB
ng451g08h0n	14	13	currents	current	NOUN
ng451g08h0n	14	14	as	as	ADV
ng451g08h0n	14	15	high	high	ADJ
ng451g08h0n	14	16	as	as	ADP
ng451g08h0n	14	17	12	12	NUM
ng451g08h0n	14	18	a	a	NOUN
ng451g08h0n	14	19	for	for	ADP
ng451g08h0n	14	20	a	a	DET
ng451g08h0n	14	21	1	1	NUM
ng451g08h0n	14	22	mm	mm	NOUN
ng451g08h0n	14	23	diameter	diameter	NOUN
ng451g08h0n	14	24	device	device	NOUN
ng451g08h0n	14	25	.	.	PUNCT
ng451g08h0n	15	1	to	to	PART
ng451g08h0n	15	2	investigate	investigate	VERB
ng451g08h0n	15	3	the	the	DET
ng451g08h0n	15	4	effect	effect	NOUN
ng451g08h0n	15	5	of	of	ADP
ng451g08h0n	15	6	elo	elo	NOUN
ng451g08h0n	15	7	processing	process	VERB
ng451g08h0n	15	8	on	on	ADP
ng451g08h0n	15	9	devices	device	NOUN
ng451g08h0n	15	10	on	on	ADP
ng451g08h0n	15	11	bulk	bulk	ADJ
ng451g08h0n	15	12	gan	gan	PROPN
ng451g08h0n	15	13	substrates	substrates	PROPN
ng451g08h0n	15	14	,	,	PUNCT
ng451g08h0n	15	15	a	a	DET
ng451g08h0n	15	16	comparison	comparison	NOUN
ng451g08h0n	15	17	study	study	NOUN
ng451g08h0n	15	18	was	be	AUX
ng451g08h0n	15	19	performed	perform	VERB
ng451g08h0n	15	20	on	on	ADP
ng451g08h0n	15	21	the	the	DET
ng451g08h0n	15	22	devices	device	NOUN
ng451g08h0n	15	23	after	after	ADP
ng451g08h0n	15	24	lift	lift	NOUN
ng451g08h0n	15	25	-	-	PUNCT
ng451g08h0n	15	26	off	off	ADP
ng451g08h0n	15	27	processing	processing	NOUN
ng451g08h0n	15	28	(	(	PUNCT
ng451g08h0n	15	29	after	after	ADP
ng451g08h0n	15	30	transfer	transfer	NOUN
ng451g08h0n	15	31	to	to	ADP
ng451g08h0n	15	32	a	a	DET
ng451g08h0n	15	33	cu	cu	NOUN
ng451g08h0n	15	34	carrier	carrier	NOUN
ng451g08h0n	15	35	wafer	wafer	NOUN
ng451g08h0n	15	36	)	)	PUNCT
ng451g08h0n	15	37	and	and	CCONJ
ng451g08h0n	15	38	nominally	nominally	ADV
ng451g08h0n	15	39	-	-	PUNCT
ng451g08h0n	15	40	identical	identical	ADJ
ng451g08h0n	15	41	control	control	NOUN
ng451g08h0n	15	42	devices	device	NOUN
ng451g08h0n	15	43	(	(	PUNCT
ng451g08h0n	15	44	on	on	ADP
ng451g08h0n	15	45	a	a	DET
ng451g08h0n	15	46	bulk	bulk	ADJ
ng451g08h0n	15	47	gan	gan	ADJ
ng451g08h0n	15	48	substrate	substrate	NOUN
ng451g08h0n	15	49	and	and	CCONJ
ng451g08h0n	15	50	without	without	ADP
ng451g08h0n	15	51	the	the	DET
ng451g08h0n	15	52	buried	bury	VERB
ng451g08h0n	15	53	release	release	NOUN
ng451g08h0n	15	54	layer	layer	NOUN
ng451g08h0n	15	55	)	)	PUNCT
ng451g08h0n	15	56	.	.	PUNCT
ng451g08h0n	16	1	the	the	DET
ng451g08h0n	16	2	results	result	NOUN
ng451g08h0n	16	3	show	show	VERB
ng451g08h0n	16	4	that	that	SCONJ
ng451g08h0n	16	5	elo	elo	NOUN
ng451g08h0n	16	6	-	-	PUNCT
ng451g08h0n	16	7	processed	process	VERB
ng451g08h0n	16	8	devices	device	NOUN
ng451g08h0n	16	9	have	have	VERB
ng451g08h0n	16	10	nearly	nearly	ADV
ng451g08h0n	16	11	identical	identical	ADJ
ng451g08h0n	16	12	electrical	electrical	ADJ
ng451g08h0n	16	13	performance	performance	NOUN
ng451g08h0n	16	14	---	---	PUNCT
ng451g08h0n	16	15	and	and	CCONJ
ng451g08h0n	16	16	improved	improve	VERB
ng451g08h0n	16	17	thermal	thermal	ADJ
ng451g08h0n	16	18	performance	performance	NOUN
ng451g08h0n	16	19	---	---	PUNCT
ng451g08h0n	16	20	compared	compare	VERB
ng451g08h0n	16	21	to	to	ADP
ng451g08h0n	16	22	devices	device	NOUN
ng451g08h0n	16	23	on	on	ADP
ng451g08h0n	16	24	full	full	ADJ
ng451g08h0n	16	25	-	-	PUNCT
ng451g08h0n	16	26	thickness	thickness	NOUN
ng451g08h0n	16	27	gan	gan	PROPN
ng451g08h0n	16	28	substrates	substrate	NOUN
ng451g08h0n	16	29	.	.	PUNCT
ng451g08h0n	17	1	in	in	ADP
ng451g08h0n	17	2	addition	addition	NOUN
ng451g08h0n	17	3	to	to	ADP
ng451g08h0n	17	4	these	these	DET
ng451g08h0n	17	5	high	high	ADJ
ng451g08h0n	17	6	power	power	NOUN
ng451g08h0n	17	7	diodes	diode	NOUN
ng451g08h0n	17	8	,	,	PUNCT
ng451g08h0n	17	9	vertical	vertical	ADJ
ng451g08h0n	17	10	gan	gan	PROPN
ng451g08h0n	17	11	mesfets	mesfet	NOUN
ng451g08h0n	17	12	have	have	AUX
ng451g08h0n	17	13	been	be	AUX
ng451g08h0n	17	14	designed	design	VERB
ng451g08h0n	17	15	and	and	CCONJ
ng451g08h0n	17	16	simulated	simulate	VERB
ng451g08h0n	17	17	,	,	PUNCT
ng451g08h0n	17	18	and	and	CCONJ
ng451g08h0n	17	19	functional	functional	ADJ
ng451g08h0n	17	20	devices	device	NOUN
ng451g08h0n	17	21	have	have	AUX
ng451g08h0n	17	22	been	be	AUX
ng451g08h0n	17	23	obtained	obtain	VERB
ng451g08h0n	17	24	.	.	PUNCT