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news-003577		Developing more energy-efficient transistors through quantum tunneling | News | Notre Dame News | University of Notre Dame			.html	text/html	852	26	39	University of Notre Dame Skip To Content Skip To Navigation Skip To Search University of Notre Dame Notre Dame News Experts ND in the News Subscribe About Us Home Contact Search Menu Home › News › Developing more energy-efficient transistors through quantum tunneling Developing more energy-efficient transistors through quantum tunneling Published: March 27, 2012 Author: Arnold Phifer Researchers at the University of Notre Dame and Pennsylvania State University have announced breakthroughs in the development of tunneling field-effect transistors (TFETs), a semiconductor technology that takes advantage of the quirky behavior of electrons at the quantum level. Contacts: Alan Seabaugh, 574-631-4473, Alan.C.Seabaugh.1@nd.edu; Suman Datta, 814-865-0519, sdatta@engr.psu.edu Posted In: Research Home Experts ND in the News Subscribe About Us Related October 05, 2022 Astrophysicists find evidence for the presence of the first stars October 04, 2022 NIH awards $4 million grant to psychologists researching suicide prevention September 29, 2022 Notre Dame, Ukrainian Catholic University launch three new research grants September 27, 2022 Notre Dame, Trinity College Dublin engineers join to advance novel treatment for cystic fibrosis September 22, 2022 Climate-prepared countries are losing ground, latest ND-GAIN index shows For the Media Contact Office of Public Affairs and Communications Notre Dame News 500 Grace Hall Notre Dame, IN 46556 USA Facebook Twitter Instagram YouTube Pinterest © 2022 University of Notre Dame Search Mobile App News Events Visit Accessibility Facebook Twitter Instagram YouTube LinkedIn	cache/news-003577.html	txt/news-003577.txt