LIBRARY OF THE UNIVERSITY OF ILLINOIS AT URBANA-CHAMPAIGN 510.S4 no.Z72>-28 I , the corresponding base charge increases by an amount G^ , the "excess saturation charge. " It is this excess base charge that must be removed before the transistor can come out of saturation. The storage time t is simply the time necessary to remove the excess saturation charge. It is shown in the next section that the storage time can be predicted with the knowledge of a saturation charge analysis parameter, the dc current gain of the transistor, and the currents supplied to the transistor. The analysis follows that originally developed by Beaufoy and Sparkes. REFERENCES 1 R. Beaufoy, J. J. Sparkes, "The Junction Transistor as a Charge- Controlled Device," ATE Journal, 13:^:3:310-327, October, 1957- 7 \LLA Qbx Qbs DISTANCE Fig. 3 MINORITY CARRIER DENSITY IN THE BASE REGION B 3- THE CHARGE ANALYSIS PREDICTION EQUATION 1 " 7 Consider the excess minority carrier charge Q^ in the base region of a transistor. The charge Q,^ is not the total charge in the base; the total charge in the neutral base region is always zero. Rather, 0^ refers only to the excess of minority charge over the corresponding charge in the steady- state with no current flowing. This charge can be changed by recombination or by the flow of a current into or out of the base region. Let i- R (' t ) be the current flowing into the base region at any time t. Then conservation of charge (i.e., the continuity equation) requires that V*) = dr + ? (D B where t is the mean lifetime of minority carriers in the base. In the steady-state, with a constant base current i c (t) = I , we have G^, = t I . B B \B B B This relationship applies only up to the edge of saturation where the base charge is £L and is maintained by a base current I . When the transis- is in saturation, the base charge consists of the charge QL^ plus some excess saturation charge Qn Y » An additional component of base current I is required to maintain the excess charge Q^y* This current depends not only on the amount of charge stored but also on the manner in which this charge is distributed. However, we assume a linear relationship; that is, we assume that there is a one-to-one correspondence between the excess saturation charge and the constant current necessary to maintain it. Effectively, we assume the linear charge distribution in the base region that is depicted in Figure 3 (curve S). Hence, this linear charge analysis model applies only if the excess charge in the base changes slowly enough so that the changes can be regarded as a succession of 9 steady states and the shape of the charge distribution curve remains relatively unchanged. Accordingly, we write that Qu = T qI-D Y ^ where x (the saturation charge analysis parameter) is nominally a constant depending only on the geometry of the transistor. In practice, for the sample tested, it was found that this parameter varied considerably with circuit bias conditions. This will be discussed later. So long as the transistor remains in saturation, the voltages across the junctions remain relatively constant, and it is normally assumed that there are no changes in the charges stored in the junction capacitances. In order to take account of any such changes we must write . m d %^ yt) d V ( t ) do^t) V* 5 - — + t: + — + — (2 > B where Q> and represent the charges on the collector and emitter junction capacitances respectively. (These charges are measured with respect to the equilibrium condition and become zero when the junction applied voltage is zero. ) Unfortunately, these junction capacitances are nonlinear functions of the voltages impressed across them. It has been shown that for an ordinary p-n junction the capacitance varies inversely with voltage as C = k/v ' where n is usually between two and three. However, for the transistor tested it was found that this relation does not hold except for very small junction applied voltages (less than one volt or so), possibly because of the narrowness of the base region and the close proximity of the two junctions. It was also found that for most test conditions the changes in junction capacitance charges is only a small fraction of the excess saturation charge and hence the error made in neglecting or approximating these effects is 10 relatively small. A discussion of the measurement of the junction capacity and voltage change is found in Appendix I. An exact analysis of the dynamic behavior of the transistor, taking into account the nonlinear nature of the charge storage in the junction space-charge layers, is very complicated; we shall not pursue it here. The easiest way to take the effect of the change of these charges into account is to replace the saturation charge analysis parameter x by a o "total" parameter T c which, approximately at least, takes this effect o into account. The actual measurement of the parameter, as the ratio of charge removed to current, gives T c rather than x . Let us return, then, to the derivation of the preduction equation, replacing x by T . Recall that, when the transistor is saturated, Q^ = <^> + C^. The transistor is initially kept in saturation with a base drive 1^, > 1-^, and at t = this current is abruptly lowered to a BA. no value I < I as shown previously in Figure 2. During the storage dQ BS (t) time, then, i £ (t) = 1^, -^- = 0, and I„, = dQ BX (t) + «BS + (3) But G> r, = t^T . so Ss T B I BS^ "V*) ♦ V*' = l_.il. (U) "dt" tT o Integrating, we obtain directly -t/T V*) = k e S + T S (I B2 - W (5) where k is the constant of integration. Next we apply the condition that at t = 0, 11 W°> ■ T s ha.™ ' t s (i bi " V to obtain k = T rr (l_, - I^r,)- Hence, o B± Bid -t/i V*> " T S (I B1 " **>> 6 ' S + T S (I B2 " V (6) The storage time t is the time when ^ = 0. We have then •ts/T c U = T S U B1 ~ ^ e Hence, ° " T S (I B1 - V e + V^ " V (7 > (I R1 " Z R2^ t = T in ( T B1 J 32 ) (8) It is convenient to rewrite Equation (8) as follows, t = T in ( B1 J 32 ) (9) S S (^S/Pj, " J B2) since I- = f3 I at the edge of saturation. This is the desired Co r Bo result: a storage time prediction formula involving two easily measured transistor parameters which accounts (at least approximately) for changes in the charges stored in the junction capacitances. Since, for the purposes of this paper, the base pull-out current will always have a negative value (current will actually be removed from the base), it is convenient to reverse its reference direction. When we reference the collector and base drive currents into the transistor and the base pull-out current out of the transistor, we arrive at the alternative expression, ( I + I ) . t = T In ( B1 J 32 ) (10) S S fys/^ + ^2) 12 REFERENCES 1 T. R. Bashkow, "Effect of Nonlinear Collector Capacitance on Collector Current Rise Time, " IRE Transactions on Electron Devices , ED-S: 1 *: 167-172, October, 1956. 2 R. Beaufoy, J. J. Sparkes, "The Junction Transistor as a Charge- Controlled Device, " ATE Journal, 13:^: 310-327, October, 1957. 3 J. W. Easley, "The Effect of Collector Capacity on the Transient Response of Junction Transistors, " IRE Transactions on Electron Devices , ED-h:l:6-lh, January, 1957 « k P. E. Gray, D. DeWitt, A. R. Boothroyd, J. F. Gibbons, Physical Electronics and Circuit Models of Transistors , pp. 230-235* 5 J. Millman, H. T. Taub, Pulse , Digital , and Switching Waveforms , pp. 788-789. 6 C. L. Searle, A. R. Boothroyd, E. J. Angelo, Jr., P. E. Gray, D. 0. Pederson, Elementary Circuit Properties of Transistors , pp. 280-28U, 288-292. 7 J. J. Sparkes, "A Study of the Charge Control Parameters of Transistors," IRE Proceedings, 1+8:1696-1705, October, i960. 13 k. MEASUREMENT CIRCUITRY CONSIDERATIONS Measurement of the Saturation Charge Analysis Parameter The "total" saturation charge analysis parameter T can be measured as the ratio of charge removed (both excess saturation charge and charge removed from junction capacitances) to excess base drive current by using the circuit of Figure h. This is the technique originally suggested by 1 2 3 Beaufoy and Sparkes, and discussed by Searle, Millman and Taub, and others. Initially, the transistor is in the steady saturation state, defined by the values of the supply voltages. A negative pulse is applied via the R-C network to the base of the transistor. The rise time of the pulse must be much less than the parameter being measured. A Tektronix 109 Pulse Generator with a rise time of less than 0.25 nanosecond was used. Simultaneously, then, a step of base current Av/R and a step of base charge CAV are removed from the base. The magnitude of the pulse must be much greater than the base voltage to insure that the proper charge and current are removed. A value of AV = -12 volts was used. The resistor R is adjusted so that the transistor just reaches the edge of saturation (V-,^ = 0). The differential voltage was observed on a Tektronix 567 Oscilloscope. With this setting of the resistance, ^ - I R " I BS * By proper adjustment of the capacitor, it is possible to arrange that CAV = Q,-dy( + % r - + Qw) so "that the excess saturation charge is removed; if there are any changes in the junction-capacitance stored charges, these charges are also removed. Hence, the transistor makes a step 11+ II u CVJ CNJ CVJ fO o CVJ o CVJ If) If) S1INH JO d38lMnN 20 pull-out current is determined by the magnitude of the applied pulse. The circuit of Figure 8 differs from the circuit of Ebers and Moll in that the latter requires a pulse generator capable of producing a pulse which is initially offset from zero so that both the base drive and base pull-out currents can be set to desired values by properly adjusting the positive and negative amplitudes of the pulse. The base supply is, of course, not required. It was found that offsetting the Tektronix 109 Pulse Generator deteriorated the pulse rise time considerably (to approximately 3 nanoseconds for the dc offset used). It was decided that this deterioration was not acceptable in the testing of a transistor where typical times measured are on the order of 10 nanoseconds. In the circuit of Figure 8, the base pull-out current is set by viewing the differential voltage V ,.. For a given pulse amplitude, the magnitude of the base pull-out current depends strongly on the base- emitter voltage of the test transistor. The base-emitter voltage varies slightly during the switching process, and as a consequence the base current varies also. Equally important is the unit to unit variation of the base-emitter saturation voltage, which requires an adjustment of the pulse amplitude to yield the desired base current for each transis- tor, even when the base-emitter voltage remains essentially constant during the switching transient. Since a sample of sixty transistors was to be tested, it was decided that these conditions are not acceptable. A circuit designed to overcome these difficulties is shown in Figure 9« The circuit contains two constant current generators (regu- lated by zener diodes). The first current generator supplies a constant base drive current to the test transistor, as long as the pulse is not applied. The magnitude of that current is determined by the variable 21 < m C5 O En CO W CO o E-i D o o O n O o 10 ii i- tr ■WAr *' co o ho •H 22 o -VwV- >° IH" St UJZ »- 3 +|Hi« ffi II O o II cc o 00 < in CD 1 1 VW — < CM it CO ■AAAr -w — est- CC Z o (NJ LU H 0> z C\J 4. O- o II X. cc- -WAr ao? -VSAr lO O o o CM ii H<3 tH|lH |lS CM •• CO CC CM LU CC CM 23 resistor in the emitter lead. The second current generator conducts a current of approximately I + I _• Again the value of the current is BA. Bd determined by the setting of the emitter resistor. Except when the pulse is applied, this generator draws current through the base-emitter diode of the lower 2N918 transistor. When the pulse is applied, the upper 2N918 supplies current to the generator. The upper 2N918, during application of the pulse, draws current into its collector from both the first current generator and the base of the test transistor. The base drive and pull-out currents are set by viewing the differential voltage V-..., on an oscilloscope. The desired saturation collector BB current is determined by the collector supply voltage. The current switching 2N918 transistors deteriorate the rise time of the current pulse by less than one nanosecond, and the current waveform is not perfectly smooth due, presumably, to the sequential switching of the pair. It was decided that these conditions are acceptable. It was necessary to offset the emitter of the test transistor to match the dc levels of the rest of the circuit. It would have been preferable to offset the applied pulse to minimize wiring capacity near the test transistor, but, as mentioned previously, an offset produced an unacceptable deterioration of the current pulse rise time. The storage time was measured with the use of a Tektronic 567 Sampling Oscilloscope with a Type 6R1 Digital Readout Unit, thus facili- tating the accumulation of data in a reasonable length of time and eliminating error in reading oscilloscope patterns, except for the initial settings of the base currents. The current I can be set accurately with no difficulty. Due to Bl the switching of the 2N918 pair and the resulting imperfection in the 2k base current waveform, the setting of the current J is somewhat imprecise. In the worst case the estimated error in the setting of this current is no greater than 0. 5 mA. (The lowest value of I p under con- sideration is 5 mA. ) An error of this magnitude would cause an error in the predicted value of storage time of about one nanosecond, again in the worst case. A typical error would be less than 0.2 nanosecond. The results of the storage time measurements are presented in the next section. REFERENCES 1 R. Beaufoy, J. J. Sparkes, "The Junction Transistor as a Charge- Controlled Device, " ATE Journal, 3:^:310-327, October, 1957. C. L. Searle, A. R. Boothroyd, E. J. Angelo, Jr., P. E. Gray, D. 0. Pederson, Elementary Circuit Properties of Transistors, pp. 286-288. J. Millman, H. T. Taub, Pulse , Digital , and Switching Waveforms , pp. 789-790. h R. D. Thornton, J. G. Linvill, E. R. Chenette, H. L. Ablin, J. N. Harris, A. R. Boothroyd, J. Willis, C. L. Searle, Handbook of Basic Transistor Circuits and Measurements , pp. 1^-1-143 • R. P. Nanavati, "Prediction of Storage Time in Junction Transis- tors, " IRE Transactions on Electron Devices , ED-7-l:9-15> January, I960. 25 5. DISCUSSION OF EXPERIMENTAL RESULTS Variation of Storage Time with Base Drive Current and Base Pull-Out Current In order to test the validity and accuracy of the prediction equation, the storage time was predicted and measured as a function of each of the base currents. In must be pointed out at the outset that the values predicted via Equation (10) employ the measured parameters T o and (3 , both parameters being measured at the bias conditions of interest J? and by the methods previously discussed. Hence, any inaccuracy in the determination of these parameters would be reflected as an apparent error in the predicted value of storage time as compared to the direct measurement using the circuit of Figure 9* It is felt that mean values for the sample carry more statistical significance than measurements for any single unit. All data plotted, quoted, or tabulated refer to mean values for the sample, unless other- wise noted. Data for the first three units, which appear to be represen- tative of the sample, are tabulated in Appendix II. It is seen there that typical deviations of predicted times relative to measured times are about 7 per cent, although the single highest deviation is 23.6 per cent which represents an absolute deviation of 0.7 ns. The computer-generated plot of mean predicted storage time as a function of base drive current for two different values of base pull-out current is shown in Figure 10. The mean measured data are also plotted on that figure for comparison purposes. The largest absolute deviation of predicted storage time from a measured value is 0.9 ns which occurs on- the upper curve (i = 10 mA) of Figure 10 at a drive current of 20 mA. DC. This corresponds to a percentage deviation of about 7 P er cent. The 26 ID 3 ID _l _l 3 H 0. a. d £ bJ u in > cc ^H 3 3 u O M tc ac bJ a. g 8 T O 1— 00*h£ 1— 00 '02 + + + + + CC D ■ -o 8 8 00*91 00'2l 00*8 ISNJ 3WI1 3Gdy01S 00 'h OO- PS CC CC o 3 « o H o H to •H 27 largest percentage deviation (17 per cent) occurs on the upper curve at a drive current of 5 mA. The absolute deviation at that point is 0.8 ns. The mean (unsigned) deviation of the (mean) predicted value relative to the (mean) measured value is slightly less than 5 per cent. The computer- generated plot of storage time as a function of base pull-out current is shown in Figure 11. The largest absolute deviation here is also 0.9 ns which occurs on the lower curve (I 1 = 10 mA) at a pull-out current of 5 mA« The largest percentage deviation occurs on the lower curve at a pull-out current of 30 mA. The absolute deviation at that point is 0.4 ns or about 13.4 per cent. The mean deviation for the variation with pull-out current is again slightly less than 5 per cent. The computer programs necessary to generate the plots of Figures 10 and 11 are listed in Appendix III. The IBM 709*+ computer was used to generate the data for the predicted curves, and these curves and the measured data points were plotted by the Calcomp Plotter. Variation of Storage Time with Collector Current and Voltage As one can readily see from Equation (10), for moderate collector currents (on the same order as the base drive and pull-out currents), the storage time prediction is relatively free of variation with collector current since that current is divided by the current gain of the transistor. The above is true under the assumption that the satura- tion charge analysis parameter is relatively constant and independent of collector current and voltage. Recall that the collector current we are discussing is the saturation collector current (approximately V--/R ). As shown in Table 1, it was found that such was not the case for 28 a. r tx cc IT Q O ex £■ UJ UJ > > in en CC «— » 3 3 O O ii CC CC (Pi d UJ 0. g I— 00 '01 (— 00 'S2 + + + + + S p o o5 S o o JO, i — ,ij CM -y ^S CC CC OCJ o I ..m o o --o 8 8 00* * oo'oe oo'si oo:o\ ISM 3WI1 30UUD1S oo -s 29 the transistor tested. Analogous data for the first three units are found in Appendix II. TABLE 1 X C t S *S R c = 1000 ohms) (R = 500 ohms) mA ns ns 2 18.6 16.9 5 11.4 6.7 10 6.8 5-9 15 6.8 6.2 20 6.k 6.3 25 6.5 6.6 30 6.8 6.6 The storage time was measured at several values of collector current for two different values of load resistance; both base currents were held fixed at 15 mA. It should be noted that, for collector currents below 10 mA, the storage time varied considerably and in a way that is totally unpredicted by Equation (10) and the theory leading to its development. For collector currents in excess of 10 mA, the storage time is relatively constant. The variation that does exist is still in excess of that predicted and cannot be explained by inaccuracies in measurement or variation of the current gain parameter, although the latter accounts for a small part of the variation. It should also be noted that the storage time varied somewhat with load resistance, although this variation is fairly small compared to the variation with collector current. Sparkes also found that the charge analysis parameter varies in an unpredictable way with collector current, although he also observed a variation of the parameter with base drive current. Mention is also 2 made of this variation in the Switching Transistor Handbook . Such unpredicted variation of storage time with collector current is also 3 illustrated in The Semiconductor Data Book . The data listed in Tables 2 and 3 are read from graphs presented in that book and refer to test conditions which are comparable to those under which the data of Table 1 were obtained in the sense that, to a good approximation, t = O.69 T . o S In particular, the test condition for the data of Tables 2 and 3 is h ■ 10 hi ■ 10 he Table 2 refers to a 2N2*+8l transistor and Table 3 refers to a 2N3250 unit; both transistors are silicon switching units. It is most inter- esting to note that the data of Table 2 closely parallel those of Table 1, (both curves being convex), whereas the data of Table 3 are read from a curve which is clearly concave. TABLE 2 \ *s mA ns 2 20 5 12 10 8.0 15 6.2 20 5.9 25 6.0 30 6.0 31 TABLE 3 r c *B mA ns 2 80 5 110 10 125 15 120 20 115 25 105 30 98 REFERENCES 1 J. J. Sparkes, "A Study of the Charge Control Parameters of Transistors/' IRE Proceedings, 48:1696-1705, October, i960. 2 Switching Transistor Handbook , pp. 115-128. 3 The Semiconductor Data Book, pp. 8-1^7, 8-210. 6. CONCLUSION It has been found that the charge analysis prediction Equation (10) employing the "total" saturation charge analysis parameter T_ gives acceptable predictions of the variation of storage time with both base currents provided that both T„ and p are measured at the proper collector bias current and voltage. Typical deviations, for the sample tested, were about 5 per cent. It was also found that the charge analysis parameter T c and hence o the storage time vary considerably with collector current for very low values of collector current (less than 10 mA), but appear to stay rela- tively constant at higher values of current. The parameter also varies slightly with load resistance. The Transistor Switching Handbook offers a possible explanation of the variation of T with bias conditions. A large fraction of the charge injected from the collector could be stored in regions of the base distant from the emitter where surface lifetime could have an appreciable effect. The amount of charge in the area influenced by the surface would be dependent on the bias conditions. Storage of charge in the collector can also considerably modify the effective charge analysis parameter. As collector current is increased, the drop across the collector resistance r increases altering the internal biasing to cause more of the collector injection to occur in the region directly under the emitter. More of the active part of the transistor is now in saturation causing storage time to be partly determined by the rate of diffusion of carriers, stored in the collector, back into the base. Thus, T is not a constant, but is composed of the lifetimes of various regions of the transistor. 33 2 Sparkes also indicates the explanation that a significant portion of saturation charge diffuses away from the region of the base which lies between the emitter and collector, thus affecting the lifetime of the stored charge. He also points out that, at low current levels, the change of the collector depletion layer thickness as the transistor is taken from the edge of saturation into saturation should necessitate the injection of extra base charge leading to higher values of T . It is reasonable to conclude, then, that for the transistor and for the ranges of currents under consideration, Equation (10) provides a suitable prediction equation for storage time if and only if T c is measured at the proper bias condition or if the collector current is kept above 10 mA. Even in the later case it would be preferable to measure the parameters at the desired bias condition. In practical switching circuits, it is common that the collector current exceeds 10 mA by a considerable margin, so that the variation in T Q would be expected to be small. However, it must also be kept in mind o that practical switching circuits do not usually provide constant or exactly known base currents or load resistances, so that, in some situations, application of the prediction equation may yield only a crude approximation to the actual storage time. Further, it must be borne in mind that these conclusions are valid only for the transistor tested and over the range of currents considered, although qualitatively similar results could be expected for other transistors of similar construction. The transistors tested were selected from a sample of 2N3Q11 transistors manufactured in I96U by Texas Instruments and pur- chased by the Digital Computer Laboratory under a special specification list. They are planar, passivated, epitaxial silicon units. REFERENCES 1 Switching Transistor Handbook , 1963, Motorola, Inc., 120-121. 2 J. J. Sparkes, "A Study of the Charge Control Parameters of Transistors, " IRE Proceedings , 48:1696-1704, October, 196 . 35 BIBLIOGRAPHY Baker, A. N. , "Charge Analysis of Transistor Behavior/' IRE Proceedings , 48:9^9-950, May, i960. Bashkow, T. R. , "Effect of Nonlinear Collector Capacitance on Collector Current Rise Time, " IRE Transactions on Electron Devices , ED-3: 4: 167-172, October, 1956. Beaufoy, R. , Sparkes, J. J. "The Junction Transistor as a Charge- Controlled Device, " ATE Journal, 3:4:310-327, October, 1957- Cleary, J. F. , Editor, Transistor Manual, Syracuse, General Electric Company, 1964. Easley, J. W., "The Effect of Collector Capacity on the Transient Response of Junction Transistors, " IRE Transactions on Electron Devices, ED-4:l:6-l4, January, 1957 • Ebers, J. J., Moll, J. L., "Large- Signal Behavior of Junction Transis- tors, " IRE Pro£eedings, 42:1761-1772, December, 1954. Gray, P. E. , DeWitt, D., Boothroyd, A. R., Gibbons, J. F. , Physical Electronics and Circuit Models of Transistors, New York, John Wiley and Sons, Inc., 1964. Harris, J. N., Gray, P. E., Searle , c. L., Digital Transistor Circuits , New York, John Wiley & Sons, Inc., 1966. Kuno, H. J., "Rise and Fall Time Calculations of Junction Transistors," IEEE Transactions on Electron Devices , ED- 11: 4:151-155, April, 1964. Millman, J., Taub, H. T., Pulse , Digital , and Switching Waveforms , New York, McGraw-Hill Book Company, 19^5 . Moll, J. L., "Large-Signal Transient Response of Junction Transistors," IRE Proceedings , 42:1773-1784, December, 1954. Nanavati, R. P., "Prediction of Storage Time in Junction Transistors," IRE Transactions on Electron Devices , ED-7:1:9-15> January, i960. Phillips, A. B. , Transistor Engineering , New York, McGraw-Hill Book Company, 1962. Searle, C. L., Boothroyd, A. R. , Angelo, E. J., Jr., Gray, P. E. , Pederson, D. 0. , Elementary Circuit Properties of Transistors , New York, John Wiley & Sons, Inc., 1964. The Semiconductor Data Book , 3rd Edition, Phoenix, Motorola, Inc., ■ 1968. 36 Switching Transistor Handbook , Phoenix, Motorola, Inc., 1963* Thornton, R. D. , Linvill, J. G. , Chenette, E. R. , Ablin, H. L. , Harri J. N. , Boothroyd, A. R. , Willis, J., Searle, C. L., Handbook of Basic Transistor Circuits and Measurements, New York, John Wiley & Sons, Inc., 19661. 37 APPENDIX I JUNCTION CAPACITY CONSIDERATIONS In an effort to experimentally separate the excess saturation charge from the junction capacity stored charge, the junction capaci- tances were measured as functions of (reverse) voltage. Then, with a knowledge of the excursions of junction applied voltages, the junction capacitances, and the pull-out current, one can determine the portion of storage time which is devoted to removing excess saturation charge and the portion which is devoted to removing junction capacity stored charge. To this end, the junction capacitances were measured with a Boonton Model D-7^- capacitance bridge with a variable internal reverse bias. If the junction areas behave as true capacitors, then the charge stored when a reverse voltage is applied will be the same, in magnitude, as when a forward voltage of the same magnitude is applied. It will be assumed that this is the case. Combining the storage time measurements of Table 1 with a knowledge of the junction capacitances and voltage excursions, one can then com- plete Tables h and 5 which correspond to load resistances of 1000 ohms and 500 ohms, respectively. In both tables, t represents the amount of time necessary to remove the junction capacity charges. 38 TABLE 4 J C *B \ T S T S mA ns ns ns ns 2 18.6 0.9 27.2 26.0 5 11.4 0.8 16.8 15.6 10 6.8 0.7 10.2 9.2 15 6.8 0.6 10.4 9.5 20 6.4 0.5 9« 9 9.2 25 6.5 0.4 10.3 9-7 30 6.5 0o4 10.9 10.3 mA TABLE 5 t t T„ T s Q S S ns ns ns ns 16.9 0.7 24.6 23.6 6.7 0.7 9-9 8.8 5-9 0.7 8.9 7-9 6.2 0.6 9.5 8.5 6.3 0.6 9.8 9.0 6.6 0.5 10.4 9.6 6.6 0.5 10.7 9-9 2 5 10 15 20 25 30 39 APPEM)IX II LISTING OF DATA Data indicating the variation of storage time with base and collector currents for the first three units are listed in the tables which follow immediately. For reference and completeness purposes, all measured data are listed on succeeding pages. Relevant test conditions accompany these data. The term tu—-.-™. represents the time allotted to discharging the WIRING wiring capacitance (about 1.7 pf); t TO mus 't be subtracted from t to obtain the actual storage time of the transistor. TABLE 6 (I c - 15 mA, I B2 = 10 mA) Measured Storage Time Predicted Storage Time I„, Unit 1 Unit 2 Unit 3 Unit 1 Unit 2 Unit 3 ID J. mA ns ns ns ns ns ns 5 10 15 20 25 30 k.o 3.8 h.9 3.6 3.3 k.l 6.2 5.8 7.0 6.6 6.0 7-5 8.4 7.7 10.2 8.9 8.1 10.1 10.1 9.3 12.9 10.8 9.9 12.3 11.7 9-9 13-7 12.3 11-3 14. 1 12.7 10.9 15.0 13.7 12.6 15.7 ho Bl mA TABLE 7 (I„ = 15 mA, I BO = 15 mA) B2 Measured Storage Time Unit 1 Unit 2 Unit 3 ns ns ns Predicted Storage Time Unit 1 Unit 2 Unit 3 ns ns ns 5 10 15 20 25 30 2.8 2.6 3-1 2.6 2.1* 2.9 U. 8 h.5 5-3 k.9 ^. 5 5.6 6.7 6.0 7-3 6.8 6.2 7.7 7-8 6.9 9.h 8.3 7-7 9.5 9.2 8.1 11.1 9-7 8.9 11.1 10.3 8.1 11.9 10.9 10.0 12.5 B2 mA TABLE 8 (I c = 15 mA, I B1 = 10 mA) Measured Storage Time Unit 1 Unit 2 Unit 3' ns ns ns Predicted Storage Time Unit 1 Unit 2 Unit 3 ns ns ns 5 10 15 20 25 30 9. if 8.8 11-7 10.2 9.4 11-7 6.2 5.8 7.0 6.6 6.0 7-5 4.8 4.5 5.3 h.9 4.5 5.6 3.8 3.8 lf.0 3.9 3-6 If.If 3.5 3-7 3.9 3.2 3.0 3.7 3.0 3.1 3.4 2.8 2.5 3.2 TABLE 9 4l X B2 mA (I c = 15 mA, I B1 = 15 mA) Measured Storage Time Unit 1 Unit 2 Unit 3 ns ns ns Predicted Storage Time Unit 1 Unit 2 Unit 3 ns ns ns 5 10 15 20 25 30 12.8 10.5 14.5 13.2 12.1 15.0 8.1+ 7-7 10.2 8.9 8.1 10.1 6.7 6.0 7-3 6.8 6.2 7.7 5.6 5.4 6.0 5-5 5-0 6.3 4.6 4.7 5-2 4.6 4.2 5.3 4.1 4.0 4.4 4.0 3.7 4.6 TABLE 10 (I x c mA Bl 15 mA, I = 15 mA, R = 1000 ohms) B^- Measured Storage Time Unit 1 Unit 2 Unit 3 ns ns ns 2 5 10 15 20 25 30 17.5 17.4 19.2 12.3 9.0 12.3 6.4 5.9 7.2 6.7 6.0 7-3 6.0 5-3 6.8 5.7 5.2 7.0 5-7 5-1 7.3 k2 TABLE 11 (I B1 = 15 mA, I B2 = 15 mA, R c = 500 ohms) Measured Storage Time I Unit 1 Unit 2 Unit 3 mA ns ns ns 15.4 16.4 15.5 5 6.3 6.2 6.8 10 5.8 5-7 6.2 15 6.0 5-1 6.7 20 5-7 4.9 6.9 25 5-7 4.9 7.0 30 5-7 4.9 7.0 43 TABLE 12 Unit P F (I E = 15 mA) Unit 3 f (i £ = 15 mA) 1 26.8 2 26.8 3 25.6 4 24.6 5 22.3 6 26.2 7 26.6 8 23.2 9 28.8 10 20.3 11 23.3 12 24.1 13 21.4 14 22.3 15 25-7 16 33.6 17 31.0 18 24.6 19 29.5 20 29.5 21 28.1 22 22.7 23 26.1 24 28.1 25 25.7 26 24.6 27 24.6 28 25.6 29 34.5 30 32.7 31 24.1 32 24.6 33 24.1 34 34.5 35 29.5 36 26.8 37 24.1 38 27.4 39 24.6 4o 23-7 41 35-5 42 28.1 43 28.8 44 22.3 45 22.7 46 32.6 hi 28.1 48 31.0 49 23.6 50 33.5 51 30.9 52 26.3 53 32.7 54 26.2 55 26.2 56 26.2 57 24.1 58 28.7 59 21.1 60 26.8 44 Unit R C K ohms pf 1 2.7 3.8 2 2.7 3.5 3 2.8 4.2 4 2.8 3-9 5 2.8 3.4 6 2.7 4.2 7 2.7 4.4 8 2.8 3.8 9 2.7 3-8 10 2.8 3-4 11 2.8 4.0 12 2.8 3.8 13 2.8 3-6 14 2.8 4.0 15 2.7 4.o 16 2.7 4.0 17 2.7 2.85 18 2.8 4.0 19 2.7 2.55 20 2.7 4.0 21 2.7 4.4 22 2.8 3-7 23 2.7 2.45 24 2.7 3-2 25 2.7 4.5 26 2.8 4.1 27 2.8 4.1 28 2.8 4.2 29 2.6 4.0 30 2.6 4.5 TABLE 13 ■ (I c = 15 aA, 1^ = 15 mA) T Q Unit R c T s s ns K ohms i_l m I ■ 10.3 31 2.8 3.9 10.9 9.^5 32 2.8 3.6 10.1 11.8 33 2.8 4.0 11.2 10.9 34 2.6 2.8 7-3 9-5 35 2.7 4.0 10.8 11.3 36 2.7 3.7 10.0 11.9 37 2.8 3.9 10.9 10.6 38 2.7 4.4 11.9 10.3 39 2.8 4.0 11.2 9-5 40 2.8 4.0 11.2 11.2 41 2.5 3.9 9-75 10.6 42 2.7 3.7 10.0 10.1 43 2.7 4.4 11.9 11.2 44 2.8 3.6 10.1 10.8 45 2.8 3.9 10.9 10.8 46 2.6 4.1 10.65 7.7 47 2.7 4.0 10.8 11.2 48 2.6 4.0 10.4 6.9 49 2.75 3.9 10.7 10.8 50 2.6 3.9 10.1 11-9 51 2.6 3.9 10.1 10.3 52 2.7 4.2 11.3 6.6 53 2.65 4.8 12.7 8.65 54 2.7 4.3 11.6 12.2 55 2.7 4.5 12.15 11.5 56 2.7 4.5 12.15 11.5 57 2.75 3.9 10.7 11.7 58 2.65 3.5 9-3 10.4 59 2.8 3.4 9.5 11-7 60 2.7 4.1 11.1 TABLE l4A 45 Unit t 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 IT 18 19 20 21 22 23 24 25 26 27 28 29 30 SI ns 17-73 17-63 19.41 19.40 15.64 18.95 20.05 19.20 19.16 18.76 19.80 19.23 17.96 20.05 19.60 19.21 17.07 19.22 16.64 15.69 22.26 18.29 15.75 17.04 21.60 20.29 20.20 19.45 19.15 19.17 S2 ns 12.56 9.26 12.58 12.41 8.41 12.30 13.80 12.20 12.00 11.63 12.91 12.20 11.46 13.14 12.60 12.02 8.36 12.20 8.21 8.62 13.64 11.60 7.94 8.27 13.78 13.40 12.99 12.85 11.80 12.31 S3 ns 6.65 6.16 7.40 7.43 6.20 7.39 8.18 7.26 7.13 6.61 7.44 7.22 "6.61 7.60 7.4o 7.05 5.21 7.20 5.03 5.58 8.07 6.80 5.00 5.61 8.20 7.80 7-75 7-75 6.98 6.61 Test: R (ohms) I c (mA) I B1 (mA) I B2 (mA) V CB(SAT) ^ V CE(SAT) ^ VlRING (ns) 1000 2 15 15 -2.30 6.056 0.26 °s4 ns 6.90 6.22 7.50 7.44 6.35 7-69 8.15 7.22 7.06 6.7O 7.50 7-13 6.75 7-35 7.29 7.09 5.00 7.32 4.52 7.08 7.91 6.91 4.32 5.72 8.12 7.54 6.48 7.70 6.76 7.79 Unit t t. SI S2 ns ns t S3 t s4 ns ns 1000 5 15 15 -2.30 0.072 0.26 31 32 33 34 35 36 37 38 39 4o 4l k2 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 19.25 17.86 20.24 17.20 20.02 18.39 19.27 18.94 19.20 17.38 18.55 19.01 22.38 17.60 19.69 19-48 19.29 16.97 19.41 18.83 18.60 19.00 19.78 18.98 19.32 20.03 19.11 17.31 17.80 19.47 1000 10 15 15 -2.15 0.076 0.24 12.09 11.39 13.00 8.36 13.30 11.60 12.11 12.14 12.01 IO.58 11.56 11.84 13.63 9.59 12.65 12.38 12.23 8.67 12.43 11.59 11.42 12.22 13.56 12.24 13.61 13.40 12.21 8.41 9.83 12.66 1000 15 15 15 -2.17 0.093 0.25 7.27 6.67 7.61 5.4i 7.96 6.80 7.21 7.60 7.38 7.20 6.98 7.21 8.4o 6.81 7.61 7.4l 7.44 6.85 7.61 7.05 7.00 7.76 8.47 8.61 7.68 8.41 7-47 6.60 6.63 7.67 7.11 6.66 7.24 4.72 7.88 6.68 7.08 7.86 7.10 7.08 6.53 6.69 7.86 6.59 7.12 7.08 7.H 7.10 7.16 6.66 6.86 7-55 8.55 7-73 8.07 8.02 7.20 6.48 6.37 7.46 TABLE 14B 1+6 Unit t 1 2 3 k 5 6 7 8 9 10 n 12 13 11+ 15 16 17 18 19 20 21 22 23 2k 25 26 27 28 29 30 Test: S5 ns 6.20 5-58 7.00 6.81 5-78 7-31 7-83 6.66 6.1+8 6.16 6.91 6.68 6.2k 6.81+ 6.80 6.68 4.57 6.80 14.35 6.58 7.62 6.56 1+.03 5.12 7.63 7-03 6.92 7.17 6.21 7.27 ^S6 ns 5.90 5.1+0 7.21+ 6.71 5.49 7.81 11.10 6.31 6.12 5.83 7.01 6.20 5.76 6.1+1+ 6.60 6.3k 1+.10 6.62 3.81+ 6.00 9.66 6.05 3-56 1+.82 10.17 6.86 6.73 7.61 5.82 7.00 S7 ns 5.93 5.33 7.51 7.03 5.45 8.23 11.1+1+ 6.60 6.21 5.70 7-32 6.36 5.78 6.91+ 7.00 6.61 1+.38 6.9k 1+.01 6.01 10.57 6.18 3.60 1+.87 11.25 7.1+1 7.13 8.11 5.98 8.26 R (ohms) I c (mA) I B1 (*A) I B2 (mA) cb(sat) v ; v ce(sat) ^ Firing (ns) 1000 20 15 15 -2.15 0. 109 0.21+ ^s8 ns 15.62 16.58 15.71 18.39 17.85 16.71 17.61 17.28 17.15 17.19 17.1+1+ 17.02 16.7k 17-63 17.^5 17.21+ 16.63 17.01 16.38 I6.78 19.38 16.1+1+ 15.67 I6.78 17.82 17.73 17.60 17.01+ 17.11+ 17.37 1000 25 15 15 -2.16 0.106 0.25 Unit t 31 32 33 3k 35 36 37 38 39 1+0 1+1 1+2 1+3 1+1+ 45 1+6 1+7 1+8 49 50 51 52 53 54 55 56 57 58 59 60 S5 ns 6.74 6.22 6.77 1+.1+5 7-52 6.28 6.60 7-1+1 6.73 6.61 6.13 6.28 7-32 6.08 6.59 6.62 6.74 6.57 6.75 6.16 6.1+5 7.20 8.32 7-37 7.63 7.60 6.81 6.01 5.98 7.00 7 1000 30 15 15 -2.18 0.102 0.25 ^S6 ns 6.58 5.98 6.60 1+.15 8.60 5-77 6.30 8.16 6.1+9 6.18 5.71 5.80 8.22 5.71 6.26 6.21 6.61 6.21 6.60 5.81 6.02 7.50 12.70 8.21 8.61+ 9.71 6.81 6.60 6.74 7-83 8 500 2 15 15 -I.94 0.057 0.22 S7 ns 7.01 5.74 7.26 1+.20 8.74 6.00 6.60 8.36 6.79 6.20 5.69 5.88 8.69 5.65 6.60 6.35 7.20 6.30 7.00 5.81 6.12 8.00 13.41 8.1+1 9.94 10.21 7.23 5.61 5.82 8.65 °S8 ns 17.35 16.55 17.69 16.86 17.58 16.69 17.18 16.1+8 17.09 18.30 16.60 16.80 17.61 16.1+3 17.25 17.34 17.28 18.30 17.1+0 17.51 16.96 16.93 17.15 16.90 16.94 17.65 17.12 18.17 16.88 17.33 TABLE ll+C 1+7 Unit t S9 t sio t sn ns ns ns 1 6.1+9 6.0k 6.18 2 6.1+0 5-60 5-3*+ 3 7.00 6. ho 6.90 h 6.81 6.25 6.61 5 6.3h 5.80 5.61 6 7.00 6.80 7.U1 7 8.59 8.85 10.51 8 6.80 6.21 6.45 9 6.69 6.18 6.31 10 6.61 5.9I+ 6.00 11 7.01 6.^+0 6.73 12 6.81 6.20 6.38 13 6.55 6.01 6.01 11+ 7.08 6.23 6.36 15 6.68 6.20 6.hl 16 6.73 6.10 6.36 17 6.18 3.1+2 3.69 18 6.80 6.23 6.1+3 19 6.18 3.37 3.39 20 6.1+1 6.01 6.25 21 7.78 6.71 8.07 22 6.61 6.03 6.23 23 6.03 3.17 3.20 21+ 6.20 1+.00 1+.1+6 25 8.21 7.1+2 8.78 26 7.1+1 6. 51+ 6.65 27 7.12 6.37 6.h6 28 7.25 6.61 7.20 29 6.61 5.81 5.85 30 7.16 7.03 7.61 Test: 9 R (ohms) I c (mA) I B1 (mA) I ffi M) V CB(SAT) (V) V CE(SAT) (V) VlRING (ns) 500 5 15 15 -1.93 O.070 0.22 t S12 ns 5.95 5-15 7.07 6.77 5.1+0 7.51 IO.87 6.1+8 6.26 5.73 6.88 6.28 5.86 6.35 6.1+8 6. 21+ 3.71 6.50 3.5l+ 6.13 8.91 6.17 3.19 1+.37 9.1+6 6.70 6.57 7-35 5.81 7.71 10 500 10 15 15 -1.93 0.087 0.22 Unit S *S10 31 32 33 31+ 35 36 37 38 39 1+0 1+1 1+2 i+3 1+1+ k$ he hi 1+8 ■ 1+9 50 51 52 53 5^ 55 56 57 58 59 60 11 500 15 15 15 -1.95 O.087 0.22 ns 6.80 6.59 7.05 6.21+ 7.25 6.60 6.81 7.21 6.80 6.61 6.61 6.61 7.85 6.1+1 6.98 6.78 6.85 6.1+1+ 6.83 6.51 6.50 7.00 11.21+ 7.00 7.1+1 7-95 6.81 6. 21+ 6.1+1 6.93 ns 6.20 5.81 6.19 3.50 7.10 5.80 6.01+ 7.25 6.07 6.08 5.78 5.88 6.1+3 5.78 6.09 6.00 6.18 6.11 6.20 5.62 5.89 6.70 11.19 6.92 7.89 7.61 6.01 5.61 5.61 6.31 12 500 20 15 15 -1-95 0.098 0.22 sn ns 6.1+1 5. 81+ 6.22 3.60 7-95 5.79 6.21 7.76 6.1+0 6.1+0 5.85 5-95 7.25 5. 81+ 6.23 6.20 6.37 6.36 6.1+0 5.65 6.01 7.01+ 12.1+0 7.60 8.52 8.60 6.1+5 5-1+9 5.60 6.63 S12 ns 6.53 5.71 6.31 3.70 8.15 5.70 6.30 7.81 6.35 6.22 5-70 5. 81+ 7.70 5.70 6.25 6.25 6.1+8 6.33 6.50 5.65 5.97 7.30 12.50 7.72 8.93 8. 91+ 6.62 5-1+5 5.53 7.13 TABLE l4D Unit t gl3 t si4 t S15 t si6 Unit t S13 t si4 *ns t si6 ns ns ns ns ns ns ns ns 1 5-96 5.89 4.15 6.54 31 6.61 6.75 4-97 7.16 2 5-l4 5.H 3.96 6.12 32 5.73 5.71 4.11 6.41 3 7-19 7.23 5.08 7.28 33 6.64 7.01 5.06 6.86 4 6.76 6.7I 4.73 7.01 34 3-93 3.93 3.58 5.43 5 5-38 5.20 3.96 6.25 35 8.61 8.65 5.52 8.34 6 7-71 7-88 5.38 7.71 36 5.52 5.61 4.09 5.42 7 11. 23 11.52 5.77 9.68 37 6.38 6.46 4.70 6.84 8 6.1+0 6.33 4.47 6.83 38 7.91 8.06 5.40 7.85 9 6.21 6.19 4.50 6.74 39 6.50 6.54 4.70 6.96 10 5.79 5.70 4.09 6.4o 40 6.20 6.15 4.26 6.73 11 6. 96 6.99 4.68 7.14 41 5.65 5.70 4.17 6.4l 12 6.21 6.26 4.29 6.70 42 5.84 5.91 4.12 6.53 13 5-83 5.71 4.15 6.45 43 8.00 8.52 5.48 7.73 14 6. 56 6.71 4.58 6.84 44 5.69 5.24 4.08 6.4l 15 6. 60 6.78 4.84 6.94 45 6.39 6.51 4.58 6.73 16 6.4l 6.52 4.59 6.84 46 6.35 6.33 4.39 6.69 17 3.82 3.78 3.64 5-73 47 6.74 6.98 5.02 6.98 18 6.65 6.87 4.86 6.99 .48 6.23 6.17 4.37 6.79 19 3.80 3-88 3.58 5.52 49 6.60 6.71 5.10 6.95 20 6.01 5-99 4.20 6.63 50 5.80 5-83 4.09 6.4o 21 9. 99 10.73 5.76 8.75 51 6.00 5.99 4.18 6.51 22 6. 19 6.10 4.26 6.67 52 7.4i 7.70 5.33 7.44 23 3.32 3.33 3.52 5.22 53 13.04 13.51 6.11 10.73 24 4.58 4.50 3.81 5.96 54 7.94 8.13 5.42 7.86 25 10.41 11.02 5.83 9.61 55 9-39 9.88 5.61 8.59 26 6. 86 7.11 4.74 7.10 56 9.60 10.15 5.74 8.64 27 6.76 6.93 4.84 7.04 57 6.83 6.95 4.32 7.13 28 7.61 7.93 5.19 7-43 58 5.42 5.40 4.09 6.37 29 5.81 5.88 4.18 6.52 59 5.72 5.78 4.24 6.4o 30 7.90 8.09 5-36 7.86 60 7.96 8.53 5-59 7-32 Test: 15 > 14 15 16 R (ohms) 500 500 1000 1000 I c (mA) 25 3o 15 15 I B1 (mA) 15 15 5 10 I B2 (mA) 15 15 10 10 v cb(sat) ^ -1.95 -1.94 -1.13 -1.75 v ce(sat) ^ 0.103 0.150 0.120 < 3.102 Firing (ns) 0.22 0.22 0.19 0.30 TABLE l4E 49 Unit t 1 2 3 4 5 6 7 8 9 10 n 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Test: S17 ns 8.80 8.07 10.53 10.61 8.26 12.41 15.48 9-90 8.99 8.58 11.42 9.37 8.61 9-93 9.86 9.31 7-31 10.02 7.27 8.98 13.61 9.00 7.16 7.88 14.19 11.37 10.56 12.52 8.56 13.11 u si8 ns 10.57 9.78 13.42 12.68 9.96 14.20 16.69 12.34 10.65 10.25 13.41 II.71 10.38 12.21 11.71 10.83 8.81 11.66 8.60 12.09 15.60 11-95 8.61 9-44 17.54 14.38 13.72 15.40 10.20 15.81 S19 ns 12.34 10.51 14.32 i4.o4 10.67 15.45 19.39 14.10 12.42 11.61 14.83 13.76 12.11 13.92 13.39 12.78 8.66 13.60 8.30 13.10 16.49 12.82 8.32 9.03 17.64 16.01 14.10 15.88 10.83 16.26 R (ohms) I c (mA) I B1 (M) I B2 (mA) V CB(SAT) ' V ' V CE(SAT) (V) Wng (ns) 17 1000 15 15 10 -2.25 0.100 0.38 S20 ns 13.41 11.63 15.71 15.22 12.35 16.60 21.13 15.52 13.51 12.82 16.27 15.08 13.31 15.27 14.19 13.63 8.86 14.69 8.54 14.10 17.75 13.81 8.58 9.60 19.55 16.39 15.38 17.12 12.32 17.58 18 1000 15 20 10 -3.02 0.089 0.51 Unit t 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 S17 ns 9.82 8.56 9.27 7.34 13.11 8.43 9.15 13.15 9.50 9.27 8.34 8.66 12.78 8.44 9.02 8.96 9-34 9.25 9-53 8.42 8.80 12.15 16.53 12.75 14.01 14.06 9.86 8.42 8.28 11.13 19 1000 15 25 10 -3.55 0.089 0.60 u si8 ns 12.61 10.26 11.08 9.02 15.81 10.26 11.80 16.12 12.46 12.66 10.20 10.47 15.46 10.23 11.25 11.39 11.44 12.23 12.41 10.22 11.10 14.81 19.41 15.44 17.50 17.34 12.27 10.01 9.85 13.42 20 1000 15 30 10 -4.io 0.086 0.70 S19 S20 ns ns 12.97 11.22 12.66 8.47 16.21 11.42 12.51 16.66 12.71 13.40 10.90 11.68 15.85 11.09 12.50 12.36 12.42 12.71 12.83 10.92 12.20 15.18 19.79 15.75 17.61 17.47 12.51 10.01 9.49 13.50 13.80 11.68 13.60 8.86 17.47 12.88 13.61 17.99 13.72 14.50 12.54 12.89 17.18 13.66 13.70 13.41 13.39 13.69 13.72 12.43 13.38 16.57 22.32 17.01 19.57 19.15 13.56 12.01 11.17 14.21 50 TABLE i4f Unit t S21 t S22 t S23 t S24 Unit t S21 t S22 t S23 t S24 ns ns ns ns ns ns ns ns 1 10.72 9.58 8.13 5.03 31 11.39 11.01 9.37 5.31 2 8.61 8.49 7.24 4.76 32 9.94 9-77 8.41 4.56 3 12.38 11.48 9.72 5.52 33 IO.76 9.79 8.43 4.58 4 12.01 IO.83 9.24 5.34 34 8.04 7.80 6.77 3.61 5 9.kk 8.67 7-38 4.91 35 13.62 11.84 10.10 5.52 6 12.93 11.51 9-77 5.17 36 10.03 9.66 8.36 5.18 7 15.80 13.86 11.78 5.76 37 11.01 10.68 9.12 5-04 8 12.19 10.48 8.90 5.32 38 14.11 11.70 9.96 5.48 9 10.81 10.34 8.79 5.33 39 IO.98 10.52 8.98 5.02 10 10.01 10.10 8.60 4.88 4o 11.61 11.00 9.36 5.00 11 12.58 11.18 9.52 5.23 4l 9-71 9.43 8.19 4.74 12 11.91 10.60 9.06 5.11 42 10.20 9.96 8.55 4.86 13 IO.56 io.o4 7.87 5.02 43 13.12 12.02 10.24 5.62 14 11.98 10.11 8.74 5.39 44 9.80 9.66 8.21 4.93 15 12.^7 10.13 8.77 5.17 45 10.69 10.48 8.92 5.17 16 11.12 10.34 8.81 5.15 46 10.97 10.52 9.03 5.15 17 7-98 8.30 7-18 3.64 47 10.59 10.34 8.83 5.05 18 11.67 10.36 8.79 5.36 48 11.21 11.00 9.44 5.24 19 7-77 7.46 6.37 3.43 49 11.14 10.91 9.38 5.18 20 11.66 10.57 8.98 5.08 50 9-75 9.58 8.18 4.81 21 13. to 11.83 10.09 5.62 51 11.01 10.66 9-91 5.02 22 11.10 11.01 10.15 5.17 52 12.80 11.57 9.84 5.34 23 7.83 7.56 6.46 3.29 53 16.16 12.71 10.88 5.96 24 8.1+4 8.01 6.82 4.35 54 13.22 12.16 10.36 5.19 25 14.82 12.36 10.58 5.79 55 14.89 12.32 IO.52 5.66 26 12.62 11.31 9.64 5.24 56 14.78 12.16 IO.27 5-59 27 12.00 11.29 9.58 5.23 57 10.97 10.94 9-53 5.17 28 13-21 11.53 9.80 5.32 58 9.26 8.74 7.26 4.88 29 9.36 10.13 8.81 5.18 59 8.79 8.36 7.13 4.70 30 13.48 11.35 9.66 5.54 60 11.62 11.26 9-64 5.48 Test : 21 22 23 24 R (ohms) 1000 1000 1000 1000 I c (mA) 15 15 15 15 Z B1 (mA) 30 25 20 10 J B2 (mA) 15 15 15 15 V CB(; SAT) < V > -4. 10 -3.04 -2, .71 -2.03 v ce(sat) ^ 0.090 0.094 0.: L09 0.116 Firing (ns) 0. 47 0.35 0, • 31 0.23 51 TABLE i4g Unit t S25 t S26 t S27 t S28 Unit t S25 t S26 t S27 t S28 ns ns ns ns ns ns ns ns 1 2.92 3.9^ 3.63 3.13 31 3.06 4.18 3.89 3.38 2 2.76 3.92 3.70 3-20 32 2.63 4.00 3.67 3.17 3 3.23 4.19 3.98 3.48 33 2.65 4.25 3.92 3.45 1+ 3-10 4. 11 3.86 3.36 34 1.79 3.80 3.59 3.H 5 2.88 3.89 3.67 3.19 35 3.32 4.40 4.03 3-53 6 3.24 4.13 3.89 3-42 36 2.88 4.00 3.65 3.06 7 3.38 4.36 4.01 3.56 37 3-03 4.20 3.80 3.42 8 3.07 4.12 3.89 3.32 38 3.33 4.21 3.85 3.34 9 3.04 3.96 3.90 3.46 39 3.07 4.18 3.83 3-32 10 2.92 4.18 3.60 3-11 40 3.05 4.00 3.7^ 3-24 11 3.16 4.08 3.87 3-44 4l 2.66 3.87 3.76 3.28 12 3.05 4.01 3.83 3-42 42 2.72 3.99 3.83 3.39 13 2.91 4.23 4.24 3.81 43 3.19 4.38 3.98 3.44 11+ 3-11 4.22 3.90 3.31 44 2.91 3.91 3.61 3.16 15 3.02 4.21 3.91 3.42 45 3.04 4.18 3.82 3.38 16 3.00 4.23 3.85 3-39 46 3°o8 4.21 3.99 3.65 17 3.58 4.17 3.81 3.30 hi 3-01 4.20 3.98 3.62 18 3.13 4.12 3.85 3.45 48 3.08 4.00 3.71 3.28 19 2.39 3.79 3.55 3.11 ' h 9 2.96 4.21 3.96 3.60 20 3.07 4.15 3.8l 3.29 50 2.59 4.20 3.87 3-42 21 3.31 4.48 4.05 3.56 51 2.97 4.03 3.82 3.38 22 2.96 4.13 3.82 3.34 52 3-20 4.20 3.83 3.41 23 2.13 4.00 3.80 3.30 53 3.56 4.49 4.09 3.71 24 2.65 4.oi 3.80 3.28 54 3.09 4.21 3.97 3.58 25 3.38 4.4i 3.98 3.54 55 3.36 4.25 4.00 3.52 26 3.20 4.25 3.87 3.52 56 3.32 4.40 4.01 3.51 27 3.16 4.21 3.96 3.38 57 3.03 4.20 3.98 3.47 28 3.26 4.21 3.81 3.39 58 2.86 4.07 3.87 3.36 29 2.94 4.10 3.81 3.36 59 2.62 3.98 3.59 3.21 30 3.25 4.44 3.84 3.32 60 3.28 4.36 4.01 3.70 Test 25 26 27 28 R (ohms) 1000 1000 1000 1000 I c (mA) 15 15 15 15 hi (mA) 5 10 10 10 I B2 (mA) 15 20 25 30 V CB( SAT) < V > -1 .08 -1.95 -1 .96 -1.98 V CE( SAT) (V > 0.. 184 0.112 0.: L12 0.115 Firing (ns) .12 0.17 .13 0.11 TABLE ll+H 52 Unit t g29 t g30 t g31 1 2 3 k 5 6 7 8 9 10 11 12 13 11+ 15 16 17 18 19 20 21 22 23 2k 25 26 27 28 29 30 ns 10.12 9-1+6 12.39 12.56 9.67 13.62 16.18 11.92 10.13 9.78 13.31 11.56 10.52 12.01 11.1+5 10.86 8.72 11.57 8.70 11.89 11+.32 II.65 8.1+2 9.31 16.15 11+.32 13.11+ 15.06 9.92 15.50 ns 13.51 11.16 15.12 11+.51 11.16 16.12 19.66 15.10 13.66 12.22 16.77 11+.60 12.92 15.01+ 13.78 13-21 9-31 11+.36 7.92 13.58 17.81 13.18 8.29 9.19 18.92 16.71 11+.68 16.22 12.31 16.16 ns 5-73 5.56 6.19 6.10 5.15 6.00 6.85 5.92 5.79 5.53 6.30 5-99 5.1+6 6.1+7 6.19 5.82 5.01+ 5-97 1+.83 5.30 6.90 5.56 1+.89 5.01+ 6.95 6.6k 6.1+0 6.31 5.61 6.38 Test: R (ohms) I c (mA) I B1 (mA) I B2 (mA) v cb(sat) ^ v ce(sat) ^ Firing (ns) 29 1000 15 10 5 -2.06 0. 102 0.70 S32 ns 4.70 I+.85 5.29 5.20 1+.71 5.15 5.58 5.10 5.07 I+.87 5.22 5.H 1+.97 5.31 5.28 5-11 1+.71 5.15 *+-53 1+.90 5-57 1+.97 k.66 1+.71 5-57 5.31 5.31 5.38 5.10 5.28 30 1000 15 15 5 -1.98 0.097 0.67 Unit t 31 32 33 3*+ 35 36 37 38 39 1+0 l+l 1+2 1+3 1+1+ 45 k6 kl 1+8 1+9 50 51 52 53 5k 55 56 57 58 59 60 S29 ns 12.11 10.12 IO.78 8.81+ 15.1+6 10.08 11.59 15.32 12.56 12.76 9.80 10.18 15.18 9.95 10.86 IO.98 IO.96 IO.92 12.52 IO.36 10.81 11+.62 18.1+2 15.56 17.06 17.18 11.97 9.73 9-37 13.02 31 1000 15 15 20 -1.96 0.095 0.17 S30 ns 13-31 IO.98 13.51 9.32 13.1+8 12.36 13.20 17.52 13.33 13.92 11.98 12.59 16.77 11.98 13.22 12.88 12.80 13.21+ 13.26 11.69 12.92 16.13 20.75 16.1+8 19.06 18.88 13.02 11.1+2 10.1+1+ 13.78 32 1000 15 15 25 -I.96 0.096 0.13 S31 ns 5-95 5-35 6.1+1 I+.92 6.7O 5. 31+ 5.81 6.1k 5.89 5.1+6 5.1+0 5.72 6.9^ 5-3*+ 6.19 5-95 6.09 5.27 6.1I+ 5-53 5.1+1+ 6.09 6.91 6.10 6.k7 6.90 5. 81+ 5.11 5.31 6.25 S32 ns 1+.91 5.31 1+.61 5.52 I+.93 5.11 5. 21+ 5.22 1+.97 1+.90 5.08 5.51 1+.88 5.29 5.29 5-30 1+.88 5-30 5-03 I+.9I+ 5.19 5-75 5.22 5.1+1 5.1+2 5.22 1+.81+ 1+.99 5.33 TABLE l4l 53 Unit 1 2 3 4 5 6 7 8 9 10 n 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Test: R (ohms) I c (mA) I B1 (mA) 1 B2 M) V CB(SAT) (V) V CE(SAT) (V) WlNG (ns) *S33 ns if. 16 4.13 4.47 4.36 4.oo 4.39 4.52 4.30 4.33 4.04 4.33 4.31 4.03 4.39 4.37 4.30 4.22 4.25 3.78 4.22 4.62 4.06 4.11 4.12 4.52 4.43 4.43 4.34 4.27 4.38 33 1000 15 15 30 -1.96 0.096 0.110 Unit 31 32 33 34 35 36 37 38 39 40 4l 42 43 44 45 46 ^7 48 h9 50 51 52 53 54 55 56 57 58 59 60 S33 ns 4.36 4.06 4.48 3.82 4.56 4.02 4.29 4.35 4.36 4.17 3.82 4.13 4.57 3.89 4.34 4.48 4.43 3.99 4.46 4.30 4.30 4.33 4.63 4.42 4.49 4.63 4.46 4.32 4.00 4.57 APPENDIX! III CALCOMP COMPUTER PROGRAMS PROGRAM I CALL CPB1 VARIATION WITH RASE DRIVE CURRENT ODLMENSION TX(2),TY(2),TAU(6o), BETA(6o), TIMl(l200), 1 DRIV1(1200),TIM2(1200),DRIV2(1200),DRIVM1(6), 2 TLMM1(6),DRIVM2(6) > TIMM2(6),T(60),F(60) READ MEASURED DATA RIT 7,5, (DRIVM1(J),J=1,6) 5 FORMAT (6F10.0) RIT 7, 5, (DRIVM2(L),L=1,6) RIT 7,5, (TLMM1(M),M=1,6) RIT 7, 5, (TLMM2(N),N=1,6) READ TAU AND BETA DO 10 I = 1,60 RIT 7,1,TAU(I),BETA(I) 1 FORMAT (2F10.0) 10 CONTINUE BIAS = 15.0 PULL = 10.0 CALCULATE POINTS FOR FIRST CURVE DO 20 K = 1,1161 XK = K - 1 DRIVl(K) = 1.0 + XK/^0.0 DO 13 N = 1,60 F(N) = (DRIVl(K) + PULL)/ (PULL + BIAS/BETA(N)) 13 T(N) = TAU(N) * elog(f(n)) XT = 0.0 DO 14 N = 1,60 14 XT = XT + T(N) 20 TIML(K) = XT/60.0 PULL = 15.0 CALCULATE POINTS FOR SECOND CURVE DO 30 K = 1, 1161 XK = K - 1 DRIV2(K) = 1.0 + XK/1+0.0 DO 15 N = 1, 60 F(N) = (DRIV2(K) + PULL)/ (PULL + BIAS/BETA(N)) 15 T(N> = TAU(N) * ELOG(F(N)) XT = 0.0 DO 16 N = 1,60 16 XT = XT + T(N) 30 TLM2(K) = XT/60.0 55 J PLOT AXES AND FIND SCALE FACTOR DIMENSION FIELD (2321) DO 100 K = 1,1160 100 FIELD (K) = TLM1(K) DO 200 J = 1,1160 200 FIELD ( J + 1160) = TIM2(J) FIELD(2321) =0.0 CALL CCP^SC (FIELD, 6. 5, 2321, 1, TY) CALL CCPi+SC (DRDVl,8.0,ll60,l,TX) CALL CCP1PL (0.5,0.5,-3) OCALL CCP5AX (0.0,0.0,l8HDRIVE CURRENT (MA),-l8, 1 8. 0,0.0, OX) OCALL CCP5AX (0.0,0.0,17HST0RAGE TIME (NS),17, 1 6.5,90.o,ty) ! PLOT CURVES CALL CCP6LN (DRIVl,TIMl,ll60,l,TX,TY) CALL CCP6LN (DRIV2,TIM2,ll60,l,TX,TY) I PLOT TITLE CALL CCP2SY (l.O, 6.0, 0. 10, 12HBIAS = 15 MA, 0.0, 12) OCALL CCP2SY (l.O, 5. 625,0.10, 30HUPPER CURVE PULL- 1 OUT = 10 MA, 0.0, 30) OCALL CCP2SY (1.0, 5-250,0. 10, 30HL0WER CURVE PULL- 1 OUT = 15 MA, 0.0, 30) ! PLOT MEASURED DATA POINTS DO kO K = 1, 6 X = (DRIVMl(K) - TX(1))/TX(2) Y = (TLMMI(K) - TY(1))/TY(2) 40 CALL CCP2SY (X, Y, 0.08, 0, 0.0, -l) DO 50 L = 1,6 X = (DRIVM2(L) - TX(1))/TX(2) Y =(TLMM2(L) - TY(l))/TY(2) 50 CALL CCP2SY fX,Y,0.08, 2,0.0, -l) CALL CCP1PL (10.0,0.0,-3) ! END OF PLOTTING ROUTINES CALL SYSERR END 56 PROGRAM II CALL CPB1 2 VARIATION WITH BASE PULL-OUT CURRENT ODIMENSION TX(2),TY(2),TAU(60),BETA(6o),TIMl(l200), 1 PULL1 ( 1200 ),TIM2( 1200 ),PULL2( 1200 ),PULLM1 (6), 2 TIMM1(6),PULLM2(6),TIMM2(6),T(60),F(60) 2 READ MEASURED DATA RIT 7,5, (PULLML(j),J=l,6) 5 FORMAT (6F10.0) RIT 7,5, (HJLLM2(L),L=1,6) RIT 7,5, (TIMM1(N),N=1,6) RIT 7,5, (TIMM2(M),M=1,6) : READ TAU AND BETA DO 10 I = 1,60 RIT 7,l,TAU(l),BETA(l) 1 FORMAT (2F10.0) 10 CONTINUE BIAS = 15-0 DRIVE =10.0 : CALCULATE POINTS FOR FIRST CURVE DO 20 K = 1,1161 XK = K - 1 PULLl(K) = 1.0 + XK/^0.0 DO 13 N = 1,60 F(N) = (PULLl(K) + DRIVE )/(PULLl(K) + BIAS/BETA(N) ) 13 T(N) = TAU(N) * elog(f(n)) XT = 0.0 DO lk N = 1,60 Ik XT = XT + T(N) 20 TIMl(K) = XT/60.0 DRIVE =10.0 : CALCULATE POINTS FOR SECOND CURVE DO 30 K = 1,1161 XK = K - 1 PULL2(K) = 1.0 + XK/kO.-O DO 15 N = 1,60 F(N) = (PULL2(K) + DRIVE)/ (PULL2(K) + BIAS/BETA(N)) 15 T(N) = TAU(N) * ELOG(F(N)) XT = 0.0 DO 16 N = 1,60 16 XT = XT + T(N) 30 TIM2(K) = XT/60.0 : PLOT AXES AND FIND SCALE FACTOR DIMENSION FIELD (2321) DO 100 K = l,ll60 100 FIELD (K) = TIMl(K) 57 DO 200 J = 1,1160 200 FIELD ( J + Il60) = TIM2(j) FIELD (2321) =0.0 CALL CCP4SC (FIELD, 6. 5, 2321,1, TY) CALL CCP4SC (PULL1, 8.0, 1160, 1,TX) CALL CCP1PL (0.5,0.5,-3) OCALL CCP5AX (0.0,0.0,21HPULL-0UT CURRENT (MA), 1 -21,8.0,0.0,TX) OCALL CCP5AX (0. 0, 0. 0, 17HST0PAGE TIME (NS),17, 1 6.5,90.0,TY) J PLOT CURVES CALL CCP6LN (PULLL,TIML,ll60,l,TX,TY) CALL CCP6LN (PULL2,TIM2,1160,1,TX,TY) J PLOT TITLE CALL CCP2SY (4.0, 6.0,0. 10, 12HBIAS = 15 MA, 0.0, 12) OCALL CCP2SY (4.0, 5. 625, 0. 10, 27HUPPER CURVE DRIVE 1 =15 MA, 0.0, 27) OCALL CCP2SY (4.0, 5- 250,0. 10, 27HL0WER CURVE DRIVE 1 =10 MA, 0.0, 27) ! PLOT MEASURED DATA POINTS DO 40 K = 1, 6 X = (PULLMl(K) - TX(1))/TX(2) y = (timmi(k) - ty(i))/ty(2) 40 CALL CCP2SY (X, Y, 0.08,0,0.0, -l) DO 50 L = 1,6 X = (PULLM2(L) - TX(1))/TX(2) Y = (TLMM2(L) - TY (1))/TY(2) 50 CALL CCP2SY (X, Y,0. 08, 2, 0.0, -l) CALL CCP1PL (10.0,0.0,-3) ! END OF PLOTTING ROUTINES CALL SYSERR END %