id	sid	tid	token	lemma	pos
w0892805c44	1	1	in	in	ADP
w0892805c44	1	2	the	the	DET
w0892805c44	1	3	past	past	ADJ
w0892805c44	1	4	decades	decade	NOUN
w0892805c44	1	5	,	,	PUNCT
w0892805c44	1	6	the	the	DET
w0892805c44	1	7	demand	demand	NOUN
w0892805c44	1	8	for	for	ADP
w0892805c44	1	9	high	high	ADJ
w0892805c44	1	10	-	-	PUNCT
w0892805c44	1	11	performance	performance	NOUN
w0892805c44	1	12	computing	computing	NOUN
w0892805c44	1	13	systems	system	NOUN
w0892805c44	1	14	has	have	AUX
w0892805c44	1	15	arisen	arise	VERB
w0892805c44	1	16	quickly	quickly	ADV
w0892805c44	1	17	due	due	ADP
w0892805c44	1	18	to	to	ADP
w0892805c44	1	19	the	the	DET
w0892805c44	1	20	exponentially	exponentially	ADV
w0892805c44	1	21	growing	grow	VERB
w0892805c44	1	22	amount	amount	NOUN
w0892805c44	1	23	of	of	ADP
w0892805c44	1	24	data	datum	NOUN
w0892805c44	1	25	that	that	PRON
w0892805c44	1	26	needs	need	VERB
w0892805c44	1	27	to	to	PART
w0892805c44	1	28	be	be	AUX
w0892805c44	1	29	processed	process	VERB
w0892805c44	1	30	daily	daily	ADV
w0892805c44	1	31	.	.	PUNCT
w0892805c44	2	1	however	however	ADV
w0892805c44	2	2	,	,	PUNCT
w0892805c44	2	3	the	the	DET
w0892805c44	2	4	performance	performance	NOUN
w0892805c44	2	5	improvement	improvement	NOUN
w0892805c44	2	6	of	of	ADP
w0892805c44	2	7	computing	compute	VERB
w0892805c44	2	8	systems	system	NOUN
w0892805c44	2	9	is	be	AUX
w0892805c44	2	10	now	now	ADV
w0892805c44	2	11	facing	face	VERB
w0892805c44	2	12	two	two	NUM
w0892805c44	2	13	main	main	ADJ
w0892805c44	2	14	challenges	challenge	NOUN
w0892805c44	2	15	:	:	PUNCT
w0892805c44	2	16	1	1	X
w0892805c44	2	17	)	)	PUNCT
w0892805c44	2	18	moore	moore	NOUN
w0892805c44	2	19	's	's	PART
w0892805c44	2	20	law	law	NOUN
w0892805c44	2	21	has	have	AUX
w0892805c44	2	22	slowed	slow	VERB
w0892805c44	2	23	down	down	ADP
w0892805c44	2	24	as	as	SCONJ
w0892805c44	2	25	the	the	DET
w0892805c44	2	26	tech	tech	PROPN
w0892805c44	2	27	node	node	NOUN
w0892805c44	2	28	enters	enter	VERB
w0892805c44	2	29	the	the	DET
w0892805c44	2	30	single	single	ADJ
w0892805c44	2	31	-	-	PUNCT
w0892805c44	2	32	digit	digit	NOUN
w0892805c44	2	33	era	era	NOUN
w0892805c44	2	34	,	,	PUNCT
w0892805c44	2	35	and	and	CCONJ
w0892805c44	2	36	2	2	X
w0892805c44	2	37	)	)	PUNCT
w0892805c44	2	38	the	the	DET
w0892805c44	2	39	gap	gap	NOUN
w0892805c44	2	40	between	between	ADP
w0892805c44	2	41	the	the	DET
w0892805c44	2	42	performance	performance	NOUN
w0892805c44	2	43	of	of	ADP
w0892805c44	2	44	processor	processor	NOUN
w0892805c44	2	45	and	and	CCONJ
w0892805c44	2	46	memory	memory	NOUN
w0892805c44	2	47	is	be	AUX
w0892805c44	2	48	growing	grow	VERB
w0892805c44	2	49	by	by	ADP
w0892805c44	2	50	30	30	NUM
w0892805c44	2	51	%	%	NOUN
w0892805c44	2	52	every	every	DET
w0892805c44	2	53	year	year	NOUN
w0892805c44	2	54	,	,	PUNCT
w0892805c44	2	55	which	which	PRON
w0892805c44	2	56	leads	lead	VERB
w0892805c44	2	57	to	to	ADP
w0892805c44	2	58	"	"	PUNCT
w0892805c44	2	59	the	the	DET
w0892805c44	2	60	memory	memory	NOUN
w0892805c44	2	61	wall	wall	NOUN
w0892805c44	2	62	"	"	PUNCT
w0892805c44	2	63	problem.monolithic	problem.monolithic	ADJ
w0892805c44	2	64	3d	3d	NOUN
w0892805c44	2	65	integration	integration	NOUN
w0892805c44	2	66	is	be	AUX
w0892805c44	2	67	a	a	DET
w0892805c44	2	68	promising	promising	ADJ
w0892805c44	2	69	approach	approach	NOUN
w0892805c44	2	70	to	to	ADP
w0892805c44	2	71	overcoming	overcome	VERB
w0892805c44	2	72	these	these	DET
w0892805c44	2	73	two	two	NUM
w0892805c44	2	74	challenges	challenge	NOUN
w0892805c44	2	75	.	.	PUNCT
w0892805c44	3	1	in	in	ADP
w0892805c44	3	2	the	the	DET
w0892805c44	3	3	monolithic	monolithic	ADJ
w0892805c44	3	4	3d	3d	NOUN
w0892805c44	3	5	integrated	integrate	VERB
w0892805c44	3	6	circuits	circuit	NOUN
w0892805c44	3	7	(	(	PUNCT
w0892805c44	3	8	m3d	m3d	PROPN
w0892805c44	3	9	-	-	PUNCT
w0892805c44	3	10	ics	ics	PROPN
w0892805c44	3	11	)	)	PUNCT
w0892805c44	3	12	,	,	PUNCT
w0892805c44	3	13	each	each	DET
w0892805c44	3	14	layer	layer	NOUN
w0892805c44	3	15	of	of	ADP
w0892805c44	3	16	devices	device	NOUN
w0892805c44	3	17	is	be	AUX
w0892805c44	3	18	directly	directly	ADV
w0892805c44	3	19	built	build	VERB
w0892805c44	3	20	on	on	ADP
w0892805c44	3	21	top	top	NOUN
w0892805c44	3	22	of	of	ADP
w0892805c44	3	23	the	the	DET
w0892805c44	3	24	previous	previous	ADJ
w0892805c44	3	25	layers	layer	NOUN
w0892805c44	3	26	,	,	PUNCT
w0892805c44	3	27	and	and	CCONJ
w0892805c44	3	28	different	different	ADJ
w0892805c44	3	29	layers	layer	NOUN
w0892805c44	3	30	are	be	AUX
w0892805c44	3	31	connected	connect	VERB
w0892805c44	3	32	through	through	ADP
w0892805c44	3	33	the	the	DET
w0892805c44	3	34	monolithic	monolithic	ADJ
w0892805c44	3	35	-	-	PUNCT
w0892805c44	3	36	interlayer	interlayer	NOUN
w0892805c44	3	37	-	-	PUNCT
w0892805c44	3	38	vias	via	NOUN
w0892805c44	3	39	(	(	PUNCT
w0892805c44	3	40	mivs	mivs	NOUN
w0892805c44	3	41	)	)	PUNCT
w0892805c44	3	42	.	.	PUNCT
w0892805c44	4	1	this	this	DET
w0892805c44	4	2	approach	approach	NOUN
w0892805c44	4	3	can	can	AUX
w0892805c44	4	4	provide	provide	VERB
w0892805c44	4	5	higher	high	ADJ
w0892805c44	4	6	transistor	transistor	NOUN
w0892805c44	4	7	density	density	NOUN
w0892805c44	4	8	without	without	ADP
w0892805c44	4	9	scaling	scale	VERB
w0892805c44	4	10	the	the	DET
w0892805c44	4	11	transistor	transistor	NOUN
w0892805c44	4	12	size	size	NOUN
w0892805c44	4	13	and	and	CCONJ
w0892805c44	4	14	higher	high	ADJ
w0892805c44	4	15	bandwidth	bandwidth	ADJ
w0892805c44	4	16	due	due	ADP
w0892805c44	4	17	to	to	ADP
w0892805c44	4	18	its	its	PRON
w0892805c44	4	19	high	high	ADJ
w0892805c44	4	20	-	-	PUNCT
w0892805c44	4	21	density	density	NOUN
w0892805c44	4	22	mivs.this	mivs.this	NOUN
w0892805c44	4	23	approach	approach	NOUN
w0892805c44	4	24	's	's	PART
w0892805c44	4	25	main	main	ADJ
w0892805c44	4	26	challenge	challenge	NOUN
w0892805c44	4	27	is	be	AUX
w0892805c44	4	28	forming	form	VERB
w0892805c44	4	29	a	a	DET
w0892805c44	4	30	high	high	ADJ
w0892805c44	4	31	-	-	PUNCT
w0892805c44	4	32	quality	quality	NOUN
w0892805c44	4	33	active	active	ADJ
w0892805c44	4	34	layer	layer	NOUN
w0892805c44	4	35	on	on	ADP
w0892805c44	4	36	top	top	NOUN
w0892805c44	4	37	of	of	ADP
w0892805c44	4	38	the	the	DET
w0892805c44	4	39	isolation	isolation	NOUN
w0892805c44	4	40	layer	layer	NOUN
w0892805c44	4	41	within	within	ADP
w0892805c44	4	42	the	the	DET
w0892805c44	4	43	beol	beol	ADV
w0892805c44	4	44	-	-	PUNCT
w0892805c44	4	45	compatible	compatible	ADJ
w0892805c44	4	46	thermal	thermal	ADJ
w0892805c44	4	47	budget	budget	NOUN
w0892805c44	4	48	(	(	PUNCT
w0892805c44	4	49	&	&	CCONJ
w0892805c44	4	50	lt	lt	PROPN
w0892805c44	4	51	;	;	PUNCT
w0892805c44	4	52	400	400	NUM
w0892805c44	4	53	°	°	NOUN
w0892805c44	4	54	c	c	X
w0892805c44	4	55	)	)	PUNCT
w0892805c44	4	56	.	.	PUNCT
w0892805c44	5	1	the	the	DET
w0892805c44	5	2	performance	performance	NOUN
w0892805c44	5	3	of	of	ADP
w0892805c44	5	4	most	most	ADV
w0892805c44	5	5	traditional	traditional	ADJ
w0892805c44	5	6	semiconductor	semiconductor	NOUN
w0892805c44	5	7	materials	material	NOUN
w0892805c44	5	8	formed	form	VERB
w0892805c44	5	9	within	within	ADP
w0892805c44	5	10	this	this	DET
w0892805c44	5	11	thermal	thermal	ADJ
w0892805c44	5	12	budget	budget	NOUN
w0892805c44	5	13	is	be	AUX
w0892805c44	5	14	highly	highly	ADV
w0892805c44	5	15	degraded	degrade	VERB
w0892805c44	5	16	due	due	ADP
w0892805c44	5	17	to	to	ADP
w0892805c44	5	18	their	their	PRON
w0892805c44	5	19	low	low	ADJ
w0892805c44	5	20	crystallinity	crystallinity	NOUN
w0892805c44	5	21	.	.	PUNCT
w0892805c44	6	1	unlike	unlike	ADP
w0892805c44	6	2	conventional	conventional	ADJ
w0892805c44	6	3	materials	material	NOUN
w0892805c44	6	4	,	,	PUNCT
w0892805c44	6	5	amorphous	amorphous	ADJ
w0892805c44	6	6	oxide	oxide	NOUN
w0892805c44	6	7	semiconductor	semiconductor	NOUN
w0892805c44	6	8	(	(	PUNCT
w0892805c44	6	9	aos	aos	PROPN
w0892805c44	6	10	)	)	PUNCT
w0892805c44	6	11	is	be	AUX
w0892805c44	6	12	a	a	DET
w0892805c44	6	13	class	class	NOUN
w0892805c44	6	14	of	of	ADP
w0892805c44	6	15	semiconductor	semiconductor	NOUN
w0892805c44	6	16	materials	material	NOUN
w0892805c44	6	17	that	that	PRON
w0892805c44	6	18	can	can	AUX
w0892805c44	6	19	maintain	maintain	VERB
w0892805c44	6	20	high	high	ADJ
w0892805c44	6	21	mobility	mobility	NOUN
w0892805c44	6	22	at	at	ADP
w0892805c44	6	23	the	the	DET
w0892805c44	6	24	amorphous	amorphous	ADJ
w0892805c44	6	25	state	state	NOUN
w0892805c44	6	26	because	because	SCONJ
w0892805c44	6	27	of	of	ADP
w0892805c44	6	28	their	their	PRON
w0892805c44	6	29	special	special	ADJ
w0892805c44	6	30	band	band	NOUN
w0892805c44	6	31	structure	structure	NOUN
w0892805c44	6	32	.	.	PUNCT
w0892805c44	7	1	this	this	DET
w0892805c44	7	2	unique	unique	ADJ
w0892805c44	7	3	property	property	NOUN
w0892805c44	7	4	makes	make	VERB
w0892805c44	7	5	it	it	PRON
w0892805c44	7	6	a	a	DET
w0892805c44	7	7	strong	strong	ADJ
w0892805c44	7	8	candidate	candidate	NOUN
w0892805c44	7	9	as	as	ADP
w0892805c44	7	10	the	the	DET
w0892805c44	7	11	active	active	ADJ
w0892805c44	7	12	layer	layer	NOUN
w0892805c44	7	13	material	material	NOUN
w0892805c44	7	14	in	in	ADP
w0892805c44	7	15	m3d-ics.this	m3d-ics.this	DET
w0892805c44	7	16	dissertation	dissertation	NOUN
w0892805c44	7	17	mainly	mainly	ADV
w0892805c44	7	18	evaluated	evaluate	VERB
w0892805c44	7	19	the	the	DET
w0892805c44	7	20	capability	capability	NOUN
w0892805c44	7	21	of	of	ADP
w0892805c44	7	22	indium	indium	NOUN
w0892805c44	7	23	tungsten	tungsten	NOUN
w0892805c44	7	24	oxide	oxide	NOUN
w0892805c44	7	25	(	(	PUNCT
w0892805c44	7	26	iwo	iwo	PROPN
w0892805c44	7	27	)	)	PUNCT
w0892805c44	7	28	,	,	PUNCT
w0892805c44	7	29	a	a	DET
w0892805c44	7	30	high	high	ADJ
w0892805c44	7	31	-	-	PUNCT
w0892805c44	7	32	mobility	mobility	NOUN
w0892805c44	7	33	aos	aos	PROPN
w0892805c44	7	34	material	material	NOUN
w0892805c44	7	35	,	,	PUNCT
w0892805c44	7	36	to	to	PART
w0892805c44	7	37	be	be	AUX
w0892805c44	7	38	used	use	VERB
w0892805c44	7	39	as	as	ADP
w0892805c44	7	40	the	the	DET
w0892805c44	7	41	channel	channel	NOUN
w0892805c44	7	42	material	material	NOUN
w0892805c44	7	43	for	for	ADP
w0892805c44	7	44	high	high	ADJ
w0892805c44	7	45	-	-	PUNCT
w0892805c44	7	46	performance	performance	NOUN
w0892805c44	7	47	beol	beol	ADJ
w0892805c44	7	48	-	-	PUNCT
w0892805c44	7	49	compatible	compatible	ADJ
w0892805c44	7	50	transistors	transistor	NOUN
w0892805c44	7	51	.	.	PUNCT
w0892805c44	8	1	it	it	PRON
w0892805c44	8	2	explored	explore	VERB
w0892805c44	8	3	its	its	PRON
w0892805c44	8	4	potential	potential	ADJ
w0892805c44	8	5	applications	application	NOUN
w0892805c44	8	6	in	in	ADP
w0892805c44	8	7	monolithic	monolithic	ADJ
w0892805c44	8	8	3d	3d	NOUN
w0892805c44	8	9	integrated	integrate	VERB
w0892805c44	8	10	memory	memory	NOUN
w0892805c44	8	11	.	.	PUNCT
w0892805c44	9	1	to	to	PART
w0892805c44	9	2	begin	begin	VERB
w0892805c44	9	3	with	with	ADP
w0892805c44	9	4	,	,	PUNCT
w0892805c44	9	5	a	a	DET
w0892805c44	9	6	beol	beol	ADV
w0892805c44	9	7	-	-	PUNCT
w0892805c44	9	8	compatible	compatible	ADJ
w0892805c44	9	9	back	back	ADJ
w0892805c44	9	10	-	-	PUNCT
w0892805c44	9	11	gate	gate	NOUN
w0892805c44	9	12	and	and	CCONJ
w0892805c44	9	13	dual	dual	ADJ
w0892805c44	9	14	-	-	PUNCT
w0892805c44	9	15	gate	gate	NOUN
w0892805c44	9	16	process	process	NOUN
w0892805c44	9	17	of	of	ADP
w0892805c44	9	18	iwo	iwo	PROPN
w0892805c44	9	19	transistor	transistor	NOUN
w0892805c44	9	20	with	with	ADP
w0892805c44	9	21	the	the	DET
w0892805c44	9	22	high	high	ADJ
w0892805c44	9	23	-	-	PUNCT
w0892805c44	9	24	k	k	PROPN
w0892805c44	9	25	gate	gate	PROPN
w0892805c44	9	26	dielectric	dielectric	PROPN
w0892805c44	9	27	was	be	AUX
w0892805c44	9	28	developed	develop	VERB
w0892805c44	9	29	.	.	PUNCT
w0892805c44	10	1	it	it	PRON
w0892805c44	10	2	demonstrated	demonstrate	VERB
w0892805c44	10	3	an	an	DET
w0892805c44	10	4	ultra	ultra	ADJ
w0892805c44	10	5	-	-	ADJ
w0892805c44	10	6	scaled	scale	VERB
w0892805c44	10	7	dual	dual	ADJ
w0892805c44	10	8	-	-	PUNCT
w0892805c44	10	9	gate	gate	NOUN
w0892805c44	10	10	iwo	iwo	PROPN
w0892805c44	10	11	transistor	transistor	NOUN
w0892805c44	10	12	with	with	ADP
w0892805c44	10	13	well	well	ADV
w0892805c44	10	14	-	-	PUNCT
w0892805c44	10	15	targeted	target	VERB
w0892805c44	10	16	vth	vth	NOUN
w0892805c44	10	17	,	,	PUNCT
w0892805c44	10	18	excellent	excellent	ADJ
w0892805c44	10	19	electrostatic	electrostatic	ADJ
w0892805c44	10	20	control	control	NOUN
w0892805c44	10	21	,	,	PUNCT
w0892805c44	10	22	and	and	CCONJ
w0892805c44	10	23	the	the	DET
w0892805c44	10	24	highest	high	ADJ
w0892805c44	10	25	drive	drive	NOUN
w0892805c44	10	26	current	current	NOUN
w0892805c44	10	27	among	among	ADP
w0892805c44	10	28	all	all	DET
w0892805c44	10	29	other	other	ADJ
w0892805c44	10	30	enhancement	enhancement	ADJ
w0892805c44	10	31	-	-	PUNCT
w0892805c44	10	32	mode	mode	NOUN
w0892805c44	10	33	aos	aos	PROPN
w0892805c44	10	34	transistors	transistor	NOUN
w0892805c44	10	35	.	.	PUNCT
w0892805c44	11	1	in	in	ADP
w0892805c44	11	2	addition	addition	NOUN
w0892805c44	11	3	,	,	PUNCT
w0892805c44	11	4	an	an	DET
w0892805c44	11	5	iwo	iwo	PROPN
w0892805c44	11	6	-	-	PUNCT
w0892805c44	11	7	transistor	transistor	NOUN
w0892805c44	11	8	-	-	PUNCT
w0892805c44	11	9	based	base	VERB
w0892805c44	11	10	2t	2t	PROPN
w0892805c44	11	11	-	-	PUNCT
w0892805c44	11	12	capacitorless	capacitorless	ADJ
w0892805c44	11	13	dram	dram	NOUN
w0892805c44	11	14	with	with	ADP
w0892805c44	11	15	a	a	DET
w0892805c44	11	16	long	long	ADJ
w0892805c44	11	17	retention	retention	NOUN
w0892805c44	11	18	time	time	NOUN
w0892805c44	11	19	is	be	AUX
w0892805c44	11	20	proposed	propose	VERB
w0892805c44	11	21	and	and	CCONJ
w0892805c44	11	22	experimentally	experimentally	ADV
w0892805c44	11	23	demonstrated	demonstrate	VERB
w0892805c44	11	24	for	for	ADP
w0892805c44	11	25	the	the	DET
w0892805c44	11	26	first	first	ADJ
w0892805c44	11	27	time	time	NOUN
w0892805c44	11	28	.	.	PUNCT
w0892805c44	12	1	moreover	moreover	ADV
w0892805c44	12	2	,	,	PUNCT
w0892805c44	12	3	an	an	DET
w0892805c44	12	4	il	il	PROPN
w0892805c44	12	5	-	-	ADJ
w0892805c44	12	6	free	free	ADJ
w0892805c44	12	7	iwo	iwo	PROPN
w0892805c44	12	8	ferroelectric	ferroelectric	ADJ
w0892805c44	12	9	transistor	transistor	NOUN
w0892805c44	12	10	,	,	PUNCT
w0892805c44	12	11	based	base	VERB
w0892805c44	12	12	on	on	ADP
w0892805c44	12	13	our	our	PRON
w0892805c44	12	14	first	first	ADJ
w0892805c44	12	15	proposed	propose	VERB
w0892805c44	12	16	w	w	ADJ
w0892805c44	12	17	-	-	PUNCT
w0892805c44	12	18	sacrificial	sacrificial	ADJ
w0892805c44	12	19	-	-	PUNCT
w0892805c44	12	20	layer	layer	NOUN
w0892805c44	12	21	process	process	NOUN
w0892805c44	12	22	,	,	PUNCT
w0892805c44	12	23	was	be	AUX
w0892805c44	12	24	also	also	ADV
w0892805c44	12	25	demonstrated	demonstrate	VERB
w0892805c44	12	26	,	,	PUNCT
w0892805c44	12	27	which	which	PRON
w0892805c44	12	28	showed	show	VERB
w0892805c44	12	29	the	the	DET
w0892805c44	12	30	highest	high	ADJ
w0892805c44	12	31	memory	memory	NOUN
w0892805c44	12	32	window	window	NOUN
w0892805c44	12	33	,	,	PUNCT
w0892805c44	12	34	endurance	endurance	NOUN
w0892805c44	12	35	,	,	PUNCT
w0892805c44	12	36	and	and	CCONJ
w0892805c44	12	37	read	read	VERB
w0892805c44	12	38	/	/	SYM
w0892805c44	12	39	write	write	NOUN
w0892805c44	12	40	speed	speed	NOUN
w0892805c44	12	41	,	,	PUNCT
w0892805c44	12	42	as	as	SCONJ
w0892805c44	12	43	compared	compare	VERB
w0892805c44	12	44	to	to	ADP
w0892805c44	12	45	other	other	ADJ
w0892805c44	12	46	aos	aos	PROPN
w0892805c44	12	47	ferroelectric	ferroelectric	ADJ
w0892805c44	12	48	transistors	transistor	NOUN
w0892805c44	12	49	.	.	PUNCT