key: cord-0075997-4uo8teci authors: Anusuya, P; Kumar, Prashanth; Esakki, Papanasam; Agarwal, Lucky title: Recent Study on Schottky Tunnel Field Effect Transistor for Biosensing Applications date: 2022-03-24 journal: Silicon DOI: 10.1007/s12633-022-01828-y sha: f36392fe842556b7659f3ed73fb5508d400c64ec doc_id: 75997 cord_uid: 4uo8teci In this review, we discussed highly sensitive biosensor devices which is having a more attractive, wide scope and development in the sensing field. Biosensor devices can detect the charged and neutral charged biomolecules such as protein, nucleic acids, antibody agents and viruses. Due to these highly sensitive biosensor devices, we mainly focused on schottky tunnel field-effect transistors (STFET), these transistors have unique properties such as enhanced transconductance and gate controllability, low leakage current etc. In addition, we studied the performances and challenges of STFET by dielectric modulation doping concentration, dielectric modulation, and heterostructure devices. Further, we have reviewed the comparison of STFET and conventional devices. This article reviews mainly on the study of high sensitivity analysis of STFET and modified Schottky-TFET structures for the use of biosensing applications. In recent times biosensor-based devices are promising and shows rapid growth in biosensing applications. A biosensor is a typical device due to which the biomolecule interactions are converted into an electrical signal by a transducer. It can detect the bacteria, viruses of the human body and chemical bonds in the biomolecules. Field Effect Transistors are usually incorporated in biosensor devices, which have mainly been used because of their unique properties such as label-free detection, high sensitivity, flexibility, simple, inexpensive, fast, specificity in detection and effectiveness [1] [2] [3] [4] [5] . Furthermore, it has some limits where it is unable to detect the charged biomolecules and slow response time. The FET biosensor requires a rapid, robust, low thermal budget, high doping concentration to achieve high sensitivity. To improve the qualities of sensors researcher's focus on the metal oxide semiconductor field-effect transistor in biosensor devices. Usually, MOSFET has high sensitivity, miniaturisation, and quick response time for detection of both charged and neutral charge biomolecules even though it has some issues [6] [7] [8] [9] [10] [11] . When scaling down the device it is affected by Short Channel Effects (SCE), power consumption, restrained subthreshold swing, high leakage current [12, 13] . To mitigate these issues researchers proposed schottky tunnel field-effect transistors. Due to their high drive current, high sensitivity, low ambipolar conduction, and low leakage current we demonstrate reliable, specific, rapid STFET biosensors for the detection of biomolecules [14, 15] . It relies on both thermionic emission and the Band-To-Band tunnelling mechanism due to these mechanisms enhanced the performance in terms of high I on /I off ratio. Furthermore, STFET enhances the cut-off frequency and decrease intrinsic delay which increases the speed of the device, [16] [17] [18] [19] [20] [21] . Moreover, the major behaviour of biosensing devices is to sense the sensitivity by variation of dielectric constant and charge density methods are considered in STFET [14] . This review mainly reports a comprehensive analysis and performance of STFET devices for biosensing applications. We also discuss novel structures, performances, characteristics compared with conventional devices. Biosensors are sensing tools which are consists of bioreceptor, transducer, and signal processing unit [22] . Biosensors can be divided into two categories. Physical biosensors (the physical property of medium got the information from the sensing device e.g., sense of hearing, touch and sight) and chemical biosensors (chemical property of medium got the information from the sensing device e.g., sense of smell and taste). Furthermore, the physical biosensors can be classified into optical biosensors or mechanical biosensors as well as chemical biosensors can be classified into electrochemical or biochemical biosensors. In optical biosensor devices, biomolecules interact with light and sensing by an optical transducer system. An optical transducer system can be utilized as surface plasma on resonance (SPR), localized surface plasma on resonance, evanescent wave fluorescence and optical waveguide interferometry. Due to their enhanced performance, they can use for biosensing applications [23] [24] [25] . For mechanical biosensor devices, owing to their biomolecule's interaction the surface of the cantilever shifted towards up or down and sense the bioreceptors. Owing to the excellent merits like high sensitivity, quick response time it can be used in biosensing applications. In the electrochemical biosensors, electrode surface structure determined the signal transfer and performance of the device with bio element interactions. The qualitative performance provides high sensitivity, more specific biosensor devices. Figure 1 shows biochemical biosensors convert the biochemical reaction changes into physical signals through the transducer. It provides more specific, reproducible, rapid biosensor devices [27] [28] [29] [30] . The different kinds of devices have unique properties to analyze the biomolecules. Scaling the device is affected by SCEs and other circumstances. To overcome these issues, the device takes a variety of steps taken in fabrication in Oxidation, deposition, etching, patterning, annealing, and ion implantation techniques used in the fabrication of a device. In 2021, A. Ramos et al. used chemical vapour deposition to create a pseudo-MOSFET of ZnO sheets. Due to highquality thin films that are extremely pleasant, simple to use, and inexpensive. The CVD process enhanced the device's potential and produced high-quality samples. It was discovered that the band was bending unfavourably. During the CVD procedure, certain flaws occur in the SiO 2 /Si substrates. The reaction raises the V GS voltage, resulting in poor crystallinity and a worse ZnO layer transition [31] . Figure 2 shows the chemical vapour deposition process for zinc oxide. The length and width of the channel for ZnO is 1000 μm and 100 μm Au deposited on the silicon substrate. Andreas Hierlemann, fabricated the sputtering method of the MOSFET device for biosensor applications. The Al deposition (sputtering) can detect the breast cancer antigens using polymeric layers or FPW based immunoassay in the gas state. Next, the etching process provide the membrane structure to the device and again deposited the zinc oxide. Here the IDT process leads to evaporate or depositing the Al or Au. Finally coating the polymers by spray, then biomolecules deposited on the device [32] . Shadab Rabbani et al. proposed a Fig. 1 Schematic diagram of biosensing process [26] Silicon cantilever embedded MOSFET. Using sol-gel process the PZT layer is deposited on the wafer. PZT converts electrical into mechanical energy. The mechanical vibrations lead to the generation of charges and the potential to change the drain current, which is capable to recognize the bio-receptors of the MOSFET device. The parallel array operation and suppressed cantilever length improve the sensitivity of the device [33] . The JL-MOSFET device fabricated by Ajay et al. with recess etching process the nanocavity is formed from source and drain regions. When the SiO 2 layer deposit in the device the biomolecules are influenced by the potential in the channel of the nanocavity region. Which can detect the DNA, enzymes, cells etc. Different structures explained by Namrata Mendiratta et al. based on the MOSFET device [34] . Yu pan et al. in 2019 developed novel monolayer MoS 2 film on a silicon substrate of Fin-FET device using CVD method at low temperature. The low temperature is not affected by STI or Fin structure. MoS 2 FIN-FET device consists of 10 nm length of the back gate, length of the channel is 3 μm, the width of the channel is 45 μm, SiO 2 thickness is 120 nm, and height of the Si fin is 113 nm. This device decreases the leakage current, SiO 2 of the interface layer decrease the lattice mismatching effect in between high-K and Si materials. This device provides high potential, proper switching properties with drain current and excellent electrical properties [35] . Qingzhu Zhang et al. developed a Fin-FET device in 2018. The Si nanowire is used for this device. Because of their properties such as large surface-to-volume ratio and high compatibility with the sputtering technique the spacer is formed. The electrodes length extracted about 2 mm will reduce the leakage current when sensing mesenchymal stem cells. Figure 3 shows one of the physical vapour deposition and in the solid-state, the atoms are oxidized with ions. This leads to control of the film growth. The excellent features it can be used for ultra-sensitive cell-based devices and therapy techniques [37] . Hung-Cheng Lin et al. expressed micro/nanowire Fin-FET device using sol-gel technique in 2015. This technique using for dielectric in capacitors and it provides dielectric properties. A mixture of particles settled on the surface of the layer by Fig. 4 . The surface to volume ratio must be large, which can enhance the sensitivity of the device particularly nanowire-based Fin-FET devices. IGZO is prepared for better electrical properties such as low SS, improved threshold voltage and high electron mobility of DUV laser with the decreasing temperature of the annealing process like 600°C, 450°C to 300°C the mobility increases. The mobility ratios are 2, 7 and 56 respectively without the DUV device. Due to the Fig. 2 Schematic process of CVD method [31] homogeneous distribution the mobility of electrons increases. Owing to the device properties can be used in biomedical sensor applications [39] . Tsung-Yang Liow et al. demonstrated n-channel Fin-FET device in the year 2009. Which is using the recess etching technique to well device performances in the channel region. It controls the thickness of the oxide, suppresses the parasitic, SDE resistance and negligible the potential problems hence the I DSAT and strain are improved, which can use in biomedical applications [40] . Chen Chong et al. designed the DMTFET device in the year 2021. The CVD technique (N + doping) to achieve excellent performances, with DMTFET device we can detect charge density for positively and negatively charged biomolecules. The charge density range of about 10 10 cm −2 to 10 13 cm −2 has high sensitivity than the other FET devices. I on /I off ratio and SS also improved for this device with good features we can use for biosensing applications [41] . Yan Wu et al. in the year 2017 developed an Mg/Si TFET used RF magnetron sputtering technique. Multi-stacks of Mg/ Si films are formed by a sputtering method, which leads to an annealing process and an n-Si interface layer formed on the substrate provides excellent electrical properties of the device [42] . Deepika Singh et al. in the year 2016 exposed Dielectric Modulated Junction-less TFET using charge plasma technique to detect the biomolecules. The Fabrication method is the simple and lesser thermal budget required, due to this steeper SS and I on /I off ratio are investigated to sense the biomolecules. Hence the sensitivity performance is high than the MOSFET devices [43] . Anran Gao et al. exposed robust silicon nanowire Tunnel-FET biosensor. Figure 5 represented the first layer of the semiconductor material over the second material layer and when annealing the compound at a specific temperature, the metal contact is evaporating. The wet etching technique used for the TFET device with SiNW can provide high controllability. Further, it generates the smooth and maximum quality due to the minimum size, well cross-section, and maximum surface fictionalization. Depending on the variation of analyte binding, n and p channel devices operated. SiNW TFET is capable to provide high sensitivity when compared to SiNW FET device leads to sensing applications of POC diagnostics [45] . Sebastian Preg et al. developed the SB-NW-FET device in the year 2013. With the CVD technique, electrical properties are improved. SB-NW-FET having tunneling mechanism for carrier transport, using the thermal oxidation hysteresis was removed and gate potential controlled the ambipolar conduction. Moreover, the output characteristics show high on-current about 1.6 mA. The parallel arrays show hysteresis and unipolar p-type behavior, which leads to achieving better performance for biosensing applications. [46] . Qianqian Huang et al. in the year 2011 demonstrated self-depleted T-gate STFET using sputtering technique. Improved the thermal stability of NiSi by Ni sputtering. Using this method the SS behavior is decreased and improved the drive current, better saturation behavior and decreases the parasitic resistance [47] . Louis Hutin et al. in the year 2016 developed SBTFET using the Ge enrichment technique. SiGe thin film is formed is about 11 nm and metal/high-k dielectric materials are deposited and patterned. The drain and source regions are grown using ion implantation and anneal spike on the gate. Using the Silicon SBTFET device decreases leakage currents and ambipolar conduction [48] . Sangeeta Sing et al. in the year 2016 fabricated Selfaligned charge plasma STFET using lithography and ion implantation technique. Hence the device provides steeper SS, reduced SCEs and ambipolar conduction because of these features is used as bio and opto compatible applications [49] . Usually, schottky contact is obtained in between the CNT and metal electrodes. Owing to schottky contact transfer the charges between the electrodes of the device. Schottky contact-based materials are palladium, gold, platinum, titanium and molybdenum used for the CNT BioFET device. Karnaushenko et al provided CNT based BioFET with schottky contact in the year 2015. The thermal annealing process offers to suppress the barrier width, charge transmission is improved due to the schottky contact shown in Table 1 . [50] 4 Performance of the STFET Device Parameters are important for the performance of the device. The parameters determine qualitative and quantitative electrical characteristics (surface potential, electric field, permittivity, sensitivity) and modified structures (length, width, gate materials) of the device. In the CP-SB-TEFT device, varying the work function, as a result, suppress the SCEs, leakage current, SS and the Fig. 6 shows when varying the gate-source voltage, the drain current obtained for different drain, source, a double, doped pocket of CP-SB-TFET and variation of different drain-source voltages as a result maximum drain current observed at 1.2 V. The change in work function increases and decrease the tunneling probability is obtained and variation of gate-source voltage for a different work function, provides maximum drain current observed for a work function of 3.9 eV by Fig. 7 . The variation of pocket thickness leads to enhanced the SS, DIBL, V TH and I ON to the CP-SB-TFET device. The oxide thickness decreases, on-state current increases. In channel length variation not more affects the device performance, but when silicon thickness decreases, gate controllability and on-current increases [51] . Double pocket doped ferroelectric SB tunnel FET device exhibits the enhanced drive current, transconductance, gate controllability, I on /I off ratio, and suppress the ambipolar conduction, subthreshold swing because of the tunneling width is reduces in the Ioff state, low FE layer thickness, zero fields relative permittivity, negative capacitance, doping at both regions (source and drain) and interface region of the channel. So, it improved the device performance by Sangeeta Singh et al. and Shilpi Guin et al. [16, 52] . SB-TFET does not occur in-between the p-source and channel region when compared to Doping-Less TFET [53] . SB- Silicon TFET occur between the metal source and channel region [54] , which leads to suppressing the random dopant fluctuations. This results in good electrical properties of the DM-SBTFET device, which can be used as biosensor applications. Further, different gate metal workfunction is considered to improve the gate controllability of the device show in Table 2 . Instead of P-N junction the JL techniques, high electrical properties based on the devices. Jaya Madhan et al. proposed junctionless TFET with schottky contacts, have polarity gate in the p + source region and source electrode near the source for n-type JTFET device. In the transfer characteristics, due to the ohmic contacts between the SE and PG the drain current increases without using the universal schottky tunneling model for Pd 2 Si. However, using with UST model it maintained the same drain current. The depleted hole plasma (HP) occurred between the SE and PG interfaces which decreases the current conduction. Further, the schottky tunneling improved the current conduction. Moreover, using the schottky ohmic contact the subthreshold swing is decreased by 5.95% (59 mV/dec). Depending on the various SE type which has been controlled the threshold voltage variations [43, [55] [56] [57] [58] [59] [60] . The transfer characteristics for DG-JL-TFET with schottky contact device is improved the drain current owing to the thin oxide is about t ox = 1 nm and the maximum current I on (21 μA/μm) and maximum I off (3.15 × 10 −13 A/μm) are observed. Further, if we increase the t ox , I on /I off ratio will decrease. The gate dielectric materials provide the high controllability for CG (control gate) of the high dielectric constant of HfO 2 , enhances the I on /I off ratio and gate controllability, drive current and suppress the subthreshold swing leakage current due to the reduced tunneling barrier. Which leads to an increase in the tunneling probability to flow more electrons [61] . Heterostructure based FET devices offer high electron mobility, high I on /I off ratio,(1361-6463%) high speed, high frequency [62] . Gaurav Pande et al. published an SBTFET device incorporated with Hexagonal Boron Nitride-Encapsulated Monolayer WSe 2 . The 2D thermionic emission analysis Pt-WSe 2 contacts FLP effects are measured. The thin h-BN that occurred in between the Pt and WSe 2 layer exhibits better interface resistances (in between tunnel and channel) leading to optoelectronic and spintronics applications [63] . MoS 2 /MoTe 2 Heterostructure tunnel FET using schottky contacts has been designed using a direct bandgap. The occurred between valance band maximum and conduction band maximum simulated by density functional theory (DFT) offer better drive current. The BTBT transition exhibits negative differential transconductance in the gate overlapping position. Hence the characteristics degrade the TFET performance of the device [64] . Pocket doping enhances the device performance to reduce the SCEs and ambipolar current. Shilpi Guin et al present about pocket doping of the SBTFET device. In the forward biasing, if the doping concentration N p of pocket doping is minimum, the drive current will maximum current. In the reversed bias current decreases because of high resistivity to flow of electrons, to vary the length of the pocket doping L P like 0, 1, 2, 3, 4 nm. For L P = 2 nm offers the high current conduction of the device in the forward bias. Moreover, the reverse bias provides low current conduction due to the thick tunneling width when compared to other devices [65] . GAA Schottky Junction TFET with heavily doped device exhibits high on-current, saturation current presented absolutely and decreases the leakage current. Pocket doping aid to decrease the tunneling width and increasing electrons in the tunnel junctions due to the high electric fields [15] . Based on the STFET characteristics the devices used in different fields such as green transistors, digital and analog, biosensor devices. Electrostatically doped ferroelectric Schottky barrier tunnel field-effect transistor device produced by Sangeeta et al, which gives the negative perovskite ferroelectric capacitance behavior. This paves the way to improve the gate controllability, high-speed switching mechanism, limited ambipolar conduction, enhanced drive current, subthreshold, the transconductance of STFET characteristics [66] . Sebastian Glassner et al. proposed the reconfigurable nanowire with NiSi 2 Schottky contact and tunneling mechanism of the device exhibits the subthreshold swing below 60 mV/dec, high electrostatic controllability interface or contact regions and low ambipolar behavior with reference of three modes. Sebastian Glassner developed 3 modes A, B, C of dual gate nanowire devices. Mode A is an off-state P-type which is biased in the forward direction and a negative voltage is applied in the direction of drain to source. Mode A depicted the high on-off currents. Mode B is N-type behavior which shows high on-off ratio currents when compared to Model A. Model B is also N-type behavior but the direction only change that is a drain to the source. Mode-B gives the average on-off current ratio when compared to the other two Modes A, B. Depending on these three modes ambipolar behavior was observed. These low power, miniaturization and enhanced performance of STFET devices used in green transistor applications [67] [68] [69] [70] [71] . Double pocket charge plasma Schottky barrier TFET device preventing from doping concentration problems, degradation of mobility, RDFs issues. Due to the high performance of the CP-STFET device which is used in the RF and analog circuit applications suggested by Sangeeta et al. [52, 72] . DM-SB-TFET device explored by N.K. Hema Latha et al. exhibit high on-off current ratio with different dielectric constant and dielectric density of variations. Figure 8 represents a change of drain-source voltage, as a result, sensitivity was observed for different dielectric constants and also for different resistivity of dielectric constant K = 4. When the charge density increases the Schottky barrier become thin. This paves the way to enhance the tunneling probability and the more electrons travel from the source to channel. Moreover, sensitivity also increases. The excellent properties which pave the way to sense the charged and neutral charge biomolecules [20] .DM-SE-STFET device senses both neutral and charged biomolecules. For charge density k = 10 higher electric field exists, the SB reduces and it will provide a higher drive current for the device. CP is also improved by this mechanism [77] [78] [79] . The variation of two parameters threshold voltage and I ON / I OFF ratio determine the sensitivity of the biomolecules in the cavity region of the device. For neutral biomolecules, derivation becomes, [69] . For charged biomolecules, the equation represented by N.K. Hema Latha et al. presented dielectric modulated Schottky Barrier Tunnel Field Effect Transistor as label biosensor applications. To sense the biomolecules used suitable gate dielectric with nanogap cavity it's about source end. The tunneling rate, surface potential, electric field brought to found the sensitivity of the device for different nanogap cavity length and thickness with a variation of dielectric constant and charge density. The transfer characteristics of cavity thickness such as 2 nm, 4 nm, 6 nm and 8 nm, increase in cavity length like 5 nm, 10 nm, 15 nm, 20 nm the small variation of drive current observed. For cavity thickness 4 nm and different lengths show the decreased drive current. This leads to the tunneling probability decreased. Using dielectric constant, charge density, various lengths of the cavity and thickness of the cavity found the effect of drive current. Hence characteristics are used to measure the sensitivity of the device [20] . Physically doped, charge plasma and electrically doped tunnel FET device using schottky contact. Arbita Biswas et al .compared the three different tunnel FET devices and the sensitivity is observed. For positively charged biomolecules of charge density K = 5, all the three n-TFET devices exhibit high drive current but p-TFET devices show the minimum current for the same charge density increases the tunneling probability due to the opposite charges of biomolecules because of bands are bending more at tunneling junctions. Due to maximum sensitivity for positively charged biomolecules of n-TFET devices but minimum sensitivity for p-TFET devices. Instead of using negatively charged biomolecules, as a result, low drive current was obtained for three n-TFET devices but p-TFET based devices increased in the reverse biasing. Hence, high sensitivity for negatively charged biomolecules of p-TFET but low sensitivity observed for n-TFET devices. From these three devices, the ED-DM-TFET device shows the high sensitivity [80] [81] [82] [83] [84] . Charge plasma Schottky contact TFET device published by Naveen Kumar et al. Gate All Around architecture assisted with doping less nanowire TFET device [85] [86] [87] [88] [89] [90] . When varying the drain current with gate voltage the threshold voltage and subthreshold slope. The tunneling probability increases when the band is steepened because the conduction band is lowered at the source end of the band. Maximum transconductance was observed and a high band-to-band tunneling rate shows maximum sensitivity is observed. Transfer characteristics of the device exhibit better performance for sensitivity analysis. Therefore the planer device offers scalability, reliability, linearity to the sensing applications. Hence the dielectric constant of different biomolecules are listed in Table 3 . Semiconductor based devices are widely used in the biosensing field. The variation of dielectric constant and charge density by the change of threshold voltage leads to sense the biomolecules, viruses, etc. This review extracted the various fabrication methods with different FET devices and their performances. When compared with other FET biosensors, STFET biosensors are more sensitive depending on the electric field, surface potential, sensitivity, SS, threshold voltages parameters. The doping, pocket doping, junction-less, dielectric modulated and hetero-junction modified architectures provide excellent performances to the conventional STFET device. We also have discussed the various applications related to the conventional STFET device. Which is capable to detect small biomolecules easily when compared to other biosensor devices. 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